BCP5616TQTA
  • Share:

Diodes Incorporated BCP5616TQTA

Manufacturer No:
BCP5616TQTA
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
PWR MID PERF TRANSISTOR SOT223 T
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCP5616TQTA is a low-power NPN transistor manufactured by Diodes Incorporated. This transistor is housed in a SOT-223 package, which is suitable for surface mounting and offers good thermal performance. The device is designed to meet various environmental and regulatory standards, including compliance with the 2002/93/EC European Directive and ECOPACK specifications for lead-free second-level interconnects.

Key Specifications

Parameter Value Unit
Collector-base voltage (VCBO) 100 V
Collector-emitter voltage (VCEO) 80 V
Emitter-base voltage (VEBO) 5 V
Collector current (IC) 1 A
Collector peak current (ICM) 1.5 A (tP < 5ms)
Base current (IB) 0.1 A
Base peak current (IBM) 0.2 A (tP < 5ms)
Total dissipation at Tamb = 25°C (Ptot) 1.6 W
Storage temperature (Tstg) -65 to 150 °C
Max. operating junction temperature (TJ) 150 °C
Thermal resistance junction-ambient (Rthj-amb) 78 °C/W

Key Features

  • Silicon epitaxial planar NPN medium voltage transistor
  • SOT-223 plastic package for surface mounting circuits
  • Available in tape and reel packing
  • In compliance with the 2002/93/EC European Directive and ECOPACK specifications
  • Low power consumption and high reliability

Applications

  • Medium voltage load switch transistor
  • Output stage for audio amplifiers circuits
  • Automotive post-voltage regulation

Q & A

  1. What is the collector-base voltage rating of the BCP5616TQTA?

    The collector-base voltage (VCBO) is rated at 100 V.

  2. What is the maximum collector current for the BCP5616TQTA?

    The maximum collector current (IC) is 1 A, with a peak current of 1.5 A for pulses less than 5 ms.

  3. What is the thermal resistance junction-ambient for the BCP5616TQTA?

    The thermal resistance junction-ambient (Rthj-amb) is 78 °C/W.

  4. Is the BCP5616TQTA available in tape and reel packing?

    Yes, the BCP5616TQTA is available in tape and reel packing.

  5. What are some common applications of the BCP5616TQTA?

    Common applications include medium voltage load switch transistor, output stage for audio amplifiers circuits, and automotive post-voltage regulation.

  6. What is the maximum operating junction temperature for the BCP5616TQTA?

    The maximum operating junction temperature (TJ) is 150 °C.

  7. Is the BCP5616TQTA compliant with environmental regulations?

    Yes, it is compliant with the 2002/93/EC European Directive and ECOPACK specifications.

  8. What is the package type of the BCP5616TQTA?

    The BCP5616TQTA is housed in a SOT-223 package.

  9. What is the collector-emitter breakdown voltage of the BCP5616TQTA?

    The collector-emitter breakdown voltage (V(BR)CEO) is 80 V.

  10. What is the base-emitter on voltage of the BCP5616TQTA?

    The base-emitter on voltage (VBE(on)) is approximately 1 V at IC = 500 mA and VCE = 2 V.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 2V
Power - Max:2.5 W
Frequency - Transition:150MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SOT-223-3
0 Remaining View Similar

In Stock

$0.12
2,198

Please send RFQ , we will respond immediately.

Same Series
DD26M20JV5Z
DD26M20JV5Z
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S20LVLS
DD15S20LVLS
CONN D-SUB HD RCPT 15P SLDR CUP
CBC47W1S100E30
CBC47W1S100E30
CONN D-SUB RCPT 47POS CRIMP
CBC13W3S10HV50/AA
CBC13W3S10HV50/AA
CONN D-SUB RCPT 13POS CRIMP
DD26M20HV50/AA
DD26M20HV50/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S10HE2X/AA
DD26S10HE2X/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S2S50T0/AA
DD26S2S50T0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V50
DD26S2S0V50
CONN D-SUB HD RCPT 26P SLDR CUP
CBC13W3S10HV3S/AA
CBC13W3S10HV3S/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S2S50V50
DD26S2S50V50
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S50TX/AA
DD44S32S50TX/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WE30/AA
DD26S20WE30/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number BCP5616TQTA BCP5616TTA BCP5616TQTC BCP5616QTA
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active Active
Transistor Type NPN NPN NPN NPN
Current - Collector (Ic) (Max) 1 A 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 80 V 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V
Power - Max 2.5 W 2.5 W 2.5 W 2 W
Frequency - Transition 150MHz 150MHz 150MHz 150MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package SOT-223-3 SOT-223-3 SOT-223-3 SOT-223-3

Related Product By Categories

BC807-25B5000
BC807-25B5000
Infineon Technologies
TRANS PNP 45V 0.5A SOT23
MMBT3904-7-F
MMBT3904-7-F
Diodes Incorporated
TRANS NPN 40V 0.2A SOT23-3
ST13003N
ST13003N
STMicroelectronics
TRANS NPN 400V 1A SOT32-3
BC857A_R1_00001
BC857A_R1_00001
Panjit International Inc.
TRANS PNP 45V 0.1A SOT23
MPSA29-D26Z
MPSA29-D26Z
onsemi
TRANS NPN DARL 100V 0.8A TO92-3
MMBT3906LT1
MMBT3906LT1
Infineon Technologies
TRANS PNP 40V 0.2A SOT23-3
BC846BQBZ
BC846BQBZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
BC817-25QB-QZ
BC817-25QB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
BC847CWH6778XTSA1
BC847CWH6778XTSA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT323
BC857C TR PBFREE
BC857C TR PBFREE
Central Semiconductor Corp
TRANS PNP 45V 0.1A SOT23
BD1366STU
BD1366STU
onsemi
TRANS PNP 45V 1.5A TO126-3
BC857CW/DG/B4F
BC857CW/DG/B4F
Nexperia USA Inc.
TRANS PNP 45V 0.1A SC70

Related Product By Brand

1.5KE6V8CA-B
1.5KE6V8CA-B
Diodes Incorporated
TVS DIODE 5.8VWM 10.5VC DO201
BAT54AWQ-13-F
BAT54AWQ-13-F
Diodes Incorporated
SCHOTTKY RECTIFIER SOT323 T&R 10
BAV99TA
BAV99TA
Diodes Incorporated
DIODE ARRAY GP 75V 300MA SOT23-3
BAT54TC
BAT54TC
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOT23-3
BAS21T-7-F
BAS21T-7-F
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOT523
BAS16W-7-G
BAS16W-7-G
Diodes Incorporated
DIODE GEN PURP SOT323
BZX84C6V2TS-7-F
BZX84C6V2TS-7-F
Diodes Incorporated
DIODE ZENER ARRAY 6.2V SOT363
BCP5416QTA
BCP5416QTA
Diodes Incorporated
PWR MID PERF TRANSISTOR SOT223 T
BSS138DWK-7
BSS138DWK-7
Diodes Incorporated
MOSFET BVDSS: 41V~60V SOT363 T&R
2N7002V-7
2N7002V-7
Diodes Incorporated
MOSFET 2N-CH 60V 0.28A SOT-563
2N7002T-7-G
2N7002T-7-G
Diodes Incorporated
MOSFET N-CH 60V SOT523
74LVC1G125QW5-7
74LVC1G125QW5-7
Diodes Incorporated
IC BUFFER NON-INVERT 5.5V SOT25