BC847CW-7-F
  • Share:

Diodes Incorporated BC847CW-7-F

Manufacturer No:
BC847CW-7-F
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.1A SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC847CW-7-F is a general-purpose NPN bipolar junction transistor (BJT) manufactured by Diodes Incorporated. This transistor is designed for a wide range of applications, including amplifiers, switches, logic gates, and drivers. It is packaged in a compact SOT-323 (SC-70) surface-mount device (SMD) plastic package, making it suitable for high-density electronic designs. The BC847CW-7-F is known for its high power and voltage ratings, low saturation voltage, and high current gain, which make it an excellent choice for various electronic circuits.

Key Specifications

Parameter Value
Transistor Type NPN
Package SOT-323 (SC-70)
Operating Temperature (TJ) -65°C to 150°C
Power Rating 200 mW
Collector-Emitter Breakdown Voltage (VCEO) 45 V
Collector Current (IC max) 100 mA
Collector Cutoff Current (ICBO max) 20 nA
Collector-Emitter Saturation Voltage (VCE(sat)) 600 mV @ 5 mA, 100 mA
DC Current Gain (hFE min) 420 @ 2 mA, 5 V
Transition Frequency (fT min) 300 MHz

Key Features

  • Compact Package: The BC847CW-7-F is packaged in a small SOT-323 (SC-70) surface-mount device, making it ideal for high-density electronic designs.
  • High Power and Voltage Ratings: With a collector-emitter breakdown voltage of 45 V and a collector current of up to 100 mA, this transistor is suitable for a variety of applications.
  • Low Saturation Voltage: The transistor has a low collector-emitter saturation voltage, which ensures efficient operation and minimizes power loss.
  • High Current Gain: The DC current gain of at least 420 provides strong amplification capabilities.
  • High-Frequency Performance: The transition frequency of 300 MHz makes this transistor suitable for high-frequency applications.
  • RoHS3 Compliance: The BC847CW-7-F is RoHS3 compliant, ensuring environmental friendliness and compliance with regulatory standards.
  • High-Temperature Capability: The transistor can operate in high-temperature environments, with a junction temperature range of -65°C to 150°C.

Applications

  • Amplifiers: The BC847CW-7-F can be used in various amplifier circuits due to its high current gain and low saturation voltage.
  • Switches: Its high power and voltage ratings make it suitable for switching applications.
  • Logic Gates: The transistor can be used in logic gate circuits due to its high-frequency performance and low saturation voltage.
  • Drivers: It is often used as a driver in electronic circuits, leveraging its high current gain and high-frequency capabilities.
  • General-Purpose Electronic Circuits: The BC847CW-7-F is versatile and can be used in a wide range of general-purpose electronic circuits.

Q & A

  1. What is the package type of the BC847CW-7-F transistor?

    The BC847CW-7-F is packaged in a SOT-323 (SC-70) surface-mount device (SMD) plastic package.

  2. What are the operating temperature ranges for the BC847CW-7-F?

    The operating temperature range for the BC847CW-7-F is -65°C to 150°C (TJ).

  3. What is the maximum collector current for the BC847CW-7-F?

    The maximum collector current for the BC847CW-7-F is 100 mA.

  4. What is the collector-emitter breakdown voltage of the BC847CW-7-F?

    The collector-emitter breakdown voltage of the BC847CW-7-F is 45 V.

  5. Is the BC847CW-7-F RoHS3 compliant?

    Yes, the BC847CW-7-F is RoHS3 compliant.

  6. What is the transition frequency of the BC847CW-7-F?

    The transition frequency of the BC847CW-7-F is 300 MHz.

  7. What are some common applications for the BC847CW-7-F?

    The BC847CW-7-F is commonly used in amplifiers, switches, logic gates, drivers, and general-purpose electronic circuits.

  8. What is the DC current gain of the BC847CW-7-F?

    The DC current gain of the BC847CW-7-F is at least 420 at 2 mA and 5 V.

  9. Is the BC847CW-7-F suitable for high-temperature applications?

    Yes, the BC847CW-7-F is suitable for high-temperature applications, with a junction temperature range of -65°C to 150°C.

  10. What is the power rating of the BC847CW-7-F?

    The power rating of the BC847CW-7-F is 200 mW.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
Power - Max:200 mW
Frequency - Transition:300MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SOT-323
0 Remaining View Similar

In Stock

$0.20
3,876

Please send RFQ , we will respond immediately.

Same Series
BC847BW-7-F
BC847BW-7-F
TRANS NPN 45V 0.1A SOT323
BC846BW-7-F
BC846BW-7-F
TRANS NPN 65V 0.1A SOT323
BC847CW-7-F
BC847CW-7-F
TRANS NPN 45V 0.1A SOT323
BC847AW-7-F
BC847AW-7-F
TRANS NPN 45V 0.1A SOT323
BC848AW-7-F
BC848AW-7-F
TRANS NPN 30V 0.1A SOT323
BC848BW-7-F
BC848BW-7-F
TRANS NPN 30V 0.1A SOT323
BC848CW-7-F
BC848CW-7-F
TRANS NPN 30V 0.1A SOT323

Similar Products

Part Number BC847CW-7-F BC847BW-7-F BC847C-7-F BC847CQ-7-F BC847CT-7-F
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active Active Active
Transistor Type NPN NPN NPN NPN NPN
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 20nA (ICBO) 20nA (ICBO) 15nA 15nA 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V 200 @ 2mA, 5V 420 @ 2mA, 5V 420 @ 2mA, 5V 420 @ 2mA, 5V
Power - Max 200 mW 200 mW 300 mW 310 mW 150 mW
Frequency - Transition 300MHz 300MHz 300MHz 300MHz 100MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 SOT-523
Supplier Device Package SOT-323 SOT-323 SOT-23-3 SOT-23-3 SOT-523

Related Product By Categories

BC858B,215
BC858B,215
Nexperia USA Inc.
TRANS PNP 30V 0.1A TO236AB
BCV26
BCV26
onsemi
TRANS PNP DARL 30V 1.2A SOT23-3
PZT2907AT1G
PZT2907AT1G
onsemi
TRANS PNP 60V 0.6A SOT223
BCP56-10
BCP56-10
Diotec Semiconductor
TRANS NPN 80V 1A SOT223
BC817-16W,135
BC817-16W,135
NXP USA Inc.
NOW NEXPERIA BC817-16W - SMALL S
MMBT5550LT1G
MMBT5550LT1G
onsemi
TRANS NPN 140V 0.6A SOT23-3
BD680
BD680
STMicroelectronics
TRANS PNP DARL 80V 4A SOT32-3
BC846B/DG/B4215
BC846B/DG/B4215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BCX52-16TF
BCX52-16TF
Nexperia USA Inc.
TRANS PNP 60V 1A SOT89
MMBT3904TT1
MMBT3904TT1
onsemi
TRANS NPN 40V 200MA SOT416
BCX56-10R1
BCX56-10R1
onsemi
TRANS NPN 80V 1A SOT89-3
BCX 56-10 E6327
BCX 56-10 E6327
Infineon Technologies
TRANS NPN 80V 1A SOT89

Related Product By Brand

BAW567DW-7-F
BAW567DW-7-F
Diodes Incorporated
DIODE ARRAY GP 75V 150MA SOT363
BAV70DW-7
BAV70DW-7
Diodes Incorporated
DIODE ARRAY GP 75V 150MA SOT363
BAS21-7
BAS21-7
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOT23
BZX84C13S-7-F
BZX84C13S-7-F
Diodes Incorporated
DIODE ZENER ARRAY 13V SOT363
BZX84C39-7-F-79
BZX84C39-7-F-79
Diodes Incorporated
DIODE ZENER
BZX84C39-7-G
BZX84C39-7-G
Diodes Incorporated
DIODE ZENER
BC846A-7-F
BC846A-7-F
Diodes Incorporated
TRANS NPN 65V 0.1A SOT23-3
2N7002V-7
2N7002V-7
Diodes Incorporated
MOSFET 2N-CH 60V 0.28A SOT-563
BSS84W-7-F
BSS84W-7-F
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT323
2N7002TA
2N7002TA
Diodes Incorporated
MOSFET N-CH 60V 115MA SOT23-3
SA555S-13
SA555S-13
Diodes Incorporated
IC OSC SINGLE TIMER 500KHZ 8SO
74LVC1G07FS3-7
74LVC1G07FS3-7
Diodes Incorporated
IC BUFFER NON-INVERT 5.5V 4DFN