BD1396STU
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Fairchild Semiconductor BD1396STU

Manufacturer No:
BD1396STU
Manufacturer:
Fairchild Semiconductor
Package:
Bulk
Description:
TRANS NPN 80V 1.5A TO126-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BD1396STU is a bipolar junction transistor (BJT) manufactured by Fairchild Semiconductor. It is an NPN type transistor, known for its reliability and performance in various electronic applications. This transistor is part of the BD139 series, which is widely used in general-purpose applications due to its robust specifications and versatility.

Key Specifications

Parameter Value
Transistor Type NPN
Collector-Base Voltage (Vcb) 80 V
Collector-Emitter Voltage (Vce) 80 V
Collector Current (Ic) 1.5 A
Power Dissipation (Pd) 1.25 W
Vce Saturation (Vce(sat)) 500 mV @ 50 mA, 500 mA
DC Current Gain (hFE) 40 @ 150 mA, 2 V
Collector Cutoff Current (Icbo) 100 nA
Operating Temperature (Tj) -55°C to 150°C
Package TO-126-3
Mounting Type Through Hole

Key Features

  • High Collector Current: The BD1396STU can handle a collector current of up to 1.5 A, making it suitable for applications requiring moderate to high current levels.
  • High Voltage Capability: With a collector-emitter voltage of 80 V, this transistor is robust and can handle high voltage applications.
  • Low Vce Saturation: The transistor has a low Vce saturation voltage of 500 mV, which helps in reducing power losses and improving efficiency.
  • High DC Current Gain: A minimum DC current gain of 40 ensures reliable amplification and switching performance.
  • Wide Operating Temperature Range: The transistor operates over a temperature range of -55°C to 150°C, making it suitable for a variety of environmental conditions.
  • Through Hole Package: The TO-126-3 package is easy to mount and suitable for various PCB designs.

Applications

  • General Purpose Amplification: The BD1396STU is widely used in general-purpose amplifier circuits due to its balanced current and voltage specifications.
  • Switching Circuits: Its high current gain and low Vce saturation make it suitable for switching applications such as power supplies, motor control, and relay drivers.
  • Audio Amplifiers: The transistor can be used in audio amplifier circuits where moderate power and high fidelity are required.
  • Automotive Electronics: The wide operating temperature range and robust specifications make it a good choice for automotive electronic systems.
  • Industrial Control Systems: It can be used in various industrial control systems that require reliable and efficient transistor performance.

Q & A

  1. What is the collector current rating of the BD1396STU transistor?

    The collector current rating of the BD1396STU transistor is 1.5 A.

  2. What is the maximum collector-emitter voltage for the BD1396STU?

    The maximum collector-emitter voltage for the BD1396STU is 80 V.

  3. What is the power dissipation capacity of the BD1396STU?

    The power dissipation capacity of the BD1396STU is 1.25 W.

  4. What is the typical DC current gain (hFE) of the BD1396STU?

    The typical DC current gain (hFE) of the BD1396STU is 40 at 150 mA and 2 V.

  5. What is the operating temperature range for the BD1396STU?

    The operating temperature range for the BD1396STU is -55°C to 150°C.

  6. What type of package does the BD1396STU come in?

    The BD1396STU comes in a TO-126-3 package.

  7. Is the BD1396STU suitable for high-frequency applications?

    The BD1396STU is not specifically designed for high-frequency applications but can be used in moderate frequency circuits.

  8. Is the BD1396STU RoHS compliant?

    Yes, the BD1396STU is RoHS compliant.

  9. What are some common applications of the BD1396STU transistor?

    The BD1396STU is commonly used in general-purpose amplification, switching circuits, audio amplifiers, automotive electronics, and industrial control systems.

  10. How does the BD1396STU handle high voltage applications?

    The BD1396STU can handle high voltage applications due to its 80 V collector-emitter voltage rating, making it robust and reliable for such uses.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1.5 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 150mA, 2V
Power - Max:1.25 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:TO-126-3
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Similar Products

Part Number BD1396STU BD1356STU BD1366STU BD1376STU BD1386STU BD13916STU
Manufacturer Fairchild Semiconductor onsemi onsemi onsemi onsemi onsemi
Product Status Active Obsolete Obsolete Obsolete Obsolete Active
Transistor Type NPN NPN PNP NPN PNP NPN
Current - Collector (Ic) (Max) 1.5 A 1.5 A 1.5 A 1.5 A 1.5 A 1.5 A
Voltage - Collector Emitter Breakdown (Max) 80 V 45 V 45 V 60 V 60 V 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V 100 @ 150mA, 2V
Power - Max 1.25 W 1.25 W 1.25 W 1.25 W 1.25 W 1.25 W
Frequency - Transition - - - - - -
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package TO-126-3 TO-126-3 TO-126-3 TO-126-3 TO-126-3 TO-126-3

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