Overview
The BCX5610TA is a medium power NPN bipolar junction transistor (BJT) manufactured by Diodes Incorporated. This transistor is part of the BCX54 / 55 / 56 series, known for its high reliability and robust performance. It is packaged in a SOT-89 (TO-243AA) surface mount format, making it suitable for a variety of applications requiring compact and efficient transistor solutions.
Key Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Collector-Base Breakdown Voltage | BVCBO | 100 | V | IC = 100µA |
| Collector-Emitter Breakdown Voltage | BVCEO | 80 | V | IC = 10mA |
| Emitter-Base Breakdown Voltage | BVEBO | 5 | V | IE = 100µA |
| Continuous Collector Current | IC | 1 | A | |
| Peak Pulse Collector Current | ICM | 2 | A | |
| Collector-Emitter Saturation Voltage | VCE(sat) | < 0.5 | V | IC = 500mA, IB = 50mA |
| Static Forward Current Transfer Ratio (hFE) | hFE | 25 - 250 | IC = 150mA, VCE = 2V (Gain Group 10 and 16) | |
| Power Dissipation | PD | 1 | W | |
| Thermal Resistance, Junction to Ambient | RθJA | 124 | °C/W | |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | °C |
Key Features
- High collector-emitter breakdown voltage (BVCEO) of up to 80V, making it suitable for high-voltage applications.
- Continuous collector current of 1A and peak pulse collector current of 2A.
- Low saturation voltage (VCE(sat)) of less than 500mV at 0.5A, ensuring efficient operation.
- Gain groups 10 and 16, providing flexibility in design.
- Epitaxial planar die construction for reliable performance.
- Complementary PNP types available (BCX51, 52, and 53).
- Totally lead-free and fully RoHS compliant, halogen and antimony free, aligning with green device standards.
- Qualified to AEC-Q101 standards for high reliability, suitable for automotive applications.
Applications
- Medium power switching and amplification applications.
- Af driver and output stages.
- Automotive applications requiring high reliability and specific change control (e.g., AEC-Q101 qualified).
- General-purpose power amplification and switching in various electronic systems.
Q & A
- What is the package type of the BCX5610TA transistor?
The BCX5610TA is packaged in a SOT-89 (TO-243AA) surface mount format.
- What is the continuous collector current of the BCX5610TA?
The continuous collector current is 1A.
- What is the collector-emitter breakdown voltage of the BCX5610TA?
The collector-emitter breakdown voltage (BVCEO) is 80V.
- What is the thermal resistance, junction to ambient, of the BCX5610TA?
The thermal resistance, junction to ambient (RθJA), is 124°C/W.
- Is the BCX5610TA RoHS compliant?
Yes, the BCX5610TA is totally lead-free and fully RoHS compliant, halogen and antimony free.
- What are the operating and storage temperature ranges for the BCX5610TA?
The operating and storage temperature range is -55 to +150°C.
- What are the gain groups available for the BCX5610TA?
The BCX5610TA is available in gain groups 10 and 16.
- Does the BCX5610TA have any automotive qualifications?
Yes, it is qualified to AEC-Q101 standards for high reliability, making it suitable for automotive applications.
- What is the collector-emitter saturation voltage of the BCX5610TA?
The collector-emitter saturation voltage (VCE(sat)) is less than 0.5V at 0.5A.
- What is the peak pulse collector current of the BCX5610TA?
The peak pulse collector current (ICM) is 2A.
