MUR460S R7G
  • Share:

Taiwan Semiconductor Corporation MUR460S R7G

Manufacturer No:
MUR460S R7G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 600V 4A DO214AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUR460S R7G is a high-efficiency, ultrafast recovery rectifier diode produced by Taiwan Semiconductor Corporation. This component is part of the MUR420S through MUR460S series, designed for high-performance applications requiring fast recovery times and high current handling. The MUR460S R7G is AEC-Q101 qualified, making it suitable for automotive and other demanding environments. It features a glass passivated junction, built-in strain relief, and is ideal for automated placement. The device is also compliant with RoHS Directive 2011/65/EU and WEEE 2002/96/EC, ensuring environmental sustainability.

Key Specifications

Parameter Symbol Typical Maximum Unit
Maximum Repetitive Peak Reverse Voltage VRRM - 600 V
Maximum RMS Voltage VR(RMS) - 420 V
Maximum DC Blocking Voltage VDC - 600 V
Maximum Average Forward Rectified Current IF(AV) - 4 A
Peak Forward Surge Current (8.3 ms single half sine-wave) IFSM - 75 A
Forward Voltage @ 4 A, 25°C VF - 0.875 V
Forward Voltage @ 4 A, 150°C VF - 0.710 V
Reverse Current @ Rated VR, TJ=25°C IR - 10 μA
Reverse Recovery Time trr - 50 ns
Junction Capacitance @ 1 MHz, VR=4.0V CJ 65 - pF
Junction-to-Case Thermal Resistance RθJC 8.5 - °C/W
Junction-to-Ambient Thermal Resistance RθJA 45 - °C/W
Operating Junction Temperature Range TJ -55 to +175 - °C
Storage Temperature Range TSTG -55 to +175 - °C

Key Features

  • Ultrafast recovery time of 50 ns for high efficiency.
  • Maximum average forward rectified current of 4 A.
  • Maximum repetitive peak reverse voltage of 600 V.
  • Glass passivated junction for reliability.
  • Built-in strain relief for mechanical stability.
  • Ideal for automated placement.
  • AEC-Q101 qualified for automotive applications.
  • Halogen-free and RoHS compliant.
  • UL flammability classification rating 94V-0.
  • Moisture sensitivity level 1, per J-STD-020.

Applications

  • Automotive systems due to AEC-Q101 qualification.
  • Power supplies and DC-DC converters requiring high efficiency and fast recovery times.
  • Switch-mode power supplies and high-frequency applications.
  • General-purpose rectification in high-current, high-voltage environments.
  • Industrial and consumer electronics where reliability and efficiency are critical.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the MUR460S R7G?

    The maximum repetitive peak reverse voltage is 600 V.

  2. What is the maximum average forward rectified current of the MUR460S R7G?

    The maximum average forward rectified current is 4 A.

  3. What is the ultrafast recovery time of the MUR460S R7G?

    The ultrafast recovery time is 50 ns.

  4. Is the MUR460S R7G AEC-Q101 qualified?

    Yes, the MUR460S R7G is AEC-Q101 qualified, making it suitable for automotive applications.

  5. What is the junction-to-case thermal resistance of the MUR460S R7G?

    The junction-to-case thermal resistance is 8.5 °C/W.

  6. What is the operating junction temperature range of the MUR460S R7G?

    The operating junction temperature range is -55 to +175 °C.

  7. Is the MUR460S R7G RoHS compliant?

    Yes, the MUR460S R7G is RoHS compliant and halogen-free.

  8. What is the moisture sensitivity level of the MUR460S R7G?

    The moisture sensitivity level is 1, per J-STD-020.

  9. What is the UL flammability classification rating of the MUR460S R7G?

    The UL flammability classification rating is 94V-0.

  10. What type of package does the MUR460S R7G come in?

    The MUR460S R7G comes in a DO-214AB (SMC) package.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):4A
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 4 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:10 µA @ 600 V
Capacitance @ Vr, F:65pF @ 4V, 1MHz
Mounting Type:Surface Mount
Package / Case:DO-214AB, SMC
Supplier Device Package:DO-214AB (SMC)
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

-
444

Please send RFQ , we will respond immediately.

Same Series
MUR420S V7G
MUR420S V7G
DIODE GEN PURP 200V 4A DO214AB
MUR440S V7G
MUR440S V7G
DIODE GEN PURP 400V 4A DO214AB
MUR460S V7G
MUR460S V7G
DIODE GEN PURP 600V 4A DO214AB
MUR420S R7G
MUR420S R7G
DIODE GEN PURP 200V 4A DO214AB
MUR440S R7G
MUR440S R7G
DIODE GEN PURP 400V 4A DO214AB
MUR460S R7G
MUR460S R7G
DIODE GEN PURP 600V 4A DO214AB
MUR460SHR7G
MUR460SHR7G
DIODE GEN PURP 600V 4A DO214AB
MUR420S M6G
MUR420S M6G
DIODE GEN PURP 200V 4A DO214AB
MUR440S M6G
MUR440S M6G
DIODE GEN PURP 400V 4A DO214AB
MUR440SHM6G
MUR440SHM6G
DIODE GEN PURP 400V 4A DO214AB
MUR460S M6G
MUR460S M6G
DIODE GEN PURP 600V 4A DO214AB
MUR460SHM6G
MUR460SHM6G
DIODE GEN PURP 600V 4A DO214AB

Similar Products

Part Number MUR460S R7G MUR460S V7G MUR460SHR7G MUR360S R7G MUR420S R7G MUR440S R7G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V 600 V 200 V 400 V
Current - Average Rectified (Io) 4A 4A 4A 3A 4A 4A
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 4 A 1.25 V @ 4 A 1.25 V @ 4 A 1.25 V @ 3 A 875 mV @ 4 A 1.25 V @ 4 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 50 ns 50 ns 50 ns 25 ns 50 ns
Current - Reverse Leakage @ Vr 10 µA @ 600 V 10 µA @ 600 V 10 µA @ 600 V 10 µA @ 600 V 5 µA @ 200 V 10 µA @ 400 V
Capacitance @ Vr, F 65pF @ 4V, 1MHz 65pF @ 4V, 1MHz 65pF @ 4V, 1MHz - 65pF @ 4V, 1MHz 65pF @ 4V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-214AB, SMC DO-214AB, SMC DO-214AB, SMC DO-214AB, SMC DO-214AB, SMC DO-214AB, SMC
Supplier Device Package DO-214AB (SMC) DO-214AB (SMC) DO-214AB (SMC) DO-214AB (SMC) DO-214AB (SMC) DO-214AB (SMC)
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

1SS400T1G
1SS400T1G
onsemi
DIODE GEN PURP 100V 200MA SOD523
BAV102
BAV102
onsemi
DIODE GEN PURP 150V 200MA LL34
STTH30L06G-TR
STTH30L06G-TR
STMicroelectronics
DIODE GEN PURP 600V 30A D2PAK
MURS110T3G
MURS110T3G
onsemi
DIODE GEN PURP 100V 1A SMB
FFSD0665B-F085
FFSD0665B-F085
onsemi
650V 6A SIC SBD GEN1.5
BAT42W-E3-18
BAT42W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
BAV199/ZL215
BAV199/ZL215
Nexperia USA Inc.
BAV199W - RECTIFIER DIODE
PMEG6010CEJ/ZL115
PMEG6010CEJ/ZL115
Nexperia USA Inc.
RECTIFIER DIODE, SCHOTTKY
STPS4S200UFN
STPS4S200UFN
STMicroelectronics
200 V, 4 A SCHOTTKY RECTIFIER
1N5711UR-1E3
1N5711UR-1E3
Microchip Technology
SCHOTTKY BARRIER DIODE MELF SURF
MURS140-13
MURS140-13
Diodes Incorporated
DIODE GEN PURP 400V 1A SMB
BAT54-7-G
BAT54-7-G
Diodes Incorporated
DIODE SCHOTTKY SOT23

Related Product By Brand

1.5KE6.8AHA0G
1.5KE6.8AHA0G
Taiwan Semiconductor Corporation
TVS DIODE 5.8VWM 10.5VC DO201
1.5KE120AHB0G
1.5KE120AHB0G
Taiwan Semiconductor Corporation
TVS DIODE 102VWM 165VC DO201
BAT54BR-G REG
BAT54BR-G REG
Taiwan Semiconductor Corporation
DIODE ARRAY SCHOTTKY 30V SOT363
BAV99W RVG
BAV99W RVG
Taiwan Semiconductor Corporation
DIODE ARRAY GP 85V 150MA SOT323
BAT42WS RRG
BAT42WS RRG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA SOD323F
BAV21W-G RHG
BAV21W-G RHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 200MA SOD123
1N4002GHA0G
1N4002GHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
BZV55C22 L0G
BZV55C22 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 22V 500MW MINI MELF
BZV55C5V6 L0G
BZV55C5V6 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 5.6V 500MW MINI MELF
BZX585B13 RSG
BZX585B13 RSG
Taiwan Semiconductor Corporation
DIODE ZENER 13V 200MW SOD523F
BZV55C5V1 L1G
BZV55C5V1 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 5.1V 500MW MINI MELF
BC847A RFG
BC847A RFG
Taiwan Semiconductor Corporation
TRANS NPN 45V 0.1A SOT23