BD13616STU
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onsemi BD13616STU

Manufacturer No:
BD13616STU
Manufacturer:
onsemi
Package:
Tube
Description:
TRANS PNP 45V 1.5A TO126-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BD13616STU is a PNP epitaxial silicon transistor produced by onsemi. It is part of the BD136 series, which includes the BD136, BD138, and BD140 models. This transistor is designed to be a complement to the BD135, BD137, and BD139 series, respectively. The BD13616STU is a Pb-free device, making it environmentally friendly and compliant with current regulations.

This transistor is housed in a TO-126 package and is available in various shipping configurations, including tubes and bulk boxes. It is suitable for a wide range of applications due to its robust electrical and thermal characteristics.

Key Specifications

Rating Symbol Max Unit Value
Collector-Base Voltage VCBO V -45
Collector-Emitter Voltage VCEO V -45
Emitter-Base Voltage VEBO V -5
Collector Current (DC) IC A -1.5
Collector Current (Pulse) ICP A -3.0
Base Current IB A -0.5
Collector Dissipation PC W 12.5
Collector Dissipation (TA = 25°C) PC W 1.25
Junction Temperature TJ °C 150
Storage Temperature Range TSTG °C -55 to 150
DC Current Gain (hFE1) hFE1 25 (Min), 100 (Typ), 250 (Max)
Collector-Emitter Saturation Voltage VCE(sat) V -0.5
Base-Emitter ON Voltage VBE(on) V -1

Key Features

  • Pb-free Device: Compliant with environmental regulations, making it suitable for modern electronic designs.
  • High Current Handling: Capable of handling collector currents up to 1.5 A (DC) and 3.0 A (pulse).
  • Robust Voltage Ratings: Collector-base voltage up to -45 V, collector-emitter voltage up to -45 V, and emitter-base voltage up to -5 V.
  • High Junction Temperature: Can operate up to a junction temperature of 150°C.
  • Wide Storage Temperature Range: Storage temperature range from -55°C to 150°C.
  • TO-126 Package: Standard package that is widely used and recognized in the industry.

Applications

  • General Purpose Amplification: Suitable for various amplification tasks in electronic circuits.
  • Switching Circuits: Can be used in switching applications due to its high current handling and low saturation voltage.
  • Power Supplies: Used in power supply circuits for voltage regulation and current limiting.
  • Audio and Video Equipment: Applicable in audio and video amplifiers and other consumer electronics.
  • Automotive Electronics: Can be used in automotive systems due to its robust thermal and electrical characteristics.

Q & A

  1. What is the maximum collector current for the BD13616STU?

    The maximum collector current (DC) is -1.5 A, and the maximum collector current (pulse) is -3.0 A.

  2. What is the maximum junction temperature for this transistor?

    The maximum junction temperature is 150°C.

  3. Is the BD13616STU Pb-free?
  4. What is the collector-emitter saturation voltage for this transistor?

    The collector-emitter saturation voltage (VCE(sat)) is -0.5 V.

  5. What is the base-emitter ON voltage for this transistor?

    The base-emitter ON voltage (VBE(on)) is -1 V.

  6. What are the typical applications of the BD13616STU?

    It is used in general purpose amplification, switching circuits, power supplies, audio and video equipment, and automotive electronics.

  7. What is the storage temperature range for the BD13616STU?

    The storage temperature range is from -55°C to 150°C.

  8. What package type does the BD13616STU come in?

    The BD13616STU comes in a TO-126 package.

  9. What is the maximum collector dissipation for this transistor?

    The maximum collector dissipation is 12.5 W, and at TA = 25°C, it is 1.25 W.

  10. Is the BD13616STU suitable for use in life support systems or medical devices?

    No, the BD13616STU is not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):1.5 A
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 2V
Power - Max:1.25 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:TO-126-3
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$0.67
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Similar Products

Part Number BD13616STU BD13916STU BD13816STU BD13716STU BD1366STU BD13516STU BD13610STU
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Obsolete Active Active
Transistor Type PNP NPN PNP NPN PNP NPN PNP
Current - Collector (Ic) (Max) 1.5 A 1.5 A 1.5 A 1.5 A 1.5 A 1.5 A 1.5 A
Voltage - Collector Emitter Breakdown (Max) 45 V 80 V 60 V 60 V 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 40 @ 150mA, 2V 100 @ 150mA, 2V 63 @ 150mA, 2V
Power - Max 1.25 W 1.25 W 1.25 W 1.25 W 1.25 W 1.25 W 1.25 W
Frequency - Transition - - - - - - -
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package TO-126-3 TO-126-3 TO-126-3 TO-126-3 TO-126-3 TO-126-3 TO-126-3

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