BAS521-7
  • Share:

Diodes Incorporated BAS521-7

Manufacturer No:
BAS521-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 300V 250MA SOD523
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS521-7 is a high-voltage switching diode produced by Diodes Incorporated. This diode is fabricated using planar technology and is encapsulated in a SOD523 (SC-79) ultra-small Surface-Mounted Device (SMD) plastic package. It is designed for high-speed switching applications and offers several key advantages, including fast switching speeds and high reverse breakdown voltage.

Key Specifications

ParameterValue
Maximum Reverse Voltage (VRRM)300V
Maximum Forward Current (IF)1A
Maximum Reverse Leakage Current (IR)100nA at room temperature
Switching Time (trr)50 ns (maximum)
Package TypeSOD523 (SC-79)

Key Features

  • Fast Switching Speed: The BAS521-7 has a maximum switching time of 50 ns, making it suitable for high-speed applications.
  • High Reverse Breakdown Voltage: With a maximum reverse voltage of 300V, this diode provides robust protection against reverse voltage spikes.
  • Low Leakage Current: It features a low reverse leakage current of 100nA at room temperature, reducing power consumption and improving overall efficiency.
  • Ultra-Small Package: Encapsulated in a SOD523 (SC-79) package, this diode is ideal for space-constrained designs.

Applications

The BAS521-7 is suitable for a variety of applications that require high-speed switching and robust voltage handling. These include:

  • High-frequency switching circuits
  • Power supply circuits
  • Audio and video equipment
  • Automotive and industrial control systems

Q & A

  1. What is the maximum reverse voltage of the BAS521-7?
    The maximum reverse voltage (VRRM) of the BAS521-7 is 300V.
  2. What is the switching time of the BAS521-7?
    The switching time (trr) of the BAS521-7 is a maximum of 50 ns.
  3. What is the package type of the BAS521-7?
    The BAS521-7 is encapsulated in a SOD523 (SC-79) ultra-small Surface-Mounted Device (SMD) plastic package.
  4. What is the maximum forward current of the BAS521-7?
    The maximum forward current (IF) of the BAS521-7 is 1A.
  5. What is the typical reverse leakage current of the BAS521-7 at room temperature?
    The typical reverse leakage current (IR) of the BAS521-7 at room temperature is 100nA.
  6. What are some common applications of the BAS521-7?
    The BAS521-7 is commonly used in high-frequency switching circuits, power supply circuits, audio and video equipment, and automotive and industrial control systems.
  7. Who is the manufacturer of the BAS521-7?
    The BAS521-7 is produced by Diodes Incorporated.
  8. What technology is used to fabricate the BAS521-7?
    The BAS521-7 is fabricated using planar technology.
  9. Is the BAS521-7 suitable for high-speed applications?
    Yes, the BAS521-7 is designed for high-speed switching applications due to its fast switching speed.
  10. Where can I find detailed specifications for the BAS521-7?
    Detailed specifications for the BAS521-7 can be found in the datasheet available on the Diodes Incorporated website or through distributors like Digi-Key, Mouser, and Nexperia.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):300 V
Current - Average Rectified (Io):250mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 100 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:150 nA @ 250 V
Capacitance @ Vr, F:5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SC-79, SOD-523
Supplier Device Package:SOD-523
Operating Temperature - Junction:-65°C ~ 150°C
0 Remaining View Similar

In Stock

$0.40
1,782

Please send RFQ , we will respond immediately.

Related Product By Categories

PMEG2010ER,115
PMEG2010ER,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A CFP3
MURS120T3G
MURS120T3G
onsemi
DIODE GEN PURP 200V 1A SMB
SBAT54XV2T1G
SBAT54XV2T1G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
STPS5L60SFY
STPS5L60SFY
STMicroelectronics
AUTOMOTIVE GRADE 60V LOWVF POWER
BAT54W-E3-18
BAT54W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
PMEG3002ESF315
PMEG3002ESF315
Nexperia USA Inc.
RECTIFIER DIODE, SCHOTTKY
NRVUS1MFA
NRVUS1MFA
onsemi
DIODE GEN PURP 1A1000V SOD123-2
1N5711UR-1E3
1N5711UR-1E3
Microchip Technology
SCHOTTKY BARRIER DIODE MELF SURF
PMEG4002EL315
PMEG4002EL315
Nexperia USA Inc.
NOW NEXPERIA PMEG4002EL RECTIFIE
BAS216,135
BAS216,135
NXP USA Inc.
DIODE GEN PURP 75V 250MA SOD2
1N4148TR_S00Z
1N4148TR_S00Z
onsemi
DIODE GEN PURP 100V 200MA DO35
MUR420S R6
MUR420S R6
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO214AB

Related Product By Brand

BAV23CQ-7-F
BAV23CQ-7-F
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100
MBR10100CDTR-G1
MBR10100CDTR-G1
Diodes Incorporated
DIODE ARRAY SCHOTTKY 100V TO252
MURS320-13-F
MURS320-13-F
Diodes Incorporated
DIODE GEN PURP 200V 3A SMC
BZX84C3V3S-7-F
BZX84C3V3S-7-F
Diodes Incorporated
DIODE ZENER ARRAY 3.3V SOT363
BZT52HC6V8WF-7
BZT52HC6V8WF-7
Diodes Incorporated
DIODE ZENER 6.8V 375MW SOD123F
BZX84C12Q-13-F
BZX84C12Q-13-F
Diodes Incorporated
ZENER DIODE SOT23 T&R 10K
BZX84B11-7-F
BZX84B11-7-F
Diodes Incorporated
DIODE ZENER 11V 350MW SOT23
BZX84C18-7
BZX84C18-7
Diodes Incorporated
DIODE ZENER 18V 300MW SOT23
BZX84C39-7
BZX84C39-7
Diodes Incorporated
DIODE ZENER 39V 300MW SOT23-3
BC847BVNQ-7
BC847BVNQ-7
Diodes Incorporated
GENERAL PURPOSE TRANSISTOR SOT56
BCP56TA
BCP56TA
Diodes Incorporated
TRANS NPN 80V 1A SOT223-3
2N7002T-13-G
2N7002T-13-G
Diodes Incorporated
MOSFET N-CH 60V SOT523