BD13916STU
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onsemi BD13916STU

Manufacturer No:
BD13916STU
Manufacturer:
onsemi
Package:
Tube
Description:
TRANS NPN 80V 1.5A TO126-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BD13916STU is an NPN epitaxial silicon transistor produced by onsemi. It is part of the BD135, BD137, and BD139 series, which are designed for medium power linear and switching applications. This transistor is housed in a TO-126 package and is known for its robust performance and reliability.

Key Specifications

ParameterValueUnits
Collector-Base Voltage (VCBO)80V
Collector-Emitter Voltage (VCEO)80V
Emitter-Base Voltage (VEBO)5V
Collector Current (DC) (IC)1.5A
Collector Current (Pulse) (ICP)3.0A
Base Current (IB)0.5A
Device Dissipation (PC) at TC = 25°C12.5W
Junction Temperature (TJ)150°C
Storage Temperature (TSTG)-55 to +150°C
DC Current Gain (hFE)40 ~ 250
Collector-Emitter Saturation Voltage (VCE(sat))0.5V
Base-Emitter On Voltage (VBE(on))1V

Key Features

  • Complement to BD136, BD138, and BD140 respectively.
  • Medium power linear and switching capabilities.
  • High collector current and voltage ratings.
  • Low collector-emitter saturation voltage.
  • Wide range of DC current gain.
  • TO-126 package for through-hole mounting.

Applications

The BD13916STU is suitable for a variety of applications, including:

  • Medium power linear amplifiers.
  • Switching circuits.
  • General-purpose transistor applications requiring high current and voltage handling.

Q & A

  1. What is the maximum collector-emitter voltage of the BD13916STU?
    The maximum collector-emitter voltage (VCEO) is 80 V.
  2. What is the maximum collector current of the BD13916STU?
    The maximum DC collector current (IC) is 1.5 A.
  3. What is the package type of the BD13916STU?
    The BD13916STU is housed in a TO-126 package.
  4. What are the typical applications of the BD13916STU?
    The BD13916STU is used in medium power linear and switching applications.
  5. What is the junction temperature range of the BD13916STU?
    The junction temperature (TJ) range is up to 150°C.
  6. What is the storage temperature range of the BD13916STU?
    The storage temperature (TSTG) range is -55 to +150°C.
  7. What is the collector-emitter saturation voltage of the BD13916STU?
    The collector-emitter saturation voltage (VCE(sat)) is 0.5 V.
  8. What is the base-emitter on voltage of the BD13916STU?
    The base-emitter on voltage (VBE(on)) is 1 V.
  9. Is the BD13916STU suitable for life support systems or medical devices?
    No, the BD13916STU is not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices.
  10. What is the DC current gain range of the BD13916STU?
    The DC current gain (hFE) range is 40 ~ 250.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1.5 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 2V
Power - Max:1.25 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:TO-126-3
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$0.66
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Similar Products

Part Number BD13916STU BD1396STU BD13516STU BD13616STU BD13716STU BD13816STU BD13910STU
Manufacturer onsemi Fairchild Semiconductor onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active Active
Transistor Type NPN NPN NPN PNP NPN PNP NPN
Current - Collector (Ic) (Max) 1.5 A 1.5 A 1.5 A 1.5 A 1.5 A 1.5 A 1.5 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 45 V 45 V 60 V 60 V 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V 40 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 63 @ 150mA, 2V
Power - Max 1.25 W 1.25 W 1.25 W 1.25 W 1.25 W 1.25 W 1.25 W
Frequency - Transition - - - - - - -
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package TO-126-3 TO-126-3 TO-126-3 TO-126-3 TO-126-3 TO-126-3 TO-126-3

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