2N7002-7-F
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Diodes Incorporated 2N7002-7-F

Manufacturer No:
2N7002-7-F
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 115MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002-7-F is a N-channel enhancement mode MOSFET transistor manufactured by Diodes Incorporated. It is part of the 2N7002 series and is available in a SOT-23-3 package. This MOSFET is designed to minimize on-state resistance (RDS(on)) while maintaining superior switching performance, making it ideal for high-efficiency power management applications.

Key Specifications

FET Type N-Channel
Drain-to-Source Voltage (Vdss) 60 V
Drain-Source On Resistance (RDS(on)) Max 7.5 Ω @ VGS = 5V
Rated Power Dissipation 300 mW
Package Style SOT-23 (SC-59, TO-236)
Mounting Method Surface Mount
Continuous Drain Current (VGS = 10V) 210 mA @ TA = +25°C
Gate-Source Voltage Continuous ±20 V
Operating Temperature Range -55 to +150 °C
Gate Threshold Voltage (VGS(th)) 1.0 to 2.5 V

Key Features

  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Small Surface Mount Package
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. “Green” Device

Applications

  • Motor Control
  • Power Management Functions
  • Amplifier Circuits
  • Switching, Linear, and Digital Logic Applications

Q & A

  1. What is the drain-to-source voltage (Vdss) of the 2N7002-7-F MOSFET?

    The drain-to-source voltage (Vdss) of the 2N7002-7-F MOSFET is 60 V.

  2. What is the maximum drain-source on resistance (RDS(on)) of the 2N7002-7-F?

    The maximum drain-source on resistance (RDS(on)) is 7.5 Ω at VGS = 5V.

  3. What is the package style of the 2N7002-7-F MOSFET?

    The package style is SOT-23 (SC-59, TO-236).

  4. What is the mounting method for the 2N7002-7-F?

    The mounting method is Surface Mount.

  5. What is the continuous drain current rating for the 2N7002-7-F at 25°C?

    The continuous drain current rating is 210 mA at VGS = 10V and TA = +25°C.

  6. What is the operating temperature range of the 2N7002-7-F?

    The operating temperature range is -55 to +150 °C.

  7. Is the 2N7002-7-F RoHS compliant?

    Yes, the 2N7002-7-F is totally lead-free and fully RoHS compliant.

  8. What are some common applications of the 2N7002-7-F MOSFET?

    Common applications include motor control, power management functions, amplifier circuits, and switching, linear, and digital logic applications.

  9. What is the gate threshold voltage range for the 2N7002-7-F?

    The gate threshold voltage range is 1.0 to 2.5 V.

  10. Is the 2N7002-7-F suitable for automotive applications?

    Yes, there are versions of the 2N7002 series qualified to AEC-Q101 standards for high reliability, making them suitable for automotive applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):370mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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In Stock

$0.21
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Same Series
2N7002-7
2N7002-7
MOSFET N-CH 60V 115MA SOT23-3

Similar Products

Part Number 2N7002-7-F 2N7002Q-7-F 2N7002E-7-F 2N7002T-7-F
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 115mA (Ta) 170mA (Ta) 250mA (Ta) 115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V 4.5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 7.5Ohm @ 50mA, 5V 5Ohm @ 500mA, 10V 3Ohm @ 250mA, 10V 7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - 0.233 nC @ 10 V 0.22 nC @ 4.5 V -
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 25 V 50 pF @ 25 V 50 pF @ 25 V 50 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 370mW (Ta) 370mW (Ta) 370mW (Ta) 150mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3 SOT-23-3 SOT-523
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 SOT-523

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