MUR460S R7G
  • Share:

Taiwan Semiconductor Corporation MUR460S R7G

Manufacturer No:
MUR460S R7G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 600V 4A DO214AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUR460S R7G is a high-efficiency, ultrafast recovery rectifier diode produced by Taiwan Semiconductor Corporation. This component is part of the MUR420S through MUR460S series, designed for high-performance applications requiring fast recovery times and high current handling. The MUR460S R7G is AEC-Q101 qualified, making it suitable for automotive and other demanding environments. It features a glass passivated junction, built-in strain relief, and is ideal for automated placement. The device is also compliant with RoHS Directive 2011/65/EU and WEEE 2002/96/EC, ensuring environmental sustainability.

Key Specifications

Parameter Symbol Typical Maximum Unit
Maximum Repetitive Peak Reverse Voltage VRRM - 600 V
Maximum RMS Voltage VR(RMS) - 420 V
Maximum DC Blocking Voltage VDC - 600 V
Maximum Average Forward Rectified Current IF(AV) - 4 A
Peak Forward Surge Current (8.3 ms single half sine-wave) IFSM - 75 A
Forward Voltage @ 4 A, 25°C VF - 0.875 V
Forward Voltage @ 4 A, 150°C VF - 0.710 V
Reverse Current @ Rated VR, TJ=25°C IR - 10 μA
Reverse Recovery Time trr - 50 ns
Junction Capacitance @ 1 MHz, VR=4.0V CJ 65 - pF
Junction-to-Case Thermal Resistance RθJC 8.5 - °C/W
Junction-to-Ambient Thermal Resistance RθJA 45 - °C/W
Operating Junction Temperature Range TJ -55 to +175 - °C
Storage Temperature Range TSTG -55 to +175 - °C

Key Features

  • Ultrafast recovery time of 50 ns for high efficiency.
  • Maximum average forward rectified current of 4 A.
  • Maximum repetitive peak reverse voltage of 600 V.
  • Glass passivated junction for reliability.
  • Built-in strain relief for mechanical stability.
  • Ideal for automated placement.
  • AEC-Q101 qualified for automotive applications.
  • Halogen-free and RoHS compliant.
  • UL flammability classification rating 94V-0.
  • Moisture sensitivity level 1, per J-STD-020.

Applications

  • Automotive systems due to AEC-Q101 qualification.
  • Power supplies and DC-DC converters requiring high efficiency and fast recovery times.
  • Switch-mode power supplies and high-frequency applications.
  • General-purpose rectification in high-current, high-voltage environments.
  • Industrial and consumer electronics where reliability and efficiency are critical.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the MUR460S R7G?

    The maximum repetitive peak reverse voltage is 600 V.

  2. What is the maximum average forward rectified current of the MUR460S R7G?

    The maximum average forward rectified current is 4 A.

  3. What is the ultrafast recovery time of the MUR460S R7G?

    The ultrafast recovery time is 50 ns.

  4. Is the MUR460S R7G AEC-Q101 qualified?

    Yes, the MUR460S R7G is AEC-Q101 qualified, making it suitable for automotive applications.

  5. What is the junction-to-case thermal resistance of the MUR460S R7G?

    The junction-to-case thermal resistance is 8.5 °C/W.

  6. What is the operating junction temperature range of the MUR460S R7G?

    The operating junction temperature range is -55 to +175 °C.

  7. Is the MUR460S R7G RoHS compliant?

    Yes, the MUR460S R7G is RoHS compliant and halogen-free.

  8. What is the moisture sensitivity level of the MUR460S R7G?

    The moisture sensitivity level is 1, per J-STD-020.

  9. What is the UL flammability classification rating of the MUR460S R7G?

    The UL flammability classification rating is 94V-0.

  10. What type of package does the MUR460S R7G come in?

    The MUR460S R7G comes in a DO-214AB (SMC) package.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):4A
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 4 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:10 µA @ 600 V
Capacitance @ Vr, F:65pF @ 4V, 1MHz
Mounting Type:Surface Mount
Package / Case:DO-214AB, SMC
Supplier Device Package:DO-214AB (SMC)
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

-
444

Please send RFQ , we will respond immediately.

Same Series
MUR420S V7G
MUR420S V7G
DIODE GEN PURP 200V 4A DO214AB
MUR440S V7G
MUR440S V7G
DIODE GEN PURP 400V 4A DO214AB
MUR460S V7G
MUR460S V7G
DIODE GEN PURP 600V 4A DO214AB
MUR420S R7G
MUR420S R7G
DIODE GEN PURP 200V 4A DO214AB
MUR460S R7G
MUR460S R7G
DIODE GEN PURP 600V 4A DO214AB
MUR460SHR7G
MUR460SHR7G
DIODE GEN PURP 600V 4A DO214AB
MUR420SHM6G
MUR420SHM6G
DIODE GEN PURP 200V 4A DO214AB
MUR440S M6G
MUR440S M6G
DIODE GEN PURP 400V 4A DO214AB
MUR440SHM6G
MUR440SHM6G
DIODE GEN PURP 400V 4A DO214AB
MUR460S M6G
MUR460S M6G
DIODE GEN PURP 600V 4A DO214AB
MUR460SHM6G
MUR460SHM6G
DIODE GEN PURP 600V 4A DO214AB
MUR440SHR7G
MUR440SHR7G
DIODE GEN PURP 400V 4A DO214AB

Similar Products

Part Number MUR460S R7G MUR460S V7G MUR460SHR7G MUR360S R7G MUR420S R7G MUR440S R7G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V 600 V 200 V 400 V
Current - Average Rectified (Io) 4A 4A 4A 3A 4A 4A
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 4 A 1.25 V @ 4 A 1.25 V @ 4 A 1.25 V @ 3 A 875 mV @ 4 A 1.25 V @ 4 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 50 ns 50 ns 50 ns 25 ns 50 ns
Current - Reverse Leakage @ Vr 10 µA @ 600 V 10 µA @ 600 V 10 µA @ 600 V 10 µA @ 600 V 5 µA @ 200 V 10 µA @ 400 V
Capacitance @ Vr, F 65pF @ 4V, 1MHz 65pF @ 4V, 1MHz 65pF @ 4V, 1MHz - 65pF @ 4V, 1MHz 65pF @ 4V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-214AB, SMC DO-214AB, SMC DO-214AB, SMC DO-214AB, SMC DO-214AB, SMC DO-214AB, SMC
Supplier Device Package DO-214AB (SMC) DO-214AB (SMC) DO-214AB (SMC) DO-214AB (SMC) DO-214AB (SMC) DO-214AB (SMC)
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

1N4148UR-1
1N4148UR-1
Microchip Technology
DIODE GEN PURP 75V 200MA DO213AA
BAV21WS-AQ
BAV21WS-AQ
Diotec Semiconductor
DIODE SOD-323 250V 0.2A 50NS
PMEG2015EPK,315
PMEG2015EPK,315
NXP USA Inc.
NOW NEXPERIA PMEG2015EPK - RECTI
BAS16WS-HE3-18
BAS16WS-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD323
1N4148WQ-13-F
1N4148WQ-13-F
Diodes Incorporated
SWITCHING DIODE SOD123 T&R 10K
MUR460-T
MUR460-T
Diodes Incorporated
FRED GPP RECTIFIER DO-201AD T&R
PMEG4010ER-QX
PMEG4010ER-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
BAS16-F2-0000HF
BAS16-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 75V 200MA SOT23
MRA4007T3
MRA4007T3
onsemi
DIODE GEN PURP 1KV 1A SMA
1N4001GP-M3/54
1N4001GP-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL
1N4937G R1G
1N4937G R1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
BAT54-7-F-31
BAT54-7-F-31
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOT23-3

Related Product By Brand

BAS21A RFG
BAS21A RFG
Taiwan Semiconductor Corporation
DIODE ARRAY GP 250V 200MA SOT23
BAT54CD REG
BAT54CD REG
Taiwan Semiconductor Corporation
DIODE ARRAY SCHOTTKY 30V SOT363
BAT42WS RRG
BAT42WS RRG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA SOD323F
MUR160HB0G
MUR160HB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AC
BZV55C30 L0G
BZV55C30 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 30V 500MW MINI MELF
BZV55B15 L0G
BZV55B15 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 15V 500MW MINI MELF
BZX84C3V9 RFG
BZX84C3V9 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 3.9V 300MW SOT23
BZV55B3V9 L1G
BZV55B3V9 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 3.9V 500MW MINI MELF
BZV55C16 L1G
BZV55C16 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 16V 500MW MINI MELF
BZX585B3V0 RKG
BZX585B3V0 RKG
Taiwan Semiconductor Corporation
DIODE ZENER 3V 200MW SOD523F
BC857A RFG
BC857A RFG
Taiwan Semiconductor Corporation
TRANS PNP 45V 0.1A SOT23
BC850CW RFG
BC850CW RFG
Taiwan Semiconductor Corporation
TRANS NPN 45V 0.1A SOT323