BD1386S
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onsemi BD1386S

Manufacturer No:
BD1386S
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS PNP 60V 1.5A TO126-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BD1386S is a PNP epitaxial silicon transistor manufactured by onsemi. This transistor is part of the BD136, BD138, and BD140 series, known for their robust performance and versatility in various electronic applications. The BD1386S is particularly noted for its high current handling capability and reliability, making it a popular choice for power amplification and switching circuits.

Key Specifications

ParameterValueUnit
Transistor TypePNP
Current - Collector (Ic) (Max)1.5A
Voltage - Collector Emitter Breakdown (Max)60V
Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
Collector-Base Voltage (VCBO)-60V
Collector-Emitter Voltage (VCEO)-60V
Emitter-Base Voltage (VEBO)-5V
Base Current (IB)-0.5A
Junction Temperature (TJ)150°C
Storage Temperature Range (TSTG)-55 to 150°C
Collector Dissipation (PC)12.5W
Mounting TypeThrough Hole

Key Features

  • High current handling capability up to 1.5 A.
  • High collector-emitter voltage rating of 60 V.
  • Low collector-emitter saturation voltage of 500 mV.
  • Wide operating temperature range from -55°C to 150°C.
  • Pb-free and RoHS compliant.
  • Through-hole mounting for ease of use in various applications.

Applications

The BD1386S transistor is suitable for a variety of applications, including power amplification, switching circuits, and general-purpose amplification. It is commonly used in audio amplifiers, power supplies, and other electronic devices that require reliable and efficient transistor performance.

Q & A

  1. What is the maximum collector current of the BD1386S transistor?
    The maximum collector current is 1.5 A.
  2. What is the maximum collector-emitter voltage of the BD1386S transistor?
    The maximum collector-emitter voltage is 60 V.
  3. What is the typical collector-emitter saturation voltage of the BD1386S transistor?
    The typical collector-emitter saturation voltage is 500 mV.
  4. What is the junction temperature range of the BD1386S transistor?
    The junction temperature range is up to 150°C.
  5. Is the BD1386S transistor Pb-free and RoHS compliant?
    Yes, the BD1386S transistor is Pb-free and RoHS compliant.
  6. What type of mounting does the BD1386S transistor use?
    The BD1386S transistor uses through-hole mounting.
  7. What are some common applications of the BD1386S transistor?
    Common applications include power amplification, switching circuits, and general-purpose amplification in devices such as audio amplifiers and power supplies.
  8. What is the storage temperature range for the BD1386S transistor?
    The storage temperature range is from -55°C to 150°C.
  9. What is the maximum base current for the BD1386S transistor?
    The maximum base current is 0.5 A.
  10. Is the BD1386S transistor suitable for high-power applications?
    Yes, the BD1386S transistor is suitable for high-power applications due to its high current and voltage ratings.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):1.5 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 150mA, 2V
Power - Max:1.25 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:TO-126-3
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Similar Products

Part Number BD1386S BD1396S BD1356S BD1366S BD1376S BD13816S
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
Transistor Type PNP NPN NPN PNP NPN PNP
Current - Collector (Ic) (Max) 1.5 A 1.5 A 1.5 A 1.5 A 1.5 A 1.5 A
Voltage - Collector Emitter Breakdown (Max) 60 V 80 V 45 V 45 V 60 V 60 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V 100 @ 150mA, 2V
Power - Max 1.25 W 1.25 W 1.25 W 1.25 W 1.25 W 1.25 W
Frequency - Transition - - - - - -
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package TO-126-3 TO-126-3 TO-126-3 TO-126-3 TO-126-3 TO-126-3

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