BC847CQ-7-F
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Diodes Incorporated BC847CQ-7-F

Manufacturer No:
BC847CQ-7-F
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
GENERAL PURPOSE TRANSISTOR SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC847CQ-7-F is a general-purpose NPN bipolar junction transistor (BJT) manufactured by Diodes Incorporated. This transistor is designed for a wide range of applications, including general-purpose amplifiers and switching circuits. It is packaged in a SOT-23-3 surface mount format, making it suitable for compact and efficient electronic designs.

Key Specifications

Characteristic Symbol Value Unit
Collector-Base Voltage VCBO 50 V
Collector-Emitter Voltage VCEO 45 V
Emitter-Base Voltage VEBO 6 V
Continuous Collector Current IC 100 mA
Peak Collector Current ICM 200 mA
Power Dissipation PD 310 mW
Gain Bandwidth Product fT 300 MHz
DC Current Gain (hFE) hFE 420 - 800
Collector-Emitter Saturation Voltage VCE(sat) 0.25 V
Operating Temperature Range TJ -65 to +150 °C

Key Features

  • General Purpose NPN BJT: Suitable for a wide range of applications including amplifiers and switching circuits.
  • High Current Gain: DC current gain (hFE) ranges from 420 to 800, ensuring reliable amplification.
  • High Frequency Capability: Gain bandwidth product of 300 MHz, making it suitable for high-frequency applications.
  • Compact Packaging: SOT-23-3 surface mount package for efficient use of space in modern electronic designs.
  • AEC-Q101 Qualified: Suitable for automotive applications due to its compliance with AEC-Q101 standards.
  • Low Saturation Voltage: Collector-Emitter saturation voltage of 0.25V, reducing power consumption in switching applications.

Applications

  • General Purpose Amplifiers: Suitable for use in various amplifier circuits due to its high current gain and low noise figure.
  • Switching Circuits: Ideal for switching applications such as power management and control circuits.
  • Automotive Electronics: AEC-Q101 qualified, making it suitable for use in automotive systems.
  • Consumer Electronics: Can be used in a variety of consumer electronic devices requiring reliable and efficient transistor performance.

Q & A

  1. What is the package type of the BC847CQ-7-F transistor?

    The BC847CQ-7-F is packaged in a SOT-23-3 surface mount format.

  2. What is the maximum collector-emitter voltage (VCEO) of the BC847CQ-7-F?

    The maximum collector-emitter voltage (VCEO) is 45V.

  3. What is the continuous collector current (IC) rating of the BC847CQ-7-F?

    The continuous collector current (IC) rating is 100mA.

  4. What is the gain bandwidth product (fT) of the BC847CQ-7-F?

    The gain bandwidth product (fT) is 300 MHz.

  5. Is the BC847CQ-7-F suitable for automotive applications?

    Yes, it is AEC-Q101 qualified, making it suitable for automotive applications.

  6. What is the operating temperature range of the BC847CQ-7-F?

    The operating temperature range is -65°C to +150°C.

  7. What is the collector-emitter saturation voltage (VCE(sat)) of the BC847CQ-7-F?

    The collector-emitter saturation voltage (VCE(sat)) is 0.25V.

  8. What is the power dissipation (PD) of the BC847CQ-7-F?

    The power dissipation (PD) is 310 mW.

  9. What is the DC current gain (hFE) range of the BC847CQ-7-F?

    The DC current gain (hFE) ranges from 420 to 800.

  10. Is the BC847CQ-7-F RoHS compliant?

    Yes, the BC847CQ-7-F is RoHS compliant.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA
DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
Power - Max:310 mW
Frequency - Transition:300MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
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Similar Products

Part Number BC847CQ-7-F BC847CT-7-F BC847CW-7-F BC847BQ-7-F BC847C-7-F
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active Active Active
Transistor Type NPN NPN NPN NPN NPN
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA 15nA (ICBO) 20nA (ICBO) 15nA 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V 420 @ 2mA, 5V 420 @ 2mA, 5V 200 @ 2mA, 5V 420 @ 2mA, 5V
Power - Max 310 mW 150 mW 200 mW 310 mW 300 mW
Frequency - Transition 300MHz 100MHz 300MHz 300MHz 300MHz
Operating Temperature -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 SOT-523 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 SOT-523 SOT-323 SOT-23-3 SOT-23-3

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