BC847CW RFG
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Taiwan Semiconductor Corporation BC847CW RFG

Manufacturer No:
BC847CW RFG
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.1A SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC847CW RFG is a general-purpose NPN bipolar transistor produced by Taiwan Semiconductor Corporation. It is designed for use in a wide range of applications requiring small signal amplification and switching. This transistor is packaged in a SOT-323 (SC-70) surface-mounted device (SMD) plastic package, making it suitable for compact and efficient electronic designs.

Key Specifications

Parameter Value Unit
Collector-Emitter Breakdown Voltage (VCEO) 45 V
Emitter-Base Breakdown Voltage (VEB0) 6 V
Collector Cut-off Current (ICBO) 15 nA
Emitter Cut-off Current (IEBO) 100 nA
DC Current Gain (hFE) 420 - 800
Collector-Emitter Saturation Voltage (VCE(sat)) 0.25 V (IC = 10mA, IB = 0.5mA) V
Transition Frequency (fT) 100 MHz MHz
Base-Emitter Voltage (VBE) 0.58 - 0.70 V V
Collector Output Capacitance (Cob) 4.50 pF pF
Maximum Junction Temperature (TJ) 150 °C
Power Dissipation (Ptot) 200 mW mW
Package Type SOT-323 (SC-70)

Key Features

  • Compact Package: The BC847CW RFG is packaged in a small SOT-323 (SC-70) SMD plastic package, making it ideal for space-constrained designs.
  • High Current Gain: The transistor offers a high DC current gain (hFE) ranging from 420 to 800, ensuring reliable amplification.
  • Low Saturation Voltage: It features a low collector-emitter saturation voltage (VCE(sat)) of 0.25 V, which is beneficial for reducing power consumption.
  • High Transition Frequency: With a transition frequency (fT) of 100 MHz, this transistor is suitable for high-frequency applications.
  • RoHS Compliant: The BC847CW RFG is RoHS compliant, ensuring it meets environmental standards for lead-free electronics.

Applications

The BC847CW RFG is versatile and can be used in a variety of applications, including:

  • General-Purpose Amplification: Suitable for small signal amplification in audio, video, and other electronic circuits.
  • Switching Circuits: Can be used in switching applications due to its low saturation voltage and high current gain.
  • Automotive Electronics: Although not specifically automotive qualified, it can be used in various automotive electronic systems where general-purpose transistors are required.
  • Consumer Electronics: Found in mobile, computing, and consumer electronics for amplification and switching purposes.
  • Industrial Electronics: Used in industrial control systems, sensors, and other industrial electronic devices.

Q & A

  1. What is the collector-emitter breakdown voltage of the BC847CW RFG?

    The collector-emitter breakdown voltage (VCEO) is 45 V.

  2. What is the package type of the BC847CW RFG?

    The BC847CW RFG is packaged in a SOT-323 (SC-70) surface-mounted device (SMD) plastic package.

  3. What is the DC current gain range of the BC847CW RFG?

    The DC current gain (hFE) ranges from 420 to 800.

  4. What is the transition frequency of the BC847CW RFG?

    The transition frequency (fT) is 100 MHz.

  5. Is the BC847CW RFG RoHS compliant?

    Yes, the BC847CW RFG is RoHS compliant.

  6. What is the maximum junction temperature of the BC847CW RFG?

    The maximum junction temperature (TJ) is 150°C.

  7. What is the power dissipation of the BC847CW RFG?

    The power dissipation (Ptot) is 200 mW.

  8. What are some common applications of the BC847CW RFG?

    It is commonly used in general-purpose amplification, switching circuits, automotive electronics, consumer electronics, and industrial electronics.

  9. What is the emitter-base breakdown voltage of the BC847CW RFG?

    The emitter-base breakdown voltage (VEB0) is 6 V).

  10. What is the collector-emitter saturation voltage of the BC847CW RFG?

    The collector-emitter saturation voltage (VCE(sat)) is 0.25 V (IC = 10mA, IB = 0.5mA)).

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
Power - Max:200 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SOT-323
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Similar Products

Part Number BC847CW RFG BC847BW RFG BC847C RFG
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active Active
Transistor Type NPN NPN NPN
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V 200 @ 2mA, 5V 420 @ 2mA, 5V
Power - Max 200 mW 200 mW 200 mW
Frequency - Transition 100MHz 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-323 SOT-323 SOT-23

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