BD1386S
  • Share:

onsemi BD1386S

Manufacturer No:
BD1386S
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS PNP 60V 1.5A TO126-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BD1386S is a PNP epitaxial silicon transistor manufactured by onsemi. This transistor is part of the BD136, BD138, and BD140 series, known for their robust performance and versatility in various electronic applications. The BD1386S is particularly noted for its high current handling capability and reliability, making it a popular choice for power amplification and switching circuits.

Key Specifications

ParameterValueUnit
Transistor TypePNP
Current - Collector (Ic) (Max)1.5A
Voltage - Collector Emitter Breakdown (Max)60V
Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
Collector-Base Voltage (VCBO)-60V
Collector-Emitter Voltage (VCEO)-60V
Emitter-Base Voltage (VEBO)-5V
Base Current (IB)-0.5A
Junction Temperature (TJ)150°C
Storage Temperature Range (TSTG)-55 to 150°C
Collector Dissipation (PC)12.5W
Mounting TypeThrough Hole

Key Features

  • High current handling capability up to 1.5 A.
  • High collector-emitter voltage rating of 60 V.
  • Low collector-emitter saturation voltage of 500 mV.
  • Wide operating temperature range from -55°C to 150°C.
  • Pb-free and RoHS compliant.
  • Through-hole mounting for ease of use in various applications.

Applications

The BD1386S transistor is suitable for a variety of applications, including power amplification, switching circuits, and general-purpose amplification. It is commonly used in audio amplifiers, power supplies, and other electronic devices that require reliable and efficient transistor performance.

Q & A

  1. What is the maximum collector current of the BD1386S transistor?
    The maximum collector current is 1.5 A.
  2. What is the maximum collector-emitter voltage of the BD1386S transistor?
    The maximum collector-emitter voltage is 60 V.
  3. What is the typical collector-emitter saturation voltage of the BD1386S transistor?
    The typical collector-emitter saturation voltage is 500 mV.
  4. What is the junction temperature range of the BD1386S transistor?
    The junction temperature range is up to 150°C.
  5. Is the BD1386S transistor Pb-free and RoHS compliant?
    Yes, the BD1386S transistor is Pb-free and RoHS compliant.
  6. What type of mounting does the BD1386S transistor use?
    The BD1386S transistor uses through-hole mounting.
  7. What are some common applications of the BD1386S transistor?
    Common applications include power amplification, switching circuits, and general-purpose amplification in devices such as audio amplifiers and power supplies.
  8. What is the storage temperature range for the BD1386S transistor?
    The storage temperature range is from -55°C to 150°C.
  9. What is the maximum base current for the BD1386S transistor?
    The maximum base current is 0.5 A.
  10. Is the BD1386S transistor suitable for high-power applications?
    Yes, the BD1386S transistor is suitable for high-power applications due to its high current and voltage ratings.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):1.5 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 150mA, 2V
Power - Max:1.25 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:TO-126-3
0 Remaining View Similar

In Stock

-
176

Please send RFQ , we will respond immediately.

Same Series
BD14010STU
BD14010STU
TRANS PNP 80V 1.5A TO126-3
BD13610STU
BD13610STU
TRANS PNP 45V 1.5A TO126-3
BD13816STU
BD13816STU
TRANS PNP 60V 1.5A TO126-3
BD14010S
BD14010S
TRANS PNP 80V 1.5A TO126-3
BD13616S
BD13616S
TRANS PNP 45V 1.5A TO126-3
BD14016S
BD14016S
TRANS PNP 80V 1.5A TO126-3
BD13616STU
BD13616STU
TRANS PNP 45V 1.5A TO126-3
BD13816S
BD13816S
TRANS PNP 60V 1.5A TO126-3
BD13810S
BD13810S
TRANS PNP 60V 1.5A TO126-3
BD1386STU
BD1386STU
TRANS PNP 60V 1.5A TO126-3
BD1406S
BD1406S
TRANS PNP 80V 1.5A TO126-3
BD1406STU
BD1406STU
TRANS PNP 80V 1.5A TO126-3

Similar Products

Part Number BD1386S BD1396S BD1356S BD1366S BD1376S BD13816S
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
Transistor Type PNP NPN NPN PNP NPN PNP
Current - Collector (Ic) (Max) 1.5 A 1.5 A 1.5 A 1.5 A 1.5 A 1.5 A
Voltage - Collector Emitter Breakdown (Max) 60 V 80 V 45 V 45 V 60 V 60 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V 100 @ 150mA, 2V
Power - Max 1.25 W 1.25 W 1.25 W 1.25 W 1.25 W 1.25 W
Frequency - Transition - - - - - -
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package TO-126-3 TO-126-3 TO-126-3 TO-126-3 TO-126-3 TO-126-3

Related Product By Categories

BC817-25
BC817-25
Diotec Semiconductor
TRANS NPN 45V 0.8A SOT23-3
MMBT3904-7-F
MMBT3904-7-F
Diodes Incorporated
TRANS NPN 40V 0.2A SOT23-3
NSV1C201MZ4T1G
NSV1C201MZ4T1G
onsemi
TRANS NPN 100V 2A SOT223
BC817K-40WE6327
BC817K-40WE6327
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
MMBT2484
MMBT2484
Fairchild Semiconductor
TRANS NPN 60V 0.1A SOT23-3
BLF278
BLF278
Ampleon USA Inc.
RF PFET, 2-ELEMENT, VERY HIGH FR
BC817K-40HR
BC817K-40HR
Nexperia USA Inc.
TRANS NPN 45V 0.5A TO236AB
BD1366STU
BD1366STU
onsemi
TRANS PNP 45V 1.5A TO126-3
BC856BWE6327BTSA1
BC856BWE6327BTSA1
Infineon Technologies
TRANS PNP 65V 0.1A SOT323
BCP5610E6327HTSA1
BCP5610E6327HTSA1
Infineon Technologies
TRANS NPN 80V 1A SOT223-4
BC857CW/DG/B4F
BC857CW/DG/B4F
Nexperia USA Inc.
TRANS PNP 45V 0.1A SC70
SS8050-D-AP
SS8050-D-AP
Micro Commercial Co
TRANS NPN 25V 1.5A TO92

Related Product By Brand

MBRAF440T3G
MBRAF440T3G
onsemi
DIODE SCHOTTKY 40V 4A SMA-FL
MPSA42G
MPSA42G
onsemi
TRANS NPN 300V 0.5A TO92
2N7002LT3
2N7002LT3
onsemi
MOSFET N-CH 60V 115MA SOT23-3
FDD2572-F085
FDD2572-F085
onsemi
MOSFET N-CH 150V 4A/29A TO252AA
NVMFS5C410NLWFT3G
NVMFS5C410NLWFT3G
onsemi
MOSFET N-CH 40V 48A/315A 5DFN
ISL9V5036S3ST_SB82026C
ISL9V5036S3ST_SB82026C
onsemi
INTEGRATED CIRCUIT
NL27WZ08USG
NL27WZ08USG
onsemi
IC GATE AND 2CH 2-INP US8
CAT24C02YI-GT3JN
CAT24C02YI-GT3JN
onsemi
IC EEPROM 2KBIT I2C 8TSSOP
NIS5420MT4TXG
NIS5420MT4TXG
onsemi
ELECTRONIC FUSE (EFUSE), 12V, 44
LB1936V-TLM-E
LB1936V-TLM-E
onsemi
IC MTR DRV BIPLR 2.5-9.5V 16SSOP
NCP1593AMNTWG
NCP1593AMNTWG
onsemi
IC REG BUCK ADJUSTABLE 3A 10DFN
NCV8170AMX280TCG
NCV8170AMX280TCG
onsemi
IC REG LINEAR 2.8V 150MA 4XDFN