BSS138WQ-7-F
  • Share:

Diodes Incorporated BSS138WQ-7-F

Manufacturer No:
BSS138WQ-7-F
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
BSS FAMILY SOT323 T&R 3K
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS138W-7-F is a dual N-Channel enhancement mode MOSFET produced by Diodes Incorporated. This component is designed for high-efficiency power management applications, offering low on-state resistance, low gate threshold voltage, and fast switching speeds. It is packaged in a SOT-323 (SC-70) surface mount package, making it suitable for a variety of electronic circuits requiring compact and efficient switching solutions.

Key Specifications

FET TypeNo of ChannelsDrain-to-Source Voltage [Vdss]Drain-Source On Resistance-MaxRated Power DissipationGate-Source Voltage-Max [Vgss]Drain CurrentTurn-on Delay TimeTurn-off Delay TimeOperating Temp RangeGate Source ThresholdInput CapacitancePackage StyleMounting Method
N-Ch150V3.5Ω200mW±20V200mA20ns20ns-55°C to +150°C1.2V50pFSOT-323 (SC-70)Surface Mount

Key Features

  • Low On-Resistance: The BSS138W-7-F features a maximum drain-source on-resistance of 3.5Ω at VGS = 10V, ensuring high efficiency in power management applications.
  • Low Gate Threshold Voltage: With a gate-source threshold voltage of 1.2V, this MOSFET is easy to drive and suitable for low-voltage systems.
  • Low Input Capacitance: The input capacitance is 50pF, contributing to fast switching speeds.
  • Fast Switching Speed: Turn-on and turn-off delay times are both 20ns, making it ideal for high-frequency applications.
  • Totally Lead-Free & Fully RoHS Compliant: The device is lead-free and compliant with RoHS directives, ensuring environmental sustainability.
  • Halogen- and Antimony-Free: This 'green' device is free from halogen and antimony, further enhancing its environmental credentials.

Applications

The BSS138W-7-F is designed for various high-efficiency power management applications, including but not limited to:

  • Load Switching: Its low on-resistance and fast switching speeds make it ideal for load switching in power management circuits.
  • Power Amplification: It can be used in circuits that require both amplification and switching of signals.
  • Automotive Applications: Although the BSS138W-7-F itself is not automotive-compliant, a variant (BSS138WQ) is available for automotive use, requiring specific change control and manufactured in IATF 16949 certified facilities.

Q & A

  1. What is the maximum drain-to-source voltage of the BSS138W-7-F?
    The maximum drain-to-source voltage is 50V.
  2. What is the maximum drain current of the BSS138W-7-F?
    The maximum drain current is 200mA.
  3. What is the package style of the BSS138W-7-F?
    The package style is SOT-323 (SC-70).
  4. What is the mounting method of the BSS138W-7-F?
    The mounting method is surface mount.
  5. What are the operating temperature ranges of the BSS138W-7-F?
    The operating temperature range is -55°C to +150°C.
  6. Is the BSS138W-7-F RoHS compliant?
    Yes, the BSS138W-7-F is totally lead-free and fully RoHS compliant.
  7. What are the turn-on and turn-off delay times of the BSS138W-7-F?
    Both the turn-on and turn-off delay times are 20ns.
  8. What is the gate-source threshold voltage of the BSS138W-7-F?
    The gate-source threshold voltage is 1.2V.
  9. Is the BSS138W-7-F suitable for automotive applications?
    No, the BSS138W-7-F itself is not automotive-compliant, but a variant (BSS138WQ) is available for such applications.
  10. What is the maximum power dissipation of the BSS138W-7-F?
    The maximum power dissipation is 200mW.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):50 V
Current - Continuous Drain (Id) @ 25°C:280mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:48 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):400mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-323
Package / Case:SC-70, SOT-323
0 Remaining View Similar

In Stock

$0.05
18,309

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV50
DD15S2S5WV50
CONN D-SUB HD RCPT 15P SLDR CUP
DD62M3200V50/AA
DD62M3200V50/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD15S20LVL0
DD15S20LVL0
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20Z0X
DD15S20Z0X
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20W0S
DD15S20W0S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20HE2Z/AA
DD26M20HE2Z/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S2S000
DD26S2S000
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20JVLS/AA
DD15S20JVLS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S0V30
DD26S2S0V30
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V3X/AA
DD26S2S50V3X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S3200TX
DD44S3200TX
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20W00
DD26S20W00
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

2N7002 TR PBFREE
2N7002 TR PBFREE
Central Semiconductor Corp
MOSFET N-CH 60V 115MA SOT23
STD3N62K3
STD3N62K3
STMicroelectronics
MOSFET N-CH 620V 2.7A DPAK
BUK7240-100A,118
BUK7240-100A,118
Nexperia USA Inc.
MOSFET N-CH 100V 34A DPAK
STP24NM60N
STP24NM60N
STMicroelectronics
MOSFET N-CH 600V 17A TO220
BUK762R6-60E,118
BUK762R6-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 120A D2PAK
NDUL03N150CG
NDUL03N150CG
onsemi
MOSFET N-CH 1500V 2.5A TO3P
NTD3055L170T4
NTD3055L170T4
onsemi
MOSFET N-CH 60V 9A DPAK
NTD20N06LT4
NTD20N06LT4
onsemi
MOSFET N-CH 60V 20A DPAK
STF13NM60N-H
STF13NM60N-H
STMicroelectronics
MOSFET N-CH 600V 11A TO220FP
BUK9222-55A,118
BUK9222-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 48A DPAK
MCH3375-TL-W-Z
MCH3375-TL-W-Z
onsemi
MOSFET P-CH 30V 1.6A SC-70FL
FDB075N15A_SN00284
FDB075N15A_SN00284
onsemi
MOSFET N-CH 150V 130A D2PAK

Related Product By Brand

BAS40W-06-7-F
BAS40W-06-7-F
Diodes Incorporated
DIODE ARRAY SCHOTTKY 40V SOT323
BAW56-7-F-31
BAW56-7-F-31
Diodes Incorporated
DIODE ARRAY GP SOT23
1N4148-T
1N4148-T
Diodes Incorporated
DIODE GEN PURP 75V 150MA DO35
BZX84C3V6S-7-F
BZX84C3V6S-7-F
Diodes Incorporated
DIODE ZENER ARRAY 3.6V SOT363
BZX84C39S-7
BZX84C39S-7
Diodes Incorporated
DIODE ZENER ARRAY 39V SOT363
BZX84C6V2TS-7-F
BZX84C6V2TS-7-F
Diodes Incorporated
DIODE ZENER ARRAY 6.2V SOT363
BZX84C3V9Q-13-F
BZX84C3V9Q-13-F
Diodes Incorporated
ZENER DIODE SOT23 T&R 10K
BZX84C27-7-F-79
BZX84C27-7-F-79
Diodes Incorporated
DIODE ZENER
BC847BVNQ-7
BC847BVNQ-7
Diodes Incorporated
GENERAL PURPOSE TRANSISTOR SOT56
BC847BVC-7-F
BC847BVC-7-F
Diodes Incorporated
IC TRANSISTOR ARRAY SOT563
BSS138W-7
BSS138W-7
Diodes Incorporated
MOSFET N-CH 50V 0.2A SOT323
ULN2002AS16-13
ULN2002AS16-13
Diodes Incorporated
IC PWR RELAY 7NPN 1:1 16SO