Overview
The BC847CT-7-F is a small signal NPN bipolar transistor manufactured by Diodes Incorporated. It is part of the BC847 series, which includes the BC847AT and BC847BT variants. This transistor is known for its high collector-emitter breakdown voltage and is designed for use in a variety of small signal applications. The device is packaged in an ultra-small SOT523 surface-mount package, making it ideal for space-constrained designs. It is also fully RoHS compliant and lead-free, adhering to environmental regulations.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit | Test Condition |
|---|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage | BVCBO | 50 | - | - | V | IC = 10µA, IE = 0 |
| Collector-Emitter Breakdown Voltage | BVCEO | 45 | - | - | V | IC = 1mA, IB = 0 |
| Emitter-Base Breakdown Voltage | BVEBO | 6 | - | - | V | IE = 10µA, IC = 0 |
| DC Current Gain | hFE | 110 | 200 | 420 | - | VCE = 5V, IC = 2mA |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | - | 250 | mV | IC = 10mA, IB = 0.5mA |
| Base-Emitter Saturation Voltage | VBE(sat) | - | 700 | 900 | mV | IC = 10mA, IB = 0.5mA |
| Collector Current | IC | - | - | 100 | mA | - |
| Power Dissipation | Pd | - | - | 150 | mW | - |
| Package | - | - | - | SOT523 | - | - |
Key Features
- Epitaxial planar die construction for high reliability and performance.
- Ultra-small SOT523 surface-mount package, ideal for space-constrained designs.
- High collector-emitter breakdown voltage (BVCEO > 45V).
- Collector current of up to 100mA.
- Totally lead-free and fully RoHS compliant.
- Halogen and antimony free, adhering to 'Green' product standards.
- Complementary PNP type available (MMBT3906T).
Applications
The BC847CT-7-F transistor is suitable for a wide range of small signal applications, including general-purpose switching and amplification. It is particularly useful in designs where space is limited due to its ultra-small package. Common applications include audio amplifiers, signal processing circuits, and other low-power electronic devices.
Q & A
- What is the collector-emitter breakdown voltage of the BC847CT-7-F transistor?
The collector-emitter breakdown voltage (BVCEO) is greater than 45V. - What is the maximum collector current for the BC847CT-7-F?
The maximum collector current (IC) is 100mA. - Is the BC847CT-7-F RoHS compliant?
Yes, the BC847CT-7-F is fully RoHS compliant and lead-free. - What is the package type of the BC847CT-7-F transistor?
The package type is SOT523. - Does the BC847CT-7-F have a complementary PNP type?
Yes, the complementary PNP type is the MMBT3906T. - What are the environmental benefits of the BC847CT-7-F?
The BC847CT-7-F is halogen and antimony free, making it a 'Green' product. - What is the power dissipation of the BC847CT-7-F transistor?
The power dissipation (Pd) is up to 150mW. - Is the BC847CT-7-F suitable for high-frequency applications?
The transistor has a current gain-bandwidth product (fT) of 100MHz, making it suitable for high-frequency applications. - What is the base-emitter saturation voltage of the BC847CT-7-F?
The base-emitter saturation voltage (VBE(sat)) is between 700mV and 900mV. - Is the BC847CT-7-F available in automotive-compliant versions?
Yes, an automotive-compliant part is available under a separate datasheet (BC847BTQ).
