BCP5616TQTA
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Diodes Incorporated BCP5616TQTA

Manufacturer No:
BCP5616TQTA
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
PWR MID PERF TRANSISTOR SOT223 T
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCP5616TQTA is a low-power NPN transistor manufactured by Diodes Incorporated. This transistor is housed in a SOT-223 package, which is suitable for surface mounting and offers good thermal performance. The device is designed to meet various environmental and regulatory standards, including compliance with the 2002/93/EC European Directive and ECOPACK specifications for lead-free second-level interconnects.

Key Specifications

Parameter Value Unit
Collector-base voltage (VCBO) 100 V
Collector-emitter voltage (VCEO) 80 V
Emitter-base voltage (VEBO) 5 V
Collector current (IC) 1 A
Collector peak current (ICM) 1.5 A (tP < 5ms)
Base current (IB) 0.1 A
Base peak current (IBM) 0.2 A (tP < 5ms)
Total dissipation at Tamb = 25°C (Ptot) 1.6 W
Storage temperature (Tstg) -65 to 150 °C
Max. operating junction temperature (TJ) 150 °C
Thermal resistance junction-ambient (Rthj-amb) 78 °C/W

Key Features

  • Silicon epitaxial planar NPN medium voltage transistor
  • SOT-223 plastic package for surface mounting circuits
  • Available in tape and reel packing
  • In compliance with the 2002/93/EC European Directive and ECOPACK specifications
  • Low power consumption and high reliability

Applications

  • Medium voltage load switch transistor
  • Output stage for audio amplifiers circuits
  • Automotive post-voltage regulation

Q & A

  1. What is the collector-base voltage rating of the BCP5616TQTA?

    The collector-base voltage (VCBO) is rated at 100 V.

  2. What is the maximum collector current for the BCP5616TQTA?

    The maximum collector current (IC) is 1 A, with a peak current of 1.5 A for pulses less than 5 ms.

  3. What is the thermal resistance junction-ambient for the BCP5616TQTA?

    The thermal resistance junction-ambient (Rthj-amb) is 78 °C/W.

  4. Is the BCP5616TQTA available in tape and reel packing?

    Yes, the BCP5616TQTA is available in tape and reel packing.

  5. What are some common applications of the BCP5616TQTA?

    Common applications include medium voltage load switch transistor, output stage for audio amplifiers circuits, and automotive post-voltage regulation.

  6. What is the maximum operating junction temperature for the BCP5616TQTA?

    The maximum operating junction temperature (TJ) is 150 °C.

  7. Is the BCP5616TQTA compliant with environmental regulations?

    Yes, it is compliant with the 2002/93/EC European Directive and ECOPACK specifications.

  8. What is the package type of the BCP5616TQTA?

    The BCP5616TQTA is housed in a SOT-223 package.

  9. What is the collector-emitter breakdown voltage of the BCP5616TQTA?

    The collector-emitter breakdown voltage (V(BR)CEO) is 80 V.

  10. What is the base-emitter on voltage of the BCP5616TQTA?

    The base-emitter on voltage (VBE(on)) is approximately 1 V at IC = 500 mA and VCE = 2 V.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 2V
Power - Max:2.5 W
Frequency - Transition:150MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SOT-223-3
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Similar Products

Part Number BCP5616TQTA BCP5616TTA BCP5616TQTC BCP5616QTA
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active Active
Transistor Type NPN NPN NPN NPN
Current - Collector (Ic) (Max) 1 A 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 80 V 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V
Power - Max 2.5 W 2.5 W 2.5 W 2 W
Frequency - Transition 150MHz 150MHz 150MHz 150MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package SOT-223-3 SOT-223-3 SOT-223-3 SOT-223-3

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IC COMPARATOR DUAL DIFF TSSOP-8