BCX5516TA
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Diodes Incorporated BCX5516TA

Manufacturer No:
BCX5516TA
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
TRANS NPN 60V 1A SOT89-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCX5516TA is a medium power NPN bipolar junction transistor (BJT) manufactured by Diodes Incorporated. This transistor is part of the BCX54, BCX55, and BCX56 series, known for their high reliability and suitability for various medium power switching and amplification applications. The BCX5516TA is housed in a SOT89 package, making it compact and suitable for surface mount technology.

Key Specifications

CharacteristicSymbolValueUnitTest Condition
Collector-Base Breakdown VoltageBVCBO60VIC = 100µA
Collector-Emitter Breakdown VoltageBVCEO60VIC = 10mA
Emitter-Base Breakdown VoltageBVEBO5VIE = 100µA
Continuous Collector CurrentIC1A
Peak Pulse Collector CurrentICM2A
Power DissipationPD1W
Thermal Resistance, Junction to AmbientRθJA124°C/W
Operating and Storage Temperature RangeTJ, TSTG-55 to +150°C
Static Forward Current Transfer Ratio (hFE)hFE25 - 40IC = 5mA, VCE = 2V
Collector-Emitter Saturation VoltageVCE(sat)< 500mVIC = 500mA, IB = 50mA

Key Features

  • Epitaxial planar die construction for high reliability and performance.
  • Low saturation voltage (VCE(sat) < 500mV @ 0.5A) for efficient operation.
  • Gain groups 10 and 16, providing flexibility in design.
  • Complementary PNP types: BCX51, 52, and 53.
  • Totally lead-free and fully RoHS compliant, halogen and antimony free, making it a “green” device.
  • Qualified to AEC-Q101 standards for high reliability in automotive applications.
  • SOT89 package with matte tin finish and UL flammability rating 94V-0.

Applications

The BCX5516TA is suitable for medium power switching and amplification applications. It is commonly used in:

  • AF driver and output stages.
  • Automotive applications requiring high reliability and compliance with AEC-Q101 standards.
  • General-purpose switching and amplification in various electronic systems.

Q & A

  1. What is the maximum collector-emitter breakdown voltage of the BCX5516TA?
    The maximum collector-emitter breakdown voltage is 60V.
  2. What is the continuous collector current rating of the BCX5516TA?
    The continuous collector current rating is 1A.
  3. What is the peak pulse collector current rating of the BCX5516TA?
    The peak pulse collector current rating is 2A.
  4. What is the thermal resistance, junction to ambient, of the BCX5516TA?
    The thermal resistance, junction to ambient, is 124°C/W.
  5. Is the BCX5516TA RoHS compliant?
    Yes, the BCX5516TA is totally lead-free and fully RoHS compliant.
  6. What are the operating and storage temperature ranges for the BCX5516TA?
    The operating and storage temperature range is -55 to +150°C.
  7. What is the typical static forward current transfer ratio (hFE) of the BCX5516TA?
    The typical static forward current transfer ratio (hFE) is 25 to 40 at IC = 5mA, VCE = 2V.
  8. What is the collector-emitter saturation voltage of the BCX5516TA?
    The collector-emitter saturation voltage is less than 500mV at IC = 500mA, IB = 50mA.
  9. Is the BCX5516TA suitable for automotive applications?
    Yes, it is qualified to AEC-Q101 standards for high reliability in automotive applications.
  10. What package type is the BCX5516TA housed in?
    The BCX5516TA is housed in a SOT89 package.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 2V
Power - Max:1 W
Frequency - Transition:150MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-243AA
Supplier Device Package:SOT-89-3
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Similar Products

Part Number BCX5516TA BCX5616TA BCX5116TA BCX5216TA BCX5316TA BCX5416TA BCX5510TA
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active Active Active Active Active
Transistor Type NPN NPN PNP PNP PNP NPN NPN
Current - Collector (Ic) (Max) 1 A 1 A 1 A 1 A 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 60 V 80 V 45 V 60 V 80 V 45 V 60 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 63 @ 150mA, 2V
Power - Max 1 W 1 W 1 W 1 W 1 W 1 W 1 W
Frequency - Transition 150MHz 150MHz 150MHz 150MHz 150MHz 150MHz 150MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-243AA TO-243AA TO-243AA TO-243AA TO-243AA TO-243AA TO-243AA
Supplier Device Package SOT-89-3 SOT-89-3 SOT-89-3 SOT-89-3 SOT-89-3 SOT-89-3 SOT-89-3

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