1N4004GHB0G
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Taiwan Semiconductor Corporation 1N4004GHB0G

Manufacturer No:
1N4004GHB0G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Bulk
Description:
DIODE GEN PURP 400V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4004GHB0G is a rectifier diode produced by Taiwan Semiconductor Corporation. This component is part of the 1N400x series, known for its high current capability and low forward voltage drop. It is designed to meet various power system requirements, particularly in applications where reliability and efficiency are crucial.

Key Specifications

CharacteristicSymbol1N4004GUnit
Peak Repetitive Reverse VoltageVRRM400V
Working Peak Reverse VoltageVRWM400V
DC Blocking VoltageVR400V
RMS Reverse VoltageVR(RMS)280V
Average Rectified Output Current @ TA = 75°CIO1.0A
Non-Repetitive Peak Forward Surge Current (8.3ms single half sine-wave)IFSM30A
Forward Voltage @ IF = 1.0AVFM1.0V
Peak Reverse Current @ TA = 25°C at Rated DC Blocking Voltage @ TA = 125°CIRM5.0 µAµA
Typical Reverse Recovery Timetrr2.0 µsµs
Typical Total CapacitanceCT8.0 pFpF
Operating and Storage Temperature RangeTJ, TSTG-65 to +175 °C°C

Key Features

  • High Current Capability: The 1N4004GHB0G can handle an average rectified output current of 1.0 A, making it suitable for high-current applications.
  • Low Forward Voltage Drop: It features a low forward voltage drop of 1.0 V at 1.0 A, which enhances efficiency in power systems.
  • Surge Overload Rating: The diode has a non-repetitive peak forward surge current rating of 30 A, providing robust protection against transient surges.
  • Lead Free Finish and RoHS Compliance: The component is lead-free and RoHS compliant, ensuring environmental sustainability and regulatory compliance.
  • High Reliability: With a glass passivated die construction, it offers high reliability and stability in various operating conditions.

Applications

The 1N4004GHB0G is versatile and can be used in a variety of applications, including:

  • Power Supplies: Suitable for use in rectifier circuits in power supplies due to its high current handling and low forward voltage drop.
  • Automotive Systems: Can be used in automotive power systems where high reliability and robust surge protection are essential.
  • Industrial Power Systems: Applicable in industrial power systems requiring high current rectification and efficient operation.
  • Consumer Electronics: Used in consumer electronics for power rectification and surge protection.

Q & A

  1. What is the peak repetitive reverse voltage of the 1N4004GHB0G?
    The peak repetitive reverse voltage is 400 V.
  2. What is the average rectified output current of the 1N4004GHB0G at 75°C?
    The average rectified output current is 1.0 A.
  3. What is the non-repetitive peak forward surge current rating of the 1N4004GHB0G?
    The non-repetitive peak forward surge current rating is 30 A.
  4. Is the 1N4004GHB0G RoHS compliant?
    Yes, the component is lead-free and RoHS compliant.
  5. What is the typical reverse recovery time of the 1N4004GHB0G?
    The typical reverse recovery time is 2.0 µs.
  6. What is the operating temperature range of the 1N4004GHB0G?
    The operating and storage temperature range is -65 to +175 °C.
  7. What type of construction does the 1N4004GHB0G have?
    The 1N4004GHB0G has a glass passivated die construction.
  8. Can the 1N4004GHB0G be used in automotive systems?
    Yes, it can be used in automotive power systems due to its high reliability and robust surge protection.
  9. What is the forward voltage drop of the 1N4004GHB0G at 1.0 A?
    The forward voltage drop is 1.0 V at 1.0 A.
  10. Is the 1N4004GHB0G suitable for high-current applications?
    Yes, it is suitable for high-current applications due to its high current capability.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):400 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:5 µA @ 400 V
Capacitance @ Vr, F:10pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-55°C ~ 150°C
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Similar Products

Part Number 1N4004GHB0G 1N4005GHB0G 1N4003GHB0G 1N4004G B0G 1N4004GHA0G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 400 V 600 V 200 V 400 V 400 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - -
Current - Reverse Leakage @ Vr 5 µA @ 400 V 5 µA @ 600 V 5 µA @ 200 V 5 µA @ 400 V 5 µA @ 400 V
Capacitance @ Vr, F 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

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