1N4001GHB0G
  • Share:

Taiwan Semiconductor Corporation 1N4001GHB0G

Manufacturer No:
1N4001GHB0G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Bulk
Description:
DIODE GEN PURP 50V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4001GHB0G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation. This diode is designed for a wide range of applications requiring reliable and efficient rectification. It features a maximum DC reverse voltage of 50V and an average rectified current of 1A, making it suitable for various power supply and rectification needs. The diode is packaged in a DO-204AL (DO-41) axial configuration, which is commonly used in through-hole mounting applications. It is also qualified to the AEC-Q101 standard, indicating its suitability for automotive and other demanding environments.

Key Specifications

CategorySpecification
TechnologyStandard
Voltage - DC Reverse (Vr) (Max)50 V
Current - Average Rectified (Io)1 A
Voltage - Forward (Vf) (Max) @ If1 V @ 1 A
SpeedStandard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr5 µA @ 50 V
Capacitance @ Vr, F10 pF @ 4V, 1MHz
QualificationAEC-Q101
Mounting TypeThrough Hole
Operating Temperature - Junction-55°C ~ 150°C
Package/CaseDO-204AL, DO-41, Axial

Key Features

  • High Reliability: Qualified to the AEC-Q101 standard, ensuring reliability in automotive and other demanding applications.
  • High Voltage and Current Handling: Capable of handling up to 50V DC reverse voltage and 1A average rectified current.
  • Standard Recovery Time: Features a standard recovery time greater than 500ns and 200mA (Io).
  • Low Reverse Leakage: Offers a low reverse leakage current of 5 µA at 50V.
  • Wide Operating Temperature Range: Operates within a junction temperature range of -55°C to 150°C.
  • Through-Hole Mounting: Packaged in a DO-204AL (DO-41) axial configuration for easy through-hole mounting.

Applications

The 1N4001GHB0G diode is versatile and can be used in a variety of applications, including:

  • Power Supplies: For rectification and voltage regulation in power supply circuits.
  • Automotive Systems: Given its AEC-Q101 qualification, it is suitable for use in automotive electrical systems.
  • General Electronics: For general-purpose rectification in electronic devices and circuits.
  • Industrial Control Systems: For reliable operation in industrial control and automation systems.

Q & A

  1. What is the maximum DC reverse voltage of the 1N4001GHB0G diode?
    The maximum DC reverse voltage is 50V.
  2. What is the average rectified current of the 1N4001GHB0G diode?
    The average rectified current is 1A.
  3. What is the forward voltage drop of the 1N4001GHB0G diode at 1A?
    The forward voltage drop is 1V at 1A.
  4. What is the recovery time of the 1N4001GHB0G diode?
    The recovery time is greater than 500ns and 200mA (Io).
  5. What is the reverse leakage current of the 1N4001GHB0G diode at 50V?
    The reverse leakage current is 5 µA at 50V.
  6. What is the operating temperature range of the 1N4001GHB0G diode?
    The operating temperature range is -55°C to 150°C.
  7. What is the package type of the 1N4001GHB0G diode?
    The package type is DO-204AL (DO-41) axial.
  8. Is the 1N4001GHB0G diode suitable for automotive applications?
    Yes, it is qualified to the AEC-Q101 standard, making it suitable for automotive applications.
  9. What is the capacitance of the 1N4001GHB0G diode at 4V and 1MHz?
    The capacitance is 10 pF at 4V and 1MHz.
  10. How is the 1N4001GHB0G diode typically mounted?
    The diode is typically mounted through-hole.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):50 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:5 µA @ 50 V
Capacitance @ Vr, F:10pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

-
235

Please send RFQ , we will respond immediately.

Same Series
1N4002G R1G
1N4002G R1G
DIODE GEN PURP 100V 1A DO204AL
1N4004G R1G
1N4004G R1G
DIODE GEN PURP 400V 1A DO204AL
1N4005G R1G
1N4005G R1G
DIODE GEN PURP 600V 1A DO204AL
1N4005GHR1G
1N4005GHR1G
DIODE GEN PURP 600V 1A DO204AL
1N4006G R1G
1N4006G R1G
DIODE GEN PURP 800V 1A DO204AL
1N4006GHR1G
1N4006GHR1G
DIODE GEN PURP 800V 1A DO204AL
1N4002G R0G
1N4002G R0G
DIODE GEN PURP 100V 1A DO204AL
1N4003GHR0G
1N4003GHR0G
DIODE GEN PURP 200V 1A DO204AL
1N4001GHB0G
1N4001GHB0G
DIODE GEN PURP 50V 1A DO204AL
1N4004G B0G
1N4004G B0G
DIODE GEN PURP 400V 1A DO204AL
1N4005GHB0G
1N4005GHB0G
DIODE GEN PURP 600V 1A DO204AL
1N4006GHB0G
1N4006GHB0G
DIODE GEN PURP 800V 1A DO204AL

Similar Products

Part Number 1N4001GHB0G 1N4001GHR0G 1N4002GHB0G 1N4001G B0G 1N4001GHA0G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Discontinued at Digi-Key Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 50 V 50 V 100 V 50 V 50 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - -
Current - Reverse Leakage @ Vr 5 µA @ 50 V 5 µA @ 50 V 5 µA @ 100 V 5 µA @ 50 V 5 µA @ 50 V
Capacitance @ Vr, F 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

1N4148W RHG
1N4148W RHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 150MA SOD123
BAT54TS-AU_R1_000A1
BAT54TS-AU_R1_000A1
Panjit International Inc.
SOD-523, SKY
BAS286-GS08
BAS286-GS08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 200MA SOD80
MBR10100F_T0_00001
MBR10100F_T0_00001
Panjit International Inc.
10 AMPERES SCHOTTKY BARRIER RECT
RB751S40T1G
RB751S40T1G
onsemi
DIODE SCHOTTKY 30V 30MA SOD523
STTH512D
STTH512D
STMicroelectronics
DIODE GEN PURP 1.2KV 5A TO220AC
SBAS20HT1G
SBAS20HT1G
onsemi
DIODE GEN PURP 200V 200MA SOD323
1N4007 BK
1N4007 BK
Central Semiconductor Corp
DIODE GPP 1A 1000V DO41 AXIAL
1N4148,133
1N4148,133
NXP USA Inc.
DIODE GEN PURP 100V 200MA ALF2
BAT54_ND87Z
BAT54_ND87Z
onsemi
DIODE SCHOTTKY 30V 200MA SOT23-3
1N4001GP-M3/54
1N4001GP-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL
1N5821HA0G
1N5821HA0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD

Related Product By Brand

BAT54T REG
BAT54T REG
Taiwan Semiconductor Corporation
DIODE ARRAY SCHOTTKY 30V SOT363
1N4001G R0G
1N4001G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A DO204AL
1N4002G A0G
1N4002G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
1N4004G R1G
1N4004G R1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
MBR10100 C0G
MBR10100 C0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 10A TO220AC
1N5821 B0G
1N5821 B0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD
BAT42 A0
BAT42 A0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
BAT42 R0
BAT42 R0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
MUR420S R6G
MUR420S R6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO214AB
BZV55C2V4 L0G
BZV55C2V4 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 2.4V 500MW MINI MELF
BZV55C5V6 L0G
BZV55C5V6 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 5.6V 500MW MINI MELF
BZV55C11 L1G
BZV55C11 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 11V 500MW MINI MELF