BCX5216TA
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Diodes Incorporated BCX5216TA

Manufacturer No:
BCX5216TA
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
TRANS PNP 60V 1A SOT89-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCX5216TA is a PNP medium power transistor manufactured by Diodes Incorporated. It is part of the BCX51/52/53 series, known for its high reliability and suitability for various medium power applications. This transistor is housed in a SOT89 package, making it compact and efficient for use in a wide range of electronic circuits.

Key Specifications

Characteristic Symbol Value Unit Test Condition
Collector-Base Breakdown Voltage VCBO -60 V IC = -100µA
Collector-Emitter Breakdown Voltage VCEO -60 V IC = -10mA
Emitter-Base Breakdown Voltage VEBO -5 V IE = -10µA
Continuous Collector Current IC -1 A
Peak Pulse Collector Current ICM -2 A
Collector-Emitter Saturation Voltage VCE(sat) -0.5 V IC = -500mA, IB = -50mA
DC Current Gain (hFE) hFE 100 - 250 IC = -150mA, VCE = -2V (16 gain group)
Transition Frequency fT 150 MHz IC = -50mA, VCE = -10V, f = 100MHz
Operating and Storage Temperature Range -55 to 150 °C
Package Type SOT89
Weight 0.052 grams (Approximate)

Key Features

  • High Collector-Emitter Breakdown Voltage: Up to -60V for the BCX5216TA model, ensuring robust performance in various applications.
  • Low Saturation Voltage: VCE(sat) < -500mV @ -0.5A, which minimizes power losses and enhances efficiency.
  • Gain Groups: Available in gain groups 10 and 16, providing flexibility in circuit design.
  • Complementary NPN Types: Compatible with BCX54, 55, and 56 NPN transistors for balanced circuit configurations.
  • Lead-Free and RoHS Compliant: Fully compliant with EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2), and 2015/863/EU (RoHS 3), and halogen- and antimony-free.
  • Automotive Qualification: Qualified to AEC-Q101 standards for high reliability in automotive applications.
  • Compact SOT89 Package: Suitable for space-constrained designs with a weight of approximately 0.052 grams.

Applications

  • Medium Power Switching or Amplification: Ideal for applications requiring medium power switching or amplification due to its high current and voltage ratings.
  • AF Driver and Output Stages: Suitable for use in audio frequency driver and output stages where high fidelity and low distortion are critical.
  • Automotive Systems: Qualified for use in automotive systems that require high reliability and robust performance.

Q & A

  1. What is the collector-emitter breakdown voltage of the BCX5216TA transistor?

    The collector-emitter breakdown voltage (VCEO) of the BCX5216TA transistor is -60V.

  2. What is the continuous collector current rating of the BCX5216TA?

    The continuous collector current (IC) rating of the BCX5216TA is -1A.

  3. What is the peak pulse collector current rating of the BCX5216TA?

    The peak pulse collector current (ICM) rating of the BCX5216TA is -2A.

  4. What is the collector-emitter saturation voltage of the BCX5216TA?

    The collector-emitter saturation voltage (VCE(sat)) of the BCX5216TA is less than -0.5V at IC = -500mA and IB = -50mA.

  5. Is the BCX5216TA RoHS compliant?

    Yes, the BCX5216TA is fully RoHS compliant and lead-free.

  6. What package type is the BCX5216TA available in?

    The BCX5216TA is available in a SOT89 package.

  7. What are the operating and storage temperature ranges for the BCX5216TA?

    The operating and storage temperature ranges for the BCX5216TA are -55°C to 150°C.

  8. Is the BCX5216TA suitable for automotive applications?

    Yes, the BCX5216TA is qualified to AEC-Q101 standards, making it suitable for high-reliability automotive applications.

  9. What are the complementary NPN types for the BCX5216TA?

    The complementary NPN types for the BCX5216TA are BCX54, 55, and 56.

  10. What is the weight of the BCX5216TA transistor?

    The weight of the BCX5216TA transistor is approximately 0.052 grams.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 2V
Power - Max:1 W
Frequency - Transition:150MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-243AA
Supplier Device Package:SOT-89-3
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Similar Products

Part Number BCX5216TA BCX5516TA BCX5316TA BCX5416TA BCX5116TA BCX5210TA BCX5216QTA
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active Active Active Active Active
Transistor Type PNP NPN PNP NPN PNP PNP PNP
Current - Collector (Ic) (Max) 1 A 1 A 1 A 1 A 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 60 V 60 V 80 V 45 V 45 V 60 V 60 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 63 @ 150mA, 2V 100 @ 150mA, 2V
Power - Max 1 W 1 W 1 W 1 W 1 W 1 W 1 W
Frequency - Transition 150MHz 150MHz 150MHz 150MHz 150MHz 150MHz 150MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-243AA TO-243AA TO-243AA TO-243AA TO-243AA TO-243AA TO-243AA
Supplier Device Package SOT-89-3 SOT-89-3 SOT-89-3 SOT-89-3 SOT-89-3 SOT-89-3 SOT-89-3

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