Overview
The BD1406S is a PNP epitaxial silicon transistor produced by ON Semiconductor. This transistor is part of the BD136, BD138, and BD140 series, which are designed for medium power linear and switching applications. The BD1406S is packaged in a TO-126 3L case and is available in bulk or rail packing methods.
It is important to note that the BD140 series is now obsolete and not in production, but the datasheet remains available for reference purposes.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Base Voltage (VCBO) | -80 | V |
| Collector-Emitter Voltage (VCEO) | -80 | V |
| Emitter-Base Voltage (VEBO) | -5 | V |
| Collector Current (DC) (IC) | -1.5 | A |
| Collector Current (Pulse) (IC) | -3.0 | A |
| Base Current (IB) | -0.5 | A |
| Collector Dissipation (PC) at TC = 25°C | 12.5 | W |
| Junction Temperature (TJ) | 150 | °C |
| Storage Temperature (TSTG) | -55 to +150 | °C |
| DC Current Gain (hFE) at VCE = -2 V, IC = -150 mA | 40 to 250 | |
| Collector-Emitter Saturation Voltage (VCE(sat)) at IC = -500 mA, IB = -50 mA | -0.5 | V |
| Base-Emitter On Voltage (VBE(on)) at VCE = -2 V, IC = -0.5 A | -1 | V |
Key Features
- PNP epitaxial silicon transistor
- Complement to BD135, BD137, and BD139 respectively
- Medium power linear and switching applications
- High collector current capability up to -1.5 A (DC) and -3.0 A (pulse)
- High collector dissipation up to 12.5 W at TC = 25°C
- Wide operating temperature range from -55°C to 150°C
- Available in TO-126 3L package
Applications
The BD1406S transistor is suitable for a variety of medium power applications, including:
- Linear amplifiers
- Switching circuits
- Power supplies
- Audio amplifiers
- General-purpose amplification and switching
Q & A
- What is the collector-base voltage rating for the BD1406S transistor?
The collector-base voltage (VCBO) for the BD1406S is -80 V.
- What is the maximum collector current for the BD1406S transistor?
The maximum collector current (IC) for the BD1406S is -1.5 A (DC) and -3.0 A (pulse).
- What is the junction temperature rating for the BD1406S transistor?
The junction temperature (TJ) for the BD1406S is 150°C.
- What is the storage temperature range for the BD1406S transistor?
The storage temperature range (TSTG) for the BD1406S is -55°C to +150°C.
- What are the typical applications for the BD1406S transistor?
The BD1406S is typically used in medium power linear and switching applications, including linear amplifiers, switching circuits, power supplies, and audio amplifiers.
- Is the BD1406S transistor still in production?
No, the BD140 series, including the BD1406S, is now obsolete and not in production.
- What package type is the BD1406S transistor available in?
The BD1406S transistor is available in the TO-126 3L package.
- What is the collector dissipation for the BD1406S transistor at TC = 25°C?
The collector dissipation (PC) at TC = 25°C for the BD1406S is 12.5 W.
- What is the base-emitter on voltage for the BD1406S transistor?
The base-emitter on voltage (VBE(on)) for the BD1406S at VCE = -2 V, IC = -0.5 A is -1 V.
- What is the collector-emitter saturation voltage for the BD1406S transistor?
The collector-emitter saturation voltage (VCE(sat)) for the BD1406S at IC = -500 mA, IB = -50 mA is -0.5 V.
