2N7002T-7-G
  • Share:

Diodes Incorporated 2N7002T-7-G

Manufacturer No:
2N7002T-7-G
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V SOT523
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002T-7-G is an N-channel enhancement mode MOSFET produced by Diodes Incorporated. This MOSFET is designed to minimize on-state resistance (RDS(ON)) while maintaining superior switching performance, making it ideal for high-efficiency power management applications. It features a small surface mount package and is fully RoHS compliant, halogen, and antimony free.

Key Specifications

Characteristic Symbol Value Units
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current at TA = +25°C ID 210 mA
Total Power Dissipation at TA = +25°C PD 0.37 W
Drain-Source On-State Resistance at VGS = 10V RDS(ON) 7.5 Ω
Gate-Source Threshold Voltage VGS(TH) 2.5 V
Total Gate Charge at VGS = 4.5V QG 0.223 nC
Input Capacitance Ciss 22 pF
Thermal Resistance, Junction to Ambient RθJA 348 °C/W

Key Features

  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Ultra-Small Surface Mount Package (SOT23)
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free
  • Low Input/Output Leakage

Applications

  • Motor Control
  • Power Management Functions
  • DC-DC Converters
  • Battery Operated Systems
  • Solid-State Relays
  • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.
  • Logic Level Translators
  • High-Speed Line Drivers

Q & A

  1. What is the maximum drain-source voltage (VDS) of the 2N7002T-7-G MOSFET?

    The maximum drain-source voltage (VDS) is 60 V.

  2. What is the continuous drain current at TA = +25°C?

    The continuous drain current at TA = +25°C is 210 mA.

  3. What is the total power dissipation at TA = +25°C?

    The total power dissipation at TA = +25°C is 0.37 W.

  4. What is the drain-source on-state resistance at VGS = 10V?

    The drain-source on-state resistance at VGS = 10V is 7.5 Ω.

  5. What is the gate-source threshold voltage?

    The gate-source threshold voltage is 2.5 V.

  6. What is the total gate charge at VGS = 4.5V?

    The total gate charge at VGS = 4.5V is 0.223 nC.

  7. What is the input capacitance?

    The input capacitance is 22 pF.

  8. What is the thermal resistance, junction to ambient?

    The thermal resistance, junction to ambient, is 348 °C/W.

  9. Is the 2N7002T-7-G MOSFET RoHS compliant?

    Yes, the 2N7002T-7-G MOSFET is totally lead-free and fully RoHS compliant.

  10. What are some common applications of the 2N7002T-7-G MOSFET?

    Common applications include motor control, power management functions, DC-DC converters, battery operated systems, and solid-state relays.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
0 Remaining View Similar

In Stock

-
372

Please send RFQ , we will respond immediately.

Same Series
DD26M20JV5Z
DD26M20JV5Z
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S200T2S
DD15S200T2S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HT0/AA
CBC13W3S10HT0/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S20WV3S/AA
DD15S20WV3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10HTS/AA
CBC9W4S10HTS/AA
CONN D-SUB RCPT 9POS CRIMP
DD15S20J0S
DD15S20J0S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S00X
DD26S2S00X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20000/AA
DD26S20000/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0T20
DD26S2S0T20
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S3200T2X
DD44S3200T2X
CONN D-SUB HD RCPT 44P VERT SLDR
CBC47W1S1S50V5S/AA
CBC47W1S1S50V5S/AA
CONN D-SUB RCPT 47POS CRIMP
DD26S20WE30/AA
DD26S20WE30/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number 2N7002T-7-G 2N7002T-7-F
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Obsolete Active
FET Type - N-Channel
Technology - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - 60 V
Current - Continuous Drain (Id) @ 25°C - 115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) - 5V, 10V
Rds On (Max) @ Id, Vgs - 7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id - 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) - ±20V
Input Capacitance (Ciss) (Max) @ Vds - 50 pF @ 25 V
FET Feature - -
Power Dissipation (Max) - 150mW (Ta)
Operating Temperature - -55°C ~ 150°C (TJ)
Mounting Type - Surface Mount
Supplier Device Package - SOT-523
Package / Case - SOT-523

Related Product By Categories

FQD2N90TM
FQD2N90TM
onsemi
MOSFET N-CH 900V 1.7A DPAK
STP20NM50
STP20NM50
STMicroelectronics
MOSFET N-CH 500V 20A TO220AB
NTH4LN019N65S3H
NTH4LN019N65S3H
onsemi
POWER MOSFET, N-CHANNEL, SUPERFE
CSD17484F4
CSD17484F4
Texas Instruments
MOSFET N-CH 30V 3A 3PICOSTAR
FDMA430NZ
FDMA430NZ
onsemi
MOSFET N-CH 30V 5A 6MICROFET
STF13N80K5
STF13N80K5
STMicroelectronics
MOSFET N-CH 800V 12A TO220FP
BUK7Y2R0-40HX
BUK7Y2R0-40HX
Nexperia USA Inc.
MOSFET N-CH 40V 120A LFPAK56
STV270N4F3
STV270N4F3
STMicroelectronics
MOSFET N-CH 40V 270A 10POWERSO
STF9N60M2
STF9N60M2
STMicroelectronics
MOSFET N-CH 600V 5.5A TO220FP
NTD3055L170T4
NTD3055L170T4
onsemi
MOSFET N-CH 60V 9A DPAK
BSS84TC
BSS84TC
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
NTNS3A65PZT5GHW
NTNS3A65PZT5GHW
onsemi
MOSFET P-CH 20V 281MA SOT883

Related Product By Brand

BAV99BRW-7-F
BAV99BRW-7-F
Diodes Incorporated
DIODE ARRAY GP 75V 150MA SOT363
BAV23AQ-7-F
BAV23AQ-7-F
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100
BAS70-04T-7-F
BAS70-04T-7-F
Diodes Incorporated
DIODE ARRAY SCHOTTKY 70V SOT523
BAT54CDW-13-F
BAT54CDW-13-F
Diodes Incorporated
DIODE ARRAY SCHOTTKY 30V SOT363
BAT54CW-7-F-79
BAT54CW-7-F-79
Diodes Incorporated
DIODE ARRAY SCHOTTKY 30V SOT323
BAT42W-7
BAT42W-7
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOD123
BZX84C11W-7
BZX84C11W-7
Diodes Incorporated
DIODE ZENER 11V 200MW SOT323
MMBTA63-7-F
MMBTA63-7-F
Diodes Incorporated
TRANS PNP DARL 30V 0.5A SOT23-3
BC848B-7-F
BC848B-7-F
Diodes Incorporated
TRANS NPN 30V 0.1A SOT23-3
BSS8402DW-7
BSS8402DW-7
Diodes Incorporated
MOSFET N/P-CH 60V/50V SC70-6
BSS123TC
BSS123TC
Diodes Incorporated
MOSFET N-CH 100V 170MA SOT23-3
74LVC1G14Z-7
74LVC1G14Z-7
Diodes Incorporated
IC INVERT SCHMITT 1CH 1IN SOT553