BAT42 A0
  • Share:

Taiwan Semiconductor Corporation BAT42 A0

Manufacturer No:
BAT42 A0
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Box (TB)
Description:
DIODE SCHOTTKY DO-35
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAT42 A0, produced by Taiwan Semiconductor Corporation, is a Schottky barrier diode designed for high-performance applications. This diode is characterized by its low forward voltage drop, fast switching capabilities, and hermetically sealed glass construction. It is suitable for a variety of electronic circuits requiring efficient rectification and switching.

Key Specifications

Parameter Value
Manufacturer Taiwan Semiconductor Corporation
Description Schottky Diode 30V 200mA DO-35
Peak Reverse Voltage (Vr) 30 V
Forward Continuous Current (Io) 200 mA
Max Surge Current 4 A
Forward Voltage Drop (Vf) 0.65 V @ 50 mA
Maximum Reverse Leakage Current 500 nA @ 25 V
Reverse Recovery Time (trr) 5 ns
Junction Capacitance 7 pF @ 1 V, 1 MHz
Operating Temperature Range -65°C to +125°C
Mounting Style Through Hole
Package/Case DO-35
Lead Free Status / RoHS Status Contains lead / RoHS compliant

Key Features

  • Low forward voltage drop, ensuring high efficiency in rectification and switching applications.
  • Fast switching capabilities with a reverse recovery time of 5 ns.
  • Hermetically sealed glass construction, providing robustness and reliability.
  • Compression bonded construction for enhanced durability.
  • All external surfaces are corrosion resistant, and leads are readily solderable.
  • RoHS compliant, making it suitable for modern electronic designs.

Applications

  • General-purpose rectification in power supplies and DC-DC converters.
  • Switching circuits requiring fast recovery times.
  • Audio and video equipment where low noise and high efficiency are crucial.
  • Automotive and industrial control systems.
  • High-frequency applications due to its low junction capacitance.

Q & A

  1. What is the peak reverse voltage of the BAT42 A0 diode?

    The peak reverse voltage of the BAT42 A0 diode is 30 V.

  2. What is the maximum forward continuous current of the BAT42 A0?

    The maximum forward continuous current is 200 mA.

  3. What is the typical forward voltage drop of the BAT42 A0 at 50 mA?

    The typical forward voltage drop at 50 mA is 0.65 V.

  4. What is the reverse recovery time of the BAT42 A0 diode?

    The reverse recovery time is 5 ns.

  5. What is the operating temperature range of the BAT42 A0?

    The operating temperature range is -65°C to +125°C.

  6. Is the BAT42 A0 RoHS compliant?

    Yes, the BAT42 A0 is RoHS compliant.

  7. What type of package does the BAT42 A0 come in?

    The BAT42 A0 comes in a DO-35 package.

  8. What is the maximum surge current the BAT42 A0 can handle?

    The maximum surge current is 4 A.

  9. What is the junction capacitance of the BAT42 A0 at 1 V and 1 MHz?

    The junction capacitance is 7 pF at 1 V and 1 MHz.

  10. Is the BAT42 A0 suitable for high-frequency applications?

    Yes, due to its low junction capacitance, it is suitable for high-frequency applications.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io):200mA
Voltage - Forward (Vf) (Max) @ If:1 V @ 200 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):5 ns
Current - Reverse Leakage @ Vr:500 nA @ 25 V
Capacitance @ Vr, F:7pF @ 1V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AH, DO-35, Axial
Supplier Device Package:DO-35
Operating Temperature - Junction:-65°C ~ 125°C
0 Remaining View Similar

In Stock

-
380

Please send RFQ , we will respond immediately.

Same Series
RD15S10HT0/AA
RD15S10HT0/AA
CONN D-SUB RCPT 15POS CRIMP
DD26M20LV5Z
DD26M20LV5Z
CONN D-SUB HD PLUG 26P SLDR CUP
CBC13W3S10HE2X/AA
CBC13W3S10HE2X/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S20WV5S
DD15S20WV5S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S5000/AA
DD26S2S5000/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200T20/AA
DD26S200T20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD62M32S60V3S/AA
DD62M32S60V3S/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD26S2S50T20/AA
DD26S2S50T20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S600X
DD44S32S600X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WE3X
DD26S20WE3X
CONN D-SUB HD RCPT 26P SLDR CUP
CBC47W1S1S50V5S/AA
CBC47W1S1S50V5S/AA
CONN D-SUB RCPT 47POS CRIMP
DD26S20WE30/AA
DD26S20WE30/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

STPS1150AY
STPS1150AY
STMicroelectronics
DIODE SCHOTTKY 150V 1A SMA
BAS16THVL
BAS16THVL
Nexperia USA Inc.
BAS16TH/SOT23/TO-236AB
1N4001G-T
1N4001G-T
Diodes Incorporated
DIODE GEN PURP 50V 1A DO41
PMEG4020EPASX
PMEG4020EPASX
Nexperia USA Inc.
DIODE SCHOTTKY 40V 2A DFN2020D-3
STPSC4H065D
STPSC4H065D
STMicroelectronics
DIODE SCHOTTKY 650V 4A TO220AC
NSR0340P2T5G
NSR0340P2T5G
onsemi
DIODE SCHOTTKY 40V 200MA SOD923
BAV21W-HE3-18
BAV21W-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 250MA SOD123
MBRM120LT3
MBRM120LT3
onsemi
DIODE SCHOTTKY 1A 20V POWERMITE
MURS120HE3/52T
MURS120HE3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 2A DO214AA
1N4004GP-M3/54
1N4004GP-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO204AL
BAT54-7-F-31
BAT54-7-F-31
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOT23-3
BAS321-QX
BAS321-QX
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP

Related Product By Brand

1.5KE68AH
1.5KE68AH
Taiwan Semiconductor Corporation
TVS DIODE 58.1VWM 92VC DO201
BAT54 RFG
BAT54 RFG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA SOT23
1N4937G A0G
1N4937G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
1N4937GHA0G
1N4937GHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
1N5821HB0G
1N5821HB0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD
BZV55C12 L0G
BZV55C12 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 12V 500MW MINI MELF
BZV55C6V8 L0G
BZV55C6V8 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 6.8V 500MW MINI MELF
BZX84C6V2 RFG
BZX84C6V2 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 6.2V 300MW SOT23
BZV55C4V3 L1G
BZV55C4V3 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 4.3V 500MW MINI MELF
BC846B RFG
BC846B RFG
Taiwan Semiconductor Corporation
TRANS NPN 65V 0.1A SOT23
BC807-16 RFG
BC807-16 RFG
Taiwan Semiconductor Corporation
TRANS PNP 45V 0.5A SOT23
BC857A RFG
BC857A RFG
Taiwan Semiconductor Corporation
TRANS PNP 45V 0.1A SOT23