BCX5516TA
  • Share:

Diodes Incorporated BCX5516TA

Manufacturer No:
BCX5516TA
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
TRANS NPN 60V 1A SOT89-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCX5516TA is a medium power NPN bipolar junction transistor (BJT) manufactured by Diodes Incorporated. This transistor is part of the BCX54, BCX55, and BCX56 series, known for their high reliability and suitability for various medium power switching and amplification applications. The BCX5516TA is housed in a SOT89 package, making it compact and suitable for surface mount technology.

Key Specifications

CharacteristicSymbolValueUnitTest Condition
Collector-Base Breakdown VoltageBVCBO60VIC = 100µA
Collector-Emitter Breakdown VoltageBVCEO60VIC = 10mA
Emitter-Base Breakdown VoltageBVEBO5VIE = 100µA
Continuous Collector CurrentIC1A
Peak Pulse Collector CurrentICM2A
Power DissipationPD1W
Thermal Resistance, Junction to AmbientRθJA124°C/W
Operating and Storage Temperature RangeTJ, TSTG-55 to +150°C
Static Forward Current Transfer Ratio (hFE)hFE25 - 40IC = 5mA, VCE = 2V
Collector-Emitter Saturation VoltageVCE(sat)< 500mVIC = 500mA, IB = 50mA

Key Features

  • Epitaxial planar die construction for high reliability and performance.
  • Low saturation voltage (VCE(sat) < 500mV @ 0.5A) for efficient operation.
  • Gain groups 10 and 16, providing flexibility in design.
  • Complementary PNP types: BCX51, 52, and 53.
  • Totally lead-free and fully RoHS compliant, halogen and antimony free, making it a “green” device.
  • Qualified to AEC-Q101 standards for high reliability in automotive applications.
  • SOT89 package with matte tin finish and UL flammability rating 94V-0.

Applications

The BCX5516TA is suitable for medium power switching and amplification applications. It is commonly used in:

  • AF driver and output stages.
  • Automotive applications requiring high reliability and compliance with AEC-Q101 standards.
  • General-purpose switching and amplification in various electronic systems.

Q & A

  1. What is the maximum collector-emitter breakdown voltage of the BCX5516TA?
    The maximum collector-emitter breakdown voltage is 60V.
  2. What is the continuous collector current rating of the BCX5516TA?
    The continuous collector current rating is 1A.
  3. What is the peak pulse collector current rating of the BCX5516TA?
    The peak pulse collector current rating is 2A.
  4. What is the thermal resistance, junction to ambient, of the BCX5516TA?
    The thermal resistance, junction to ambient, is 124°C/W.
  5. Is the BCX5516TA RoHS compliant?
    Yes, the BCX5516TA is totally lead-free and fully RoHS compliant.
  6. What are the operating and storage temperature ranges for the BCX5516TA?
    The operating and storage temperature range is -55 to +150°C.
  7. What is the typical static forward current transfer ratio (hFE) of the BCX5516TA?
    The typical static forward current transfer ratio (hFE) is 25 to 40 at IC = 5mA, VCE = 2V.
  8. What is the collector-emitter saturation voltage of the BCX5516TA?
    The collector-emitter saturation voltage is less than 500mV at IC = 500mA, IB = 50mA.
  9. Is the BCX5516TA suitable for automotive applications?
    Yes, it is qualified to AEC-Q101 standards for high reliability in automotive applications.
  10. What package type is the BCX5516TA housed in?
    The BCX5516TA is housed in a SOT89 package.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 2V
Power - Max:1 W
Frequency - Transition:150MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-243AA
Supplier Device Package:SOT-89-3
0 Remaining View Similar

In Stock

$0.45
1,867

Please send RFQ , we will respond immediately.

Same Series
BCX55TA
BCX55TA
TRANS NPN 60V 1A SOT89-3
BCX5410TA
BCX5410TA
TRANS NPN 45V 1A SOT89-3
BCX5516TA
BCX5516TA
TRANS NPN 60V 1A SOT89-3
BCX5616TA
BCX5616TA
TRANS NPN 80V 1A SOT89-3
BCX5610TA
BCX5610TA
TRANS NPN 80V 1A SOT89-3
BCX5510TA
BCX5510TA
TRANS NPN 60V 1A SOT89-3
BCX54TA
BCX54TA
TRANS NPN 45V 1A SOT89-3
BCX5416TA
BCX5416TA
TRANS NPN 45V 1A SOT89-3

Similar Products

Part Number BCX5516TA BCX5616TA BCX5116TA BCX5216TA BCX5316TA BCX5416TA BCX5510TA
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active Active Active Active Active
Transistor Type NPN NPN PNP PNP PNP NPN NPN
Current - Collector (Ic) (Max) 1 A 1 A 1 A 1 A 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 60 V 80 V 45 V 60 V 80 V 45 V 60 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 63 @ 150mA, 2V
Power - Max 1 W 1 W 1 W 1 W 1 W 1 W 1 W
Frequency - Transition 150MHz 150MHz 150MHz 150MHz 150MHz 150MHz 150MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-243AA TO-243AA TO-243AA TO-243AA TO-243AA TO-243AA TO-243AA
Supplier Device Package SOT-89-3 SOT-89-3 SOT-89-3 SOT-89-3 SOT-89-3 SOT-89-3 SOT-89-3

Related Product By Categories

PMBT2907A,215
PMBT2907A,215
Nexperia USA Inc.
TRANS PNP 60V 0.6A TO236AB
BC817-25W_R1_00001
BC817-25W_R1_00001
Panjit International Inc.
TRANS NPN 45V 0.5A SOT323
BCP69E6327
BCP69E6327
Infineon Technologies
POWER BIPOLAR TRANSISTOR
BC857C/DG/B4235
BC857C/DG/B4235
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
MMBT3904LT1G
MMBT3904LT1G
onsemi
TRANS NPN 40V 0.2A SOT23-3
MMBT2222ALT3G
MMBT2222ALT3G
onsemi
TRANS NPN 40V 0.6A SOT23-3
TIP147G
TIP147G
onsemi
TRANS PNP DARL 100V 10A TO247-3
BCP53-10T115
BCP53-10T115
NXP USA Inc.
TRANS PNP 80V 1A SOT223
BC817-25QB-QZ
BC817-25QB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
2N6045
2N6045
Solid State Inc.
TRANS NPN DARL 100V 8A TO220
BCX 56-10 E6327
BCX 56-10 E6327
Infineon Technologies
TRANS NPN 80V 1A SOT89
BC817-25-QR
BC817-25-QR
Nexperia USA Inc.
TRANS NPN 45V 0.5A TO236AB

Related Product By Brand

1N5711WS-13
1N5711WS-13
Diodes Incorporated
DIODE SCHOTTKY 70V 150MW SOD323
BAS21DWA-7
BAS21DWA-7
Diodes Incorporated
DIODE SW DL 2500V 100MA SOT353
MURS140-13-F
MURS140-13-F
Diodes Incorporated
DIODE GEN PURP 400V 1A SMB
MURS320-13-F
MURS320-13-F
Diodes Incorporated
DIODE GEN PURP 200V 3A SMC
BAT54TQ-7-F
BAT54TQ-7-F
Diodes Incorporated
SCHOTTKY DIODE SOT523 T&R 3K
BAT54T-7
BAT54T-7
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOT523
1N4148WT-7-G
1N4148WT-7-G
Diodes Incorporated
DIODE GEN PURP 80V 125MA SOD523
BZT52HC3V6WF-7
BZT52HC3V6WF-7
Diodes Incorporated
ZENER DIODE SOD123F T&R 3K
BZX84C36W-7-F
BZX84C36W-7-F
Diodes Incorporated
DIODE ZENER 36V 200MW SOT323
BZX84C47-7
BZX84C47-7
Diodes Incorporated
DIODE ZENER 47V 350MW SOT23-3
BCP53TA
BCP53TA
Diodes Incorporated
TRANS PNP 80V 1A SOT223-3
BCP5616TTC
BCP5616TTC
Diodes Incorporated
PWR MID PERF TRANSISTOR SOT223 T