BAT42 A0
  • Share:

Taiwan Semiconductor Corporation BAT42 A0

Manufacturer No:
BAT42 A0
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Box (TB)
Description:
DIODE SCHOTTKY DO-35
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAT42 A0, produced by Taiwan Semiconductor Corporation, is a Schottky barrier diode designed for high-performance applications. This diode is characterized by its low forward voltage drop, fast switching capabilities, and hermetically sealed glass construction. It is suitable for a variety of electronic circuits requiring efficient rectification and switching.

Key Specifications

Parameter Value
Manufacturer Taiwan Semiconductor Corporation
Description Schottky Diode 30V 200mA DO-35
Peak Reverse Voltage (Vr) 30 V
Forward Continuous Current (Io) 200 mA
Max Surge Current 4 A
Forward Voltage Drop (Vf) 0.65 V @ 50 mA
Maximum Reverse Leakage Current 500 nA @ 25 V
Reverse Recovery Time (trr) 5 ns
Junction Capacitance 7 pF @ 1 V, 1 MHz
Operating Temperature Range -65°C to +125°C
Mounting Style Through Hole
Package/Case DO-35
Lead Free Status / RoHS Status Contains lead / RoHS compliant

Key Features

  • Low forward voltage drop, ensuring high efficiency in rectification and switching applications.
  • Fast switching capabilities with a reverse recovery time of 5 ns.
  • Hermetically sealed glass construction, providing robustness and reliability.
  • Compression bonded construction for enhanced durability.
  • All external surfaces are corrosion resistant, and leads are readily solderable.
  • RoHS compliant, making it suitable for modern electronic designs.

Applications

  • General-purpose rectification in power supplies and DC-DC converters.
  • Switching circuits requiring fast recovery times.
  • Audio and video equipment where low noise and high efficiency are crucial.
  • Automotive and industrial control systems.
  • High-frequency applications due to its low junction capacitance.

Q & A

  1. What is the peak reverse voltage of the BAT42 A0 diode?

    The peak reverse voltage of the BAT42 A0 diode is 30 V.

  2. What is the maximum forward continuous current of the BAT42 A0?

    The maximum forward continuous current is 200 mA.

  3. What is the typical forward voltage drop of the BAT42 A0 at 50 mA?

    The typical forward voltage drop at 50 mA is 0.65 V.

  4. What is the reverse recovery time of the BAT42 A0 diode?

    The reverse recovery time is 5 ns.

  5. What is the operating temperature range of the BAT42 A0?

    The operating temperature range is -65°C to +125°C.

  6. Is the BAT42 A0 RoHS compliant?

    Yes, the BAT42 A0 is RoHS compliant.

  7. What type of package does the BAT42 A0 come in?

    The BAT42 A0 comes in a DO-35 package.

  8. What is the maximum surge current the BAT42 A0 can handle?

    The maximum surge current is 4 A.

  9. What is the junction capacitance of the BAT42 A0 at 1 V and 1 MHz?

    The junction capacitance is 7 pF at 1 V and 1 MHz.

  10. Is the BAT42 A0 suitable for high-frequency applications?

    Yes, due to its low junction capacitance, it is suitable for high-frequency applications.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io):200mA
Voltage - Forward (Vf) (Max) @ If:1 V @ 200 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):5 ns
Current - Reverse Leakage @ Vr:500 nA @ 25 V
Capacitance @ Vr, F:7pF @ 1V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AH, DO-35, Axial
Supplier Device Package:DO-35
Operating Temperature - Junction:-65°C ~ 125°C
0 Remaining View Similar

In Stock

-
380

Please send RFQ , we will respond immediately.

Same Series
DD62M3200T0/AA
DD62M3200T0/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD15S2S5WV50/AA
DD15S2S5WV50/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S10LVLS
DD15S10LVLS
CONN D-SUB HD RCPT 15POS CRIMP
DD15S20Z00
DD15S20Z00
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200E2S/AA
DD15S200E2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WV3S/AA
DD15S20WV3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HE30/AA
CBC13W3S10HE30/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S2S0V50
DD26S2S0V50
CONN D-SUB HD RCPT 26P SLDR CUP
CBC46W4S1000S
CBC46W4S1000S
CONN D-SUB RCPT 46POS CRIMP
DD44S3200T2X
DD44S3200T2X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20W0X
DD26S20W0X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S60V3X
DD44S32S60V3X
CONN D-SUB HD RCPT 44P VERT SLDR

Related Product By Categories

BAS16H,115
BAS16H,115
Nexperia USA Inc.
DIODE GP 100V 215MA SOD123F
PMEG4020EPASX
PMEG4020EPASX
Nexperia USA Inc.
DIODE SCHOTTKY 40V 2A DFN2020D-3
PMEG3020EP,115
PMEG3020EP,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 2A CFP5
BAS521-7
BAS521-7
Diodes Incorporated
DIODE GEN PURP 300V 250MA SOD523
MBR2H100SFT3G
MBR2H100SFT3G
onsemi
DIODE SCHOTTKY 100V 2A SOD123FL
STTH3002G-TR
STTH3002G-TR
STMicroelectronics
DIODE GEN PURP 200V 30A D2PAK
MBRF40250TG
MBRF40250TG
onsemi
DIODE SCHOTTKY 250V 40A TO220FP
BAS21Q-7-F
BAS21Q-7-F
Diodes Incorporated
DIODE GP SW SOT23
MRA4007T3
MRA4007T3
onsemi
DIODE GEN PURP 1KV 1A SMA
BAS16XV2T1
BAS16XV2T1
onsemi
DIODE SWITCH 200MA 75V SOD523
MUR120-E3/73
MUR120-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO204AC
1N4004GPE-M3/54
1N4004GPE-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURPOSE DO-204AL

Related Product By Brand

1N4001G R0G
1N4001G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A DO204AL
MUR160S
MUR160S
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO214AA
BAV21 A0G
BAV21 A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 250V 200MA DO35
MUR160 B0G
MUR160 B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AC
BAS85-L0 L1
BAS85-L0 L1
Taiwan Semiconductor Corporation
DIODE SCHOTTKY MINIMELF
LL4007G L0G
LL4007G L0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1000V 1A MELF
MUR460S R7
MUR460S R7
Taiwan Semiconductor Corporation
DIODE GENERAL PURPOSE DO214AB
BZV55C30 L0G
BZV55C30 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 30V 500MW MINI MELF
BZV55B11 L0G
BZV55B11 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 11V 500MW MINI MELF
BZV55B3V6 L1G
BZV55B3V6 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 3.6V 500MW MINI MELF
MMBT3906L RFG
MMBT3906L RFG
Taiwan Semiconductor Corporation
TRANS PNP 40V 0.2A SOT23
BC846BW RFG
BC846BW RFG
Taiwan Semiconductor Corporation
TRANS NPN 65V 0.1A SOT323