Overview
The BD13816S is a PNP epitaxial silicon transistor from onsemi, part of the BD136 series. This transistor is designed for medium power linear and switching applications. It is a Pb-free device, making it compliant with current environmental regulations. The BD13816S is packaged in a TO-126 case and is available in various shipping configurations, including tubes and bulk boxes.
Key Specifications
| Parameter | Symbol | Max | Unit |
|---|---|---|---|
| Collector-Base Voltage | VCBO | -60 | V |
| Collector-Emitter Voltage | VCEO | -60 | V |
| Emitter-Base Voltage | VEBO | -5 | V |
| Collector Current (DC) | IC | -1.5 | A |
| Collector Current (Pulse) | ICP | -3.0 | A |
| Base Current | IB | -0.5 | A |
| Collector Dissipation | PC | 12.5 | W |
| Junction Temperature | TJ | 150 | °C |
| Storage Temperature Range | TSTG | -55 to +150 | °C |
| DC Current Gain (VCE = -2 V, IC = -150 mA) | hFE2 | 100 - 250 | |
| Collector-Emitter Saturation Voltage (IC = 500 mA, IB = 50 mA) | VCE(sat) | -0.5 | V |
| Base-Emitter ON Voltage (VCE = -2 V, IC = -0.5 A) | VBE(on) | -1 | V |
Key Features
- Pb-free Device: Compliant with current environmental regulations.
- Medium Power Capability: Suitable for medium power linear and switching applications.
- High Current Gain: DC current gain (hFE) ranges from 100 to 250 at VCE = -2 V and IC = -150 mA.
- Low Saturation Voltage: Collector-Emitter saturation voltage (VCE(sat)) of -0.5 V at IC = 500 mA and IB = 50 mA.
- Wide Operating Temperature Range: Junction temperature up to 150°C and storage temperature range from -55°C to +150°C.
Applications
- Medium Power Linear Applications: Suitable for amplifiers and other linear circuits requiring medium power handling.
- Switching Applications: Can be used in switching circuits where high current gain and low saturation voltage are beneficial.
- Complementary Transistors: Complements the NPN transistors BD135, BD137, and BD139 respectively.
Q & A
- What is the maximum collector-base voltage for the BD13816S?
The maximum collector-base voltage (VCBO) for the BD13816S is -60 V.
- What is the maximum collector current for the BD13816S?
The maximum collector current (IC) for the BD13816S is -1.5 A (DC) and -3.0 A (pulse).
- What is the typical DC current gain for the BD13816S?
The typical DC current gain (hFE) for the BD13816S ranges from 100 to 250 at VCE = -2 V and IC = -150 mA.
- What is the collector-emitter saturation voltage for the BD13816S?
The collector-emitter saturation voltage (VCE(sat)) for the BD13816S is -0.5 V at IC = 500 mA and IB = 50 mA.
- What is the base-emitter ON voltage for the BD13816S?
The base-emitter ON voltage (VBE(on)) for the BD13816S is -1 V at VCE = -2 V and IC = -0.5 A.
- What is the junction temperature range for the BD13816S?
The junction temperature range for the BD13816S is up to 150°C.
- What is the storage temperature range for the BD13816S?
The storage temperature range for the BD13816S is from -55°C to +150°C.
- Is the BD13816S Pb-free?
Yes, the BD13816S is a Pb-free device.
- What are the typical applications for the BD13816S?
The BD13816S is typically used in medium power linear and switching applications.
- Can the BD13816S be used in life support systems or medical devices?
No, the BD13816S is not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices.
