1N4004GHB0G
  • Share:

Taiwan Semiconductor Corporation 1N4004GHB0G

Manufacturer No:
1N4004GHB0G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Bulk
Description:
DIODE GEN PURP 400V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4004GHB0G is a rectifier diode produced by Taiwan Semiconductor Corporation. This component is part of the 1N400x series, known for its high current capability and low forward voltage drop. It is designed to meet various power system requirements, particularly in applications where reliability and efficiency are crucial.

Key Specifications

CharacteristicSymbol1N4004GUnit
Peak Repetitive Reverse VoltageVRRM400V
Working Peak Reverse VoltageVRWM400V
DC Blocking VoltageVR400V
RMS Reverse VoltageVR(RMS)280V
Average Rectified Output Current @ TA = 75°CIO1.0A
Non-Repetitive Peak Forward Surge Current (8.3ms single half sine-wave)IFSM30A
Forward Voltage @ IF = 1.0AVFM1.0V
Peak Reverse Current @ TA = 25°C at Rated DC Blocking Voltage @ TA = 125°CIRM5.0 µAµA
Typical Reverse Recovery Timetrr2.0 µsµs
Typical Total CapacitanceCT8.0 pFpF
Operating and Storage Temperature RangeTJ, TSTG-65 to +175 °C°C

Key Features

  • High Current Capability: The 1N4004GHB0G can handle an average rectified output current of 1.0 A, making it suitable for high-current applications.
  • Low Forward Voltage Drop: It features a low forward voltage drop of 1.0 V at 1.0 A, which enhances efficiency in power systems.
  • Surge Overload Rating: The diode has a non-repetitive peak forward surge current rating of 30 A, providing robust protection against transient surges.
  • Lead Free Finish and RoHS Compliance: The component is lead-free and RoHS compliant, ensuring environmental sustainability and regulatory compliance.
  • High Reliability: With a glass passivated die construction, it offers high reliability and stability in various operating conditions.

Applications

The 1N4004GHB0G is versatile and can be used in a variety of applications, including:

  • Power Supplies: Suitable for use in rectifier circuits in power supplies due to its high current handling and low forward voltage drop.
  • Automotive Systems: Can be used in automotive power systems where high reliability and robust surge protection are essential.
  • Industrial Power Systems: Applicable in industrial power systems requiring high current rectification and efficient operation.
  • Consumer Electronics: Used in consumer electronics for power rectification and surge protection.

Q & A

  1. What is the peak repetitive reverse voltage of the 1N4004GHB0G?
    The peak repetitive reverse voltage is 400 V.
  2. What is the average rectified output current of the 1N4004GHB0G at 75°C?
    The average rectified output current is 1.0 A.
  3. What is the non-repetitive peak forward surge current rating of the 1N4004GHB0G?
    The non-repetitive peak forward surge current rating is 30 A.
  4. Is the 1N4004GHB0G RoHS compliant?
    Yes, the component is lead-free and RoHS compliant.
  5. What is the typical reverse recovery time of the 1N4004GHB0G?
    The typical reverse recovery time is 2.0 µs.
  6. What is the operating temperature range of the 1N4004GHB0G?
    The operating and storage temperature range is -65 to +175 °C.
  7. What type of construction does the 1N4004GHB0G have?
    The 1N4004GHB0G has a glass passivated die construction.
  8. Can the 1N4004GHB0G be used in automotive systems?
    Yes, it can be used in automotive power systems due to its high reliability and robust surge protection.
  9. What is the forward voltage drop of the 1N4004GHB0G at 1.0 A?
    The forward voltage drop is 1.0 V at 1.0 A.
  10. Is the 1N4004GHB0G suitable for high-current applications?
    Yes, it is suitable for high-current applications due to its high current capability.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):400 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:5 µA @ 400 V
Capacitance @ Vr, F:10pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

-
82

Please send RFQ , we will respond immediately.

Same Series
1N4002G A0G
1N4002G A0G
DIODE GEN PURP 100V 1A DO204AL
1N4003G R1G
1N4003G R1G
DIODE GEN PURP 200V 1A DO204AL
1N4003GHR1G
1N4003GHR1G
DIODE GEN PURP 200V 1A DO204AL
1N4002G R0G
1N4002G R0G
DIODE GEN PURP 100V 1A DO204AL
1N4002GHR0G
1N4002GHR0G
DIODE GEN PURP 100V 1A DO204AL
1N4001GHA0G
1N4001GHA0G
DIODE GEN PURP 50V 1A DO204AL
1N4002GHA0G
1N4002GHA0G
DIODE GEN PURP 100V 1A DO204AL
1N4003GHA0G
1N4003GHA0G
DIODE GEN PURP 200V 1A DO204AL
1N4004G A0G
1N4004G A0G
DIODE GEN PURP 400V 1A DO204AL
1N4001G B0G
1N4001G B0G
DIODE GEN PURP 50V 1A DO204AL
1N4004G B0G
1N4004G B0G
DIODE GEN PURP 400V 1A DO204AL
1N4005G B0G
1N4005G B0G
DIODE GEN PURP 600V 1A DO204AL

Similar Products

Part Number 1N4004GHB0G 1N4005GHB0G 1N4003GHB0G 1N4004G B0G 1N4004GHA0G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 400 V 600 V 200 V 400 V 400 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - -
Current - Reverse Leakage @ Vr 5 µA @ 400 V 5 µA @ 600 V 5 µA @ 200 V 5 µA @ 400 V 5 µA @ 400 V
Capacitance @ Vr, F 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

MUR860J
MUR860J
WeEn Semiconductors
ULTRAFAST POWER DIODE
STPS2H100ZFY
STPS2H100ZFY
STMicroelectronics
DIODE SCHOTTKY 100V 2A SOD123F
MUR840G
MUR840G
onsemi
DIODE GEN PURP 400V 8A TO220AC
RB751CS40,315
RB751CS40,315
Nexperia USA Inc.
DIODE SCHOTTKY 40V 120MA SOD882
BAS21E6433HTMA1
BAS21E6433HTMA1
Infineon Technologies
DIODE GEN PURP 200V 250MA SOT23
1N4004GH
1N4004GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
NSVBAS16W1T1G
NSVBAS16W1T1G
onsemi
SS SC88 SWITCHING DIODE
STPS2H100AFN
STPS2H100AFN
STMicroelectronics
100 V, 2 A POWER SCHOTTKY RECTIF
PMEG4010ER-QX
PMEG4010ER-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
NRVBS260NT3G
NRVBS260NT3G
onsemi
DIODE SCHOTTKY 2A 60V 1202 SMB2
MURD330T4G
MURD330T4G
onsemi
DIODE GEN PURP 300V 3A DPAK
BAT43 A0G
BAT43 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA DO35

Related Product By Brand

1.5KE68AH
1.5KE68AH
Taiwan Semiconductor Corporation
TVS DIODE 58.1VWM 92VC DO201
BAS85 L1G
BAS85 L1G
Taiwan Semiconductor Corporation
DIODE SCHTKY 30V 200MA MINI MELF
1N4004GHR1G
1N4004GHR1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
BAT43 R0
BAT43 R0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
LL4007G L0G
LL4007G L0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1000V 1A MELF
BZX84C3V0 RFG
BZX84C3V0 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 3V 300MW SOT23
BZV55B27 L0G
BZV55B27 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 27V 500MW MINI MELF
BZV55B7V5 L0G
BZV55B7V5 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 7.5V 500MW MINI MELF
BZX84C36 RFG
BZX84C36 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 36V 300MW SOT23
BZV55B22 L1G
BZV55B22 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 22V 500MW MINI MELF
BZV55B3V3 L1G
BZV55B3V3 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 3.3V 500MW MINI MELF
BZX55C8V2 A0G
BZX55C8V2 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 8.2V 500MW DO35