BD14010STU
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onsemi BD14010STU

Manufacturer No:
BD14010STU
Manufacturer:
onsemi
Package:
Tube
Description:
TRANS PNP 80V 1.5A TO126-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BD14010STU is a PNP Epitaxial Silicon Transistor manufactured by onsemi. It is part of the BD136, BD138, and BD140 series, which are designed for medium power linear and switching applications. This transistor is known for its robust performance and reliability, making it suitable for a variety of electronic circuits.

Key Specifications

Parameter Value Unit
Collector-Base Voltage (VCBO) -80 V
Collector-Emitter Voltage (VCEO) -80 V
Emitter-Base Voltage (VEBO) -5 V
Collector Current (DC) (IC) -1.5 A
Collector Current (Pulse) (IC) -3.0 A
Base Current (IB) -0.5 A
Collector Dissipation (PC) 1.25 W
Junction Temperature (TJ) 150 °C
Storage Temperature (TSTG) -55 to +150 °C
DC Current Gain (hFE) at VCE = -2 V, IC = -150 mA 40 ~ 250
Collector-Emitter Saturation Voltage (VCE(sat)) at IC = -500 mA, IB = -50 mA -0.5 V
Base-Emitter On Voltage (VBE(on)) at VCE = -2 V, IC = -0.5 A -1 V
Package TO-126 3L
Packing Method Rail

Key Features

  • Complement to BD135, BD137, and BD139 respectively.
  • PNP Epitaxial Silicon Transistor suitable for medium power linear and switching applications.
  • High collector current and collector-emitter voltage ratings.
  • Low collector-emitter saturation voltage.
  • Wide range of DC current gain (hFE).
  • TO-126 3L package for through-hole mounting.

Applications

  • Medium power linear amplifiers.
  • Switching circuits.
  • General-purpose transistor applications requiring medium power handling.

Q & A

  1. What is the collector-emitter voltage rating of the BD14010STU?

    The collector-emitter voltage rating of the BD14010STU is -80 V.

  2. What is the maximum collector current for the BD14010STU?

    The maximum collector current (DC) for the BD14010STU is -1.5 A, and the maximum collector current (pulse) is -3.0 A.

  3. What is the junction temperature range for the BD14010STU?

    The junction temperature range for the BD14010STU is up to 150°C.

  4. What is the storage temperature range for the BD14010STU?

    The storage temperature range for the BD14010STU is -55 to +150°C.

  5. What package type does the BD14010STU use?

    The BD14010STU uses the TO-126 3L package.

  6. What is the typical DC current gain (hFE) for the BD14010STU?

    The typical DC current gain (hFE) for the BD14010STU at VCE = -2 V, IC = -150 mA is 40 ~ 250.

  7. What is the collector-emitter saturation voltage for the BD14010STU?

    The collector-emitter saturation voltage (VCE(sat)) for the BD14010STU at IC = -500 mA, IB = -50 mA is -0.5 V.

  8. What are the common applications of the BD14010STU?

    The BD14010STU is commonly used in medium power linear amplifiers and switching circuits.

  9. Is the BD14010STU suitable for high-frequency applications?

    The BD14010STU is generally suited for medium power applications and may not be the best choice for high-frequency applications due to its characteristics.

  10. How should I handle the BD14010STU to avoid damage?

    Avoid stressing the device beyond its absolute maximum ratings, and ensure it is operated within the recommended operating conditions to maintain reliability.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):1.5 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:63 @ 150mA, 2V
Power - Max:1.25 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:TO-126-3
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Same Series
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BD1386S
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BD1406S
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Similar Products

Part Number BD14010STU BD14016STU BD18010STU
Manufacturer onsemi onsemi onsemi
Product Status Active Active Obsolete
Transistor Type PNP PNP PNP
Current - Collector (Ic) (Max) 1.5 A 1.5 A 3 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 800mV @ 100mA, 1A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA, 2V 100 @ 150mA, 2V 63 @ 150mA, 2V
Power - Max 1.25 W 1.25 W 30 W
Frequency - Transition - - 3MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package TO-126-3 TO-126-3 TO-126-3

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