BAS85-L0 L1
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Taiwan Semiconductor Corporation BAS85-L0 L1

Manufacturer No:
BAS85-L0 L1
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY MINIMELF
Delivery:
Payment:
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iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS85-L0 L1 is a Schottky barrier diode produced by Taiwan Semiconductor Corporation. This diode is designed for high-efficiency and fast switching applications, making it ideal for use in various electronic circuits. It features a low forward voltage drop and is hermetically sealed in a mini MELF package, which is suitable for surface mount technology.

Key Specifications

ParameterValueUnit
ManufacturerTaiwan Semiconductor
Voltage - Forward (Vf) (Max) @ If800 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max)30 V
TechnologySchottky
Package / CaseDO-213AC, MINI-MELF, SOD-80
Mounting TypeSurface Mount
Operating Temperature - Junction125°C (Max)
Current - Average Rectified (Io)200 mA
Current - Reverse Leakage @ Vr2 µA @ 25 V
Reverse Recovery Time (trr)5 ns
Capacitance @ Vr, F10 pF @ 1 V, 1 MHz
Power Dissipation200 mW
RoHs StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)

Key Features

  • Low forward voltage drop of 800 mV at 100 mA, making it efficient for power applications.
  • Hermetically sealed in a mini MELF package, suitable for surface mount technology.
  • Fast switching with a reverse recovery time of 5 ns.
  • High junction temperature rating of up to 125°C.
  • Compliant with RoHS directive 2011/65/EU and halogen-free according to IEC 61249-2-21.
  • Ideal for automated placement due to its small size and lead configuration.

Applications

  • Switching power supplies: The low forward voltage drop and fast switching capabilities make it suitable for high-efficiency power supply designs.
  • Adapters: Used in various adapter applications where low power loss and high reliability are required.
  • Inverters: The diode's fast recovery time and low stored charge make it ideal for inverter circuits.
  • General rectification: Suitable for general rectification purposes in electronic circuits.

Q & A

  1. What is the maximum forward voltage drop of the BAS85-L0 L1 diode?
    The maximum forward voltage drop is 800 mV at 100 mA.
  2. What is the maximum DC reverse voltage rating of the BAS85-L0 L1?
    The maximum DC reverse voltage rating is 30 V.
  3. What is the package type of the BAS85-L0 L1 diode?
    The diode is packaged in a DO-213AC, MINI-MELF, SOD-80 package.
  4. What is the operating junction temperature range of the BAS85-L0 L1?
    The operating junction temperature range is up to 125°C.
  5. What is the average forward rectified current (Io) of the BAS85-L0 L1?
    The average forward rectified current (Io) is 200 mA.
  6. What is the reverse recovery time (trr) of the BAS85-L0 L1?
    The reverse recovery time (trr) is 5 ns.
  7. Is the BAS85-L0 L1 RoHS compliant?
    Yes, the BAS85-L0 L1 is ROHS3 compliant.
  8. What is the moisture sensitivity level (MSL) of the BAS85-L0 L1?
    The moisture sensitivity level (MSL) is 1 (Unlimited).
  9. What are some common applications of the BAS85-L0 L1 diode?
    Common applications include switching power supplies, adapters, inverters, and general rectification.
  10. What is the power dissipation rating of the BAS85-L0 L1?
    The power dissipation rating is 200 mW.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io):200mA
Voltage - Forward (Vf) (Max) @ If:800 mV @ 100 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):5 ns
Current - Reverse Leakage @ Vr:2 µA @ 25 V
Capacitance @ Vr, F:10pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:DO-213AC, MINI-MELF, SOD-80
Supplier Device Package:Mini MELF
Operating Temperature - Junction:125°C (Max)
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