BD1366S
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onsemi BD1366S

Manufacturer No:
BD1366S
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS PNP 45V 1.5A TO126-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BD136 is a medium power PNP transistor manufactured by ON Semiconductor. It is part of the BD136 series, which includes the BD138 and BD140. This transistor is known for its high collector current and is suitable for controlling heavy loads.

The BD136 is housed in a TO-126 package and is a Pb-free device, making it environmentally friendly. It is often used as a complement to the BD135, BD137, and BD139 NPN transistors.

Key Specifications

Parameter Symbol Max Unit Description
Collector-Base Voltage VCBO -45 V Maximum collector-base voltage
Collector-Emitter Voltage VCEO -45 V Maximum collector-emitter voltage
Emitter-Base Voltage VEBO -5 V Maximum emitter-base voltage
Collector Current (DC) IC -1.5 A Maximum continuous collector current
Collector Current (Pulse) ICP -3.0 A Maximum pulsed collector current
Base Current IB -0.5 A Maximum base current
DC Current Gain (hFE) hFE 40 to 250 Typical DC current gain at different collector currents
Collector-Emitter Saturation Voltage VCE(sat) -0.5 V Saturation voltage at specified collector and base currents
Base-Emitter ON Voltage VBE(on) -1 V Base-emitter voltage at specified collector current
Junction Temperature TJ 150 °C Maximum junction temperature
Storage Temperature Range TSTG -55 to 150 °C Storage temperature range

Key Features

  • Medium power PNP transistor
  • High collector current of up to 1.5 A
  • High DC current gain (hFE) ranging from 40 to 250
  • Collector-emitter voltage (VCEO) of 45 V
  • Collector-base voltage (VCBO) of 45 V
  • Emitter-base breakdown voltage (VEBO) of 5 V
  • Available in TO-126 package
  • Pb-free device

Applications

  • Switching circuits
  • Amplification circuits
  • Audio amplifiers
  • Load driver circuits

Q & A

  1. What is the maximum collector current of the BD136 transistor?

    The maximum continuous collector current is 1.5 A, and the maximum pulsed collector current is 3.0 A.

  2. What is the typical DC current gain (hFE) of the BD136 transistor?

    The DC current gain (hFE) ranges from 40 to 250, depending on the collector current.

  3. What is the maximum collector-emitter voltage (VCEO) of the BD136 transistor?

    The maximum collector-emitter voltage (VCEO) is 45 V.

  4. What is the maximum base current (IB) of the BD136 transistor?

    The maximum base current (IB) is 0.5 A.

  5. What is the junction temperature range of the BD136 transistor?

    The junction temperature should not exceed 150 °C.

  6. What are the common applications of the BD136 transistor?

    Common applications include switching circuits, amplification circuits, audio amplifiers, and load driver circuits.

  7. Is the BD136 transistor Pb-free?
  8. What package type is the BD136 transistor available in?

    The BD136 transistor is available in the TO-126 package.

  9. What is the storage temperature range for the BD136 transistor?

    The storage temperature range is -55 to 150 °C.

  10. Can the BD136 transistor be used in high-power applications?

    The BD136 is a medium power transistor and can handle moderate to heavy loads, but it is not suited for very high-power applications).

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):1.5 A
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 150mA, 2V
Power - Max:1.25 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:TO-126-3
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Similar Products

Part Number BD1366S BD1396S BD1376S BD1386S BD1356S BD13616S
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Active
Transistor Type PNP NPN NPN PNP NPN PNP
Current - Collector (Ic) (Max) 1.5 A 1.5 A 1.5 A 1.5 A 1.5 A 1.5 A
Voltage - Collector Emitter Breakdown (Max) 45 V 80 V 60 V 60 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V 100 @ 150mA, 2V
Power - Max 1.25 W 1.25 W 1.25 W 1.25 W 1.25 W 1.25 W
Frequency - Transition - - - - - -
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package TO-126-3 TO-126-3 TO-126-3 TO-126-3 TO-126-3 TO-126-3

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