2N7002T-7-F
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Diodes Incorporated 2N7002T-7-F

Manufacturer No:
2N7002T-7-F
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 115MA SOT-523
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002T-7-F is a N-channel enhancement-mode MOSFET produced by Diodes Incorporated. It is designed with a moulded plastic case and solderable matte tin annealed over alloy 42 lead-frame terminals, adhering to the MIL-STD-202 standard. This MOSFET is optimized to minimize the ON-state resistance (RDS(ON)) while maintaining superior switching performance, making it ideal for high-efficiency power management applications. The device is fabricated using metal-oxide semiconductor technology, ensuring high reliability and efficiency for high-speed switching. It is encapsulated in an ultra-small surface-mount package, specifically the SOT-523 package, and is RoHS and REACH compliant, ensuring environmental friendliness.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS 60 V
Drain-Source On Resistance (Max) RDS(ON) 7.5 Ω
Gate Threshold Voltage VGS(th) 1.0 - 2.0 V
Continuous Drain Current ID 0.115 A (at 25°C), 0.073 A (at 100°C) A
Input Capacitance CISS 37.8 - 50 pF
Operating Temperature Range TJ -55 to 150 °C
Storage Temperature Range TSTG -55 to 150 °C
Package Style SOT-523
Mounting Method Surface Mount

Key Features

  • Low ON-resistance (RDS(ON))
  • Low gate threshold voltage (VGS(th))
  • Low input capacitance (CISS)
  • Fast switching speed
  • Low input/output leakage
  • Ultra-small surface-mount package (SOT-523)
  • Halogen-free, Green device
  • Moisture sensitivity level 1 as per J-STD-020
  • UL94V-0 Flammability rating

Applications

  • Power Management
  • DC-DC Converters
  • Battery Operated Systems and Solid-State Relays
  • Motor control
  • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.
  • Defence, Military & Aerospace
  • Lighting, Commercial

Q & A

  1. What is the drain-to-source voltage rating of the 2N7002T-7-F MOSFET?

    The drain-to-source voltage rating is 60 V.

  2. What is the maximum drain-source on-resistance (RDS(ON)) of the 2N7002T-7-F?

    The maximum drain-source on-resistance (RDS(ON)) is 7.5 Ω.

  3. What is the gate threshold voltage range of the 2N7002T-7-F?

    The gate threshold voltage range is 1.0 to 2.0 V.

  4. What is the continuous drain current rating of the 2N7002T-7-F at 25°C and 100°C?

    The continuous drain current rating is 0.115 A at 25°C and 0.073 A at 100°C.

  5. What is the input capacitance of the 2N7002T-7-F?

    The input capacitance is between 37.8 and 50 pF.

  6. What is the operating temperature range of the 2N7002T-7-F?

    The operating temperature range is -55 to 150 °C.

  7. What package style is the 2N7002T-7-F available in?

    The 2N7002T-7-F is available in the SOT-523 package.

  8. Is the 2N7002T-7-F RoHS and REACH compliant?

    Yes, the 2N7002T-7-F is RoHS and REACH compliant.

  9. What are some typical applications of the 2N7002T-7-F MOSFET?

    Typical applications include power management, DC-DC converters, battery operated systems, motor control, and drivers for various devices.

  10. What is the moisture sensitivity level of the 2N7002T-7-F?

    The moisture sensitivity level is rated at 1 as per J-STD-020.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):150mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-523
Package / Case:SOT-523
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Same Series
2N7002TQ-7-F
2N7002TQ-7-F
MOSFET N-CH 60V 115MA SOT523
2N7002T-7
2N7002T-7
MOSFET N-CH 60V 115MA SOT-523

Similar Products

Part Number 2N7002T-7-F 2N7002W-7-F 2N7002TQ-7-F 2N7002T-7-G 2N7002-7-F 2N7002E-7-F 2N7002Q-7-F
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active Obsolete Active Active Active
FET Type N-Channel N-Channel N-Channel - N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) - MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V - 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 115mA (Ta) 115mA (Ta) 115mA (Ta) - 115mA (Ta) 250mA (Ta) 170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V 5V, 10V - 5V, 10V 4.5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 7.5Ohm @ 50mA, 5V 7.5Ohm @ 50mA, 5V 13.5Ohm @ 500mA, 10V - 7.5Ohm @ 50mA, 5V 3Ohm @ 250mA, 10V 5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA - - 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - - - - - 0.22 nC @ 4.5 V 0.233 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V - ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 25 V 50 pF @ 25 V 50 pF @ 25 V - 50 pF @ 25 V 50 pF @ 25 V 50 pF @ 25 V
FET Feature - - - - - - -
Power Dissipation (Max) 150mW (Ta) 200mW (Ta) 150mW (Ta) - 370mW (Ta) 370mW (Ta) 370mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount - Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-523 SOT-323 SOT-523 - SOT-23-3 SOT-23-3 SOT-23-3
Package / Case SOT-523 SC-70, SOT-323 SOT-523 - TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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IC COMPARATOR DUAL DIFF TSSOP-8