Overview
The BD13610S is a PNP Epitaxial Silicon Transistor manufactured by onsemi (formerly Fairchild Semiconductor). This transistor is part of the BD136 series and is designed for medium power linear and switching applications. It is housed in a TO-126-3 package, which is a common through-hole package. The BD13610S is known for its robust performance and reliability, making it suitable for a variety of electronic circuits.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Voltage-Collector Emitter Breakdown (Max) | 45 | V |
| Vce Saturation (Max) @ Ib | 500 mV @ 50 mA, 500 mA | |
| Operating Temperature | -55 to +150 | °C |
| Transistor Type | PNP | |
| Mounting Type | Through Hole | |
| Current-Collector (Ic) (Max) | 1.5 A | |
| Base Current (IB) (Max) | 0.5 A | |
| Collector Dissipation (PC) | 12.5 W (TC = 25°C), 1.25 W (TA = 25°C) | |
| Junction Temperature (TJ) | 150 | °C |
| DC Current Gain (hFE) (Min) @ Ic | 25 @ IC = -5 mA, 63 @ IC = -150 mA | |
| Collector-Emitter Saturation Voltage (Vce(sat)) | 0.5 V @ IC = -500 mA, IB = -50 mA | |
| Base-Emitter On Voltage (VBE(on)) | -1 V @ VCE = -2 V, IC = -0.5 A |
Key Features
- PNP Epitaxial Silicon Transistor: The BD13610S is a PNP transistor, making it a complement to NPN transistors like the BD135 series.
- Medium Power Capability: Suitable for medium power linear and switching applications.
- High Current Handling: Can handle a maximum collector current of 1.5 A and a base current of up to 0.5 A.
- High Collector Dissipation: The transistor can dissipate up to 12.5 W of power at the case temperature of 25°C.
- Wide Operating Temperature Range: Operates within a temperature range of -55 to +150°C.
- Lead-Free and RoHS Compliant: Ensures compliance with environmental regulations.
Applications
- Medium Power Linear Amplifiers: Suitable for amplifying signals in medium power applications.
- Switching Circuits: Can be used in switching circuits due to its high current handling and fast switching times.
- Power Supplies: Can be used in power supply circuits for voltage regulation and current limiting.
- Motor Control: Used in motor control circuits for driving small to medium-sized motors.
- Automotive Electronics: Suitable for use in automotive electronic systems due to its robust performance and wide operating temperature range.
Q & A
- What is the maximum collector-emitter voltage of the BD13610S transistor?
The maximum collector-emitter voltage (VCEO) is 45 V.
- What is the maximum collector current of the BD13610S transistor?
The maximum collector current (IC) is 1.5 A.
- What is the package type of the BD13610S transistor?
The BD13610S is housed in a TO-126-3 package.
- Is the BD13610S transistor RoHS compliant?
- What are the typical applications of the BD13610S transistor?
The BD13610S is typically used in medium power linear and switching applications, power supplies, motor control, and automotive electronics.
- What is the junction temperature range of the BD13610S transistor?
The junction temperature (TJ) range is up to 150°C.
- What is the collector dissipation power of the BD13610S transistor?
The collector dissipation power (PC) is 12.5 W at the case temperature of 25°C and 1.25 W at ambient temperature of 25°C.
- What is the DC current gain (hFE) of the BD13610S transistor?
The DC current gain (hFE) is 25 at IC = -5 mA and 63 at IC = -150 mA.
- Is the BD13610S transistor still in production?
The BD13610S is marked as 'Last Time Buy' indicating it is being phased out of production.
- What is the base-emitter on voltage (VBE(on)) of the BD13610S transistor?
The base-emitter on voltage (VBE(on)) is -1 V at VCE = -2 V and IC = -0.5 A.
