BAS521Q-13
  • Share:

Diodes Incorporated BAS521Q-13

Manufacturer No:
BAS521Q-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 300V 250MA SOD523
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS521Q-13 is a high voltage switching diode manufactured by Diodes Incorporated. This component is designed for high-performance applications requiring fast switching speeds and high reverse breakdown voltage. It is particularly suited for automotive and general-purpose use due to its robust specifications and reliability.

Key Specifications

ParameterValue
Maximum Reverse Breakdown Voltage300V
Maximum Forward Current1A
Maximum Forward Voltage Drop1.2V at 1A
Leakage Current at Room Temperature100nA
Switching SpeedMax. 50ns
Package TypeSOD523
Operating Temperature Range-55°C to 150°C

Key Features

  • Fast Switching Speed: Maximum of 50ns, ensuring quick response times in high-frequency applications.
  • High Reverse Breakdown Voltage: 300V, providing robust protection against reverse voltage spikes.
  • Low Leakage Current: 100nA at room temperature, minimizing power loss and enhancing efficiency.
  • Automotive Grade: Suitable for use in automotive applications due to its reliability and performance under varying conditions.

Applications

  • Automotive Systems: Ideal for use in various automotive electronic systems where high reliability and performance are critical.
  • General Purpose Switching: Suitable for general-purpose switching applications requiring fast switching speeds and high voltage handling.
  • Power Supplies: Can be used in power supply circuits to protect against voltage spikes and ensure efficient operation.

Q & A

  1. What is the maximum reverse breakdown voltage of the BAS521Q-13?
    The maximum reverse breakdown voltage is 300V.
  2. What is the typical leakage current at room temperature?
    The leakage current at room temperature is 100nA.
  3. What is the maximum switching speed of the BAS521Q-13?
    The maximum switching speed is 50ns.
  4. What package type is the BAS521Q-13 available in?
    The BAS521Q-13 is available in the SOD523 package type.
  5. Is the BAS521Q-13 suitable for automotive applications?
    Yes, the BAS521Q-13 is suitable for automotive applications.
  6. What is the operating temperature range of the BAS521Q-13?
    The operating temperature range is -55°C to 150°C.
  7. What is the maximum forward current rating of the BAS521Q-13?
    The maximum forward current rating is 1A.
  8. What is the typical forward voltage drop at 1A?
    The typical forward voltage drop at 1A is 1.2V.
  9. Where can I find detailed specifications for the BAS521Q-13?
    Detailed specifications can be found in the datasheet available on Diodes Incorporated's official website or through distributors like Digi-Key.
  10. Is the BAS521Q-13 available in tape and reel packaging?
    Yes, the BAS521Q-13 is available in tape and reel packaging, with 10,000 units per reel.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):300 V
Current - Average Rectified (Io):250mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 100 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:150 nA @ 250 V
Capacitance @ Vr, F:5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SC-79, SOD-523
Supplier Device Package:SOD-523
Operating Temperature - Junction:-65°C ~ 150°C
0 Remaining View Similar

In Stock

$0.46
1,769

Please send RFQ , we will respond immediately.

Related Product By Categories

BAV102
BAV102
onsemi
DIODE GEN PURP 150V 200MA LL34
BAS20WTHE3-TP
BAS20WTHE3-TP
Micro Commercial Co
DIODE GEN PURP 150V 200MA SOT323
PMEG2010ER,115
PMEG2010ER,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A CFP3
BAS16-E3-08
BAS16-E3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOT23
MBRA120ET3G
MBRA120ET3G
onsemi
DIODE SCHOTTKY 20V 1A SMA
MURS110T3G
MURS110T3G
onsemi
DIODE GEN PURP 100V 1A SMB
BAS21WQ-7-F
BAS21WQ-7-F
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOT323
1N4004GP
1N4004GP
onsemi
DIODE GEN PURP 400V 1A DO41
STTH30L06G
STTH30L06G
STMicroelectronics
DIODE GEN PURP 600V 30A D2PAK
1N4001GPHE3/54
1N4001GPHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL
NRVBA140T3G
NRVBA140T3G
onsemi
DIODE SCHOTTKY 40V 1A SMA
NRVBS360BT3G
NRVBS360BT3G
onsemi
DIODE SCHOTTKY 60V 3A SMB

Related Product By Brand

BAV23SQ-13-F
BAV23SQ-13-F
Diodes Incorporated
DIODE ARRAY GP 200V SOT23-3
MBR20H100CT-G1
MBR20H100CT-G1
Diodes Incorporated
DIODE ARRAY SCHOTTKY 100V TO220
BZX84C16TS-7-F
BZX84C16TS-7-F
Diodes Incorporated
DIODE ZENER ARRAY 16V SOT363
BZX84C39S-7
BZX84C39S-7
Diodes Incorporated
DIODE ZENER ARRAY 39V SOT363
BZX84C6V2-7-F-31
BZX84C6V2-7-F-31
Diodes Incorporated
DIODE ZENER 6.2V 300MW SOT23
2N7002E-7-F
2N7002E-7-F
Diodes Incorporated
MOSFET N-CH 60V 250MA SOT23-3
BSS138Q-7-F
BSS138Q-7-F
Diodes Incorporated
MOSFET N-CH 50V 200MA SOT23-3
MMBF170-7-F
MMBF170-7-F
Diodes Incorporated
MOSFET N-CH 60V 500MA SOT23-3
2N7002TA
2N7002TA
Diodes Incorporated
MOSFET N-CH 60V 115MA SOT23-3
BSS84TA
BSS84TA
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
2N7002W-7-F-79
2N7002W-7-F-79
Diodes Incorporated
DIODE
74LVC1G08FZ4-7
74LVC1G08FZ4-7
Diodes Incorporated
IC GATE AND 1CH 2-INP DFN1410-6