MUR460S R7G
  • Share:

Taiwan Semiconductor Corporation MUR460S R7G

Manufacturer No:
MUR460S R7G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 600V 4A DO214AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUR460S R7G is a high-efficiency, ultrafast recovery rectifier diode produced by Taiwan Semiconductor Corporation. This component is part of the MUR420S through MUR460S series, designed for high-performance applications requiring fast recovery times and high current handling. The MUR460S R7G is AEC-Q101 qualified, making it suitable for automotive and other demanding environments. It features a glass passivated junction, built-in strain relief, and is ideal for automated placement. The device is also compliant with RoHS Directive 2011/65/EU and WEEE 2002/96/EC, ensuring environmental sustainability.

Key Specifications

Parameter Symbol Typical Maximum Unit
Maximum Repetitive Peak Reverse Voltage VRRM - 600 V
Maximum RMS Voltage VR(RMS) - 420 V
Maximum DC Blocking Voltage VDC - 600 V
Maximum Average Forward Rectified Current IF(AV) - 4 A
Peak Forward Surge Current (8.3 ms single half sine-wave) IFSM - 75 A
Forward Voltage @ 4 A, 25°C VF - 0.875 V
Forward Voltage @ 4 A, 150°C VF - 0.710 V
Reverse Current @ Rated VR, TJ=25°C IR - 10 μA
Reverse Recovery Time trr - 50 ns
Junction Capacitance @ 1 MHz, VR=4.0V CJ 65 - pF
Junction-to-Case Thermal Resistance RθJC 8.5 - °C/W
Junction-to-Ambient Thermal Resistance RθJA 45 - °C/W
Operating Junction Temperature Range TJ -55 to +175 - °C
Storage Temperature Range TSTG -55 to +175 - °C

Key Features

  • Ultrafast recovery time of 50 ns for high efficiency.
  • Maximum average forward rectified current of 4 A.
  • Maximum repetitive peak reverse voltage of 600 V.
  • Glass passivated junction for reliability.
  • Built-in strain relief for mechanical stability.
  • Ideal for automated placement.
  • AEC-Q101 qualified for automotive applications.
  • Halogen-free and RoHS compliant.
  • UL flammability classification rating 94V-0.
  • Moisture sensitivity level 1, per J-STD-020.

Applications

  • Automotive systems due to AEC-Q101 qualification.
  • Power supplies and DC-DC converters requiring high efficiency and fast recovery times.
  • Switch-mode power supplies and high-frequency applications.
  • General-purpose rectification in high-current, high-voltage environments.
  • Industrial and consumer electronics where reliability and efficiency are critical.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the MUR460S R7G?

    The maximum repetitive peak reverse voltage is 600 V.

  2. What is the maximum average forward rectified current of the MUR460S R7G?

    The maximum average forward rectified current is 4 A.

  3. What is the ultrafast recovery time of the MUR460S R7G?

    The ultrafast recovery time is 50 ns.

  4. Is the MUR460S R7G AEC-Q101 qualified?

    Yes, the MUR460S R7G is AEC-Q101 qualified, making it suitable for automotive applications.

  5. What is the junction-to-case thermal resistance of the MUR460S R7G?

    The junction-to-case thermal resistance is 8.5 °C/W.

  6. What is the operating junction temperature range of the MUR460S R7G?

    The operating junction temperature range is -55 to +175 °C.

  7. Is the MUR460S R7G RoHS compliant?

    Yes, the MUR460S R7G is RoHS compliant and halogen-free.

  8. What is the moisture sensitivity level of the MUR460S R7G?

    The moisture sensitivity level is 1, per J-STD-020.

  9. What is the UL flammability classification rating of the MUR460S R7G?

    The UL flammability classification rating is 94V-0.

  10. What type of package does the MUR460S R7G come in?

    The MUR460S R7G comes in a DO-214AB (SMC) package.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):4A
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 4 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:10 µA @ 600 V
Capacitance @ Vr, F:65pF @ 4V, 1MHz
Mounting Type:Surface Mount
Package / Case:DO-214AB, SMC
Supplier Device Package:DO-214AB (SMC)
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

-
444

Please send RFQ , we will respond immediately.

Same Series
MUR420S V7G
MUR420S V7G
DIODE GEN PURP 200V 4A DO214AB
MUR440S V7G
MUR440S V7G
DIODE GEN PURP 400V 4A DO214AB
MUR460S V7G
MUR460S V7G
DIODE GEN PURP 600V 4A DO214AB
MUR440S R7G
MUR440S R7G
DIODE GEN PURP 400V 4A DO214AB
MUR460S R7G
MUR460S R7G
DIODE GEN PURP 600V 4A DO214AB
MUR460SHR7G
MUR460SHR7G
DIODE GEN PURP 600V 4A DO214AB
MUR420S M6G
MUR420S M6G
DIODE GEN PURP 200V 4A DO214AB
MUR420SHM6G
MUR420SHM6G
DIODE GEN PURP 200V 4A DO214AB
MUR440S M6G
MUR440S M6G
DIODE GEN PURP 400V 4A DO214AB
MUR440SHM6G
MUR440SHM6G
DIODE GEN PURP 400V 4A DO214AB
MUR460SHM6G
MUR460SHM6G
DIODE GEN PURP 600V 4A DO214AB
MUR440SHR7G
MUR440SHR7G
DIODE GEN PURP 400V 4A DO214AB

Similar Products

Part Number MUR460S R7G MUR460S V7G MUR460SHR7G MUR360S R7G MUR420S R7G MUR440S R7G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V 600 V 200 V 400 V
Current - Average Rectified (Io) 4A 4A 4A 3A 4A 4A
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 4 A 1.25 V @ 4 A 1.25 V @ 4 A 1.25 V @ 3 A 875 mV @ 4 A 1.25 V @ 4 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 50 ns 50 ns 50 ns 25 ns 50 ns
Current - Reverse Leakage @ Vr 10 µA @ 600 V 10 µA @ 600 V 10 µA @ 600 V 10 µA @ 600 V 5 µA @ 200 V 10 µA @ 400 V
Capacitance @ Vr, F 65pF @ 4V, 1MHz 65pF @ 4V, 1MHz 65pF @ 4V, 1MHz - 65pF @ 4V, 1MHz 65pF @ 4V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-214AB, SMC DO-214AB, SMC DO-214AB, SMC DO-214AB, SMC DO-214AB, SMC DO-214AB, SMC
Supplier Device Package DO-214AB (SMC) DO-214AB (SMC) DO-214AB (SMC) DO-214AB (SMC) DO-214AB (SMC) DO-214AB (SMC)
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

PMEG3050EP,115
PMEG3050EP,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 5A SOD128
1N4007-E3/53
1N4007-E3/53
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AL
FSV10100V
FSV10100V
onsemi
DIODE SCHOTTKY 100V 10A TO277-3
STPS5L60SFY
STPS5L60SFY
STMicroelectronics
AUTOMOTIVE GRADE 60V LOWVF POWER
BAT54WSQ-7-F
BAT54WSQ-7-F
Diodes Incorporated
DIODE SCHOTTKY 30V 100MA SOD323
STTH15RQ06DY
STTH15RQ06DY
STMicroelectronics
DIODE GEN PURP 600V 15A TO220AC
BAT54W-E3-18
BAT54W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
NRVUS1MFA
NRVUS1MFA
onsemi
DIODE GEN PURP 1A1000V SOD123-2
PMEG4002EL315
PMEG4002EL315
Nexperia USA Inc.
NOW NEXPERIA PMEG4002EL RECTIFIE
BAS21_D87Z
BAS21_D87Z
onsemi
DIODE GEN PURP 250V 200MA SOT23
STPS2150RL
STPS2150RL
STMicroelectronics
DIODE SCHOTTKY 150V 2A DO15
BYV29B-600,118
BYV29B-600,118
WeEn Semiconductors
DIODE GEN PURP 600V 9A D2PAK

Related Product By Brand

1.5KE6.8A R0G
1.5KE6.8A R0G
Taiwan Semiconductor Corporation
TVS DIODE 5.8VWM 10.5VC DO201
1.5KE6.8AHR0G
1.5KE6.8AHR0G
Taiwan Semiconductor Corporation
TVS DIODE 5.8VWM 10.5VC DO201
1.5KE68A B0G
1.5KE68A B0G
Taiwan Semiconductor Corporation
TVS DIODE 58.1VWM 92VC DO201
BAS40-06 RFG
BAS40-06 RFG
Taiwan Semiconductor Corporation
DIODE ARRAY SCHOTTKY 40V SOT23
1N4004GH
1N4004GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
BAT54W RVG
BAT54W RVG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA SOT-323
MUR420S R6
MUR420S R6
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO214AB
BZV55B27 L0G
BZV55B27 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 27V 500MW MINI MELF
BZX84C2V7 RFG
BZX84C2V7 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 2.7V 300MW SOT23
BZV55B27 L1G
BZV55B27 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 27V 500MW MINI MELF
BZV55B7V5 L1G
BZV55B7V5 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 7.5V 500MW MINI MELF
BZX55C4V7 A0G
BZX55C4V7 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 4.7V 500MW DO35