2N7002T-7-G
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Diodes Incorporated 2N7002T-7-G

Manufacturer No:
2N7002T-7-G
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V SOT523
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002T-7-G is an N-channel enhancement mode MOSFET produced by Diodes Incorporated. This MOSFET is designed to minimize on-state resistance (RDS(ON)) while maintaining superior switching performance, making it ideal for high-efficiency power management applications. It features a small surface mount package and is fully RoHS compliant, halogen, and antimony free.

Key Specifications

Characteristic Symbol Value Units
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current at TA = +25°C ID 210 mA
Total Power Dissipation at TA = +25°C PD 0.37 W
Drain-Source On-State Resistance at VGS = 10V RDS(ON) 7.5 Ω
Gate-Source Threshold Voltage VGS(TH) 2.5 V
Total Gate Charge at VGS = 4.5V QG 0.223 nC
Input Capacitance Ciss 22 pF
Thermal Resistance, Junction to Ambient RθJA 348 °C/W

Key Features

  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Ultra-Small Surface Mount Package (SOT23)
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free
  • Low Input/Output Leakage

Applications

  • Motor Control
  • Power Management Functions
  • DC-DC Converters
  • Battery Operated Systems
  • Solid-State Relays
  • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.
  • Logic Level Translators
  • High-Speed Line Drivers

Q & A

  1. What is the maximum drain-source voltage (VDS) of the 2N7002T-7-G MOSFET?

    The maximum drain-source voltage (VDS) is 60 V.

  2. What is the continuous drain current at TA = +25°C?

    The continuous drain current at TA = +25°C is 210 mA.

  3. What is the total power dissipation at TA = +25°C?

    The total power dissipation at TA = +25°C is 0.37 W.

  4. What is the drain-source on-state resistance at VGS = 10V?

    The drain-source on-state resistance at VGS = 10V is 7.5 Ω.

  5. What is the gate-source threshold voltage?

    The gate-source threshold voltage is 2.5 V.

  6. What is the total gate charge at VGS = 4.5V?

    The total gate charge at VGS = 4.5V is 0.223 nC.

  7. What is the input capacitance?

    The input capacitance is 22 pF.

  8. What is the thermal resistance, junction to ambient?

    The thermal resistance, junction to ambient, is 348 °C/W.

  9. Is the 2N7002T-7-G MOSFET RoHS compliant?

    Yes, the 2N7002T-7-G MOSFET is totally lead-free and fully RoHS compliant.

  10. What are some common applications of the 2N7002T-7-G MOSFET?

    Common applications include motor control, power management functions, DC-DC converters, battery operated systems, and solid-state relays.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
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Similar Products

Part Number 2N7002T-7-G 2N7002T-7-F
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Obsolete Active
FET Type - N-Channel
Technology - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - 60 V
Current - Continuous Drain (Id) @ 25°C - 115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) - 5V, 10V
Rds On (Max) @ Id, Vgs - 7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id - 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) - ±20V
Input Capacitance (Ciss) (Max) @ Vds - 50 pF @ 25 V
FET Feature - -
Power Dissipation (Max) - 150mW (Ta)
Operating Temperature - -55°C ~ 150°C (TJ)
Mounting Type - Surface Mount
Supplier Device Package - SOT-523
Package / Case - SOT-523

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