BC850CW RFG
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Taiwan Semiconductor Corporation BC850CW RFG

Manufacturer No:
BC850CW RFG
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.1A SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC850CW RFG is an NPN general-purpose transistor manufactured by Taiwan Semiconductor Corporation. It is designed for low-voltage and low-current applications, making it suitable for a variety of electronic devices. The transistor is packaged in a SOT-323 (SC-70) package, which is compact and ideal for space-constrained designs. It is AEC-Q101 qualified, ensuring its reliability and performance in automotive and other demanding environments.

Key Specifications

ParameterValueUnit
Collector-Base Breakdown Voltage (VCBO)50V
Collector-Emitter Breakdown Voltage (V(BR)CEO)45V
Emitter-Base Breakdown Voltage (VEBO)5V
DC Current Gain (hFE)420 - 800-
Transition Frequency (fT)100MHz
Collector-Emitter Saturation Voltage (VCE(sat))0.25 - 0.60V
Maximum Collector Current (IC)100mA
Maximum Power Dissipation (Ptot)200mW
Junction Temperature Range (TJ)-55 to +150°C
Storage Temperature Range (TSTG)-55 to +150°C

Key Features

  • Low voltage (max. 45 V) and low current (max. 100 mA) capabilities.
  • AEC-Q101 qualified, ensuring reliability in automotive and other demanding environments.
  • Compact SOT-323 (SC-70) package, ideal for space-constrained designs.
  • High DC current gain (hFE) ranging from 420 to 800.
  • Transition frequency (fT) of 100 MHz.
  • Low noise figure, making it suitable for audio-frequency applications.

Applications

The BC850CW RFG transistor is widely used in various applications, including:

  • Low noise stages in tape recorders and hi-fi amplifiers.
  • Audio-frequency equipment due to its low noise figure.
  • Automotive systems, thanks to its AEC-Q101 qualification.
  • General-purpose switching and amplification in electronic circuits.

Q & A

  1. What is the maximum collector-emitter voltage of the BC850CW RFG transistor?
    The maximum collector-emitter voltage (V(BR)CEO) is 45 V.
  2. What is the DC current gain range of the BC850CW RFG transistor?
    The DC current gain (hFE) ranges from 420 to 800.
  3. What is the transition frequency of the BC850CW RFG transistor?
    The transition frequency (fT) is 100 MHz.
  4. What is the maximum collector current of the BC850CW RFG transistor?
    The maximum collector current (IC) is 100 mA.
  5. Is the BC850CW RFG transistor AEC-Q101 qualified?
    Yes, it is AEC-Q101 qualified, making it suitable for automotive and other demanding environments.
  6. What is the package type of the BC850CW RFG transistor?
    The transistor is packaged in a SOT-323 (SC-70) package.
  7. What are the typical applications of the BC850CW RFG transistor?
    It is used in low noise stages in tape recorders, hi-fi amplifiers, and other audio-frequency equipment.
  8. What is the junction temperature range of the BC850CW RFG transistor?
    The junction temperature range (TJ) is -55 to +150 °C.
  9. What is the storage temperature range of the BC850CW RFG transistor?
    The storage temperature range (TSTG) is -55 to +150 °C.
  10. What is the maximum power dissipation of the BC850CW RFG transistor?
    The maximum power dissipation (Ptot) is 200 mW.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
Power - Max:200 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SOT-323
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Similar Products

Part Number BC850CW RFG BC850AW RFG BC850BW RFG
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active Active
Transistor Type NPN NPN NPN
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V 110 @ 2mA, 5V 200 @ 2mA, 5V
Power - Max 200 mW 200 mW 200 mW
Frequency - Transition 100MHz 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323
Supplier Device Package SOT-323 SOT-323 SOT-323

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