Overview
The BD13910STU is an NPN epitaxial silicon transistor produced by onsemi. This transistor is part of the BD135, BD137, and BD139 series, which are designed for medium power linear and switching applications. The BD13910STU is packaged in a TO-126-3 through-hole configuration, making it suitable for a variety of electronic circuits.
Key Specifications
| Parameter | Value | Units |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | 80 | V |
| Collector-Base Voltage (VCBO) | 80 | V |
| Emitter-Base Voltage (VEBO) | 5 | V |
| Collector Current (IC) | 1.5 | A |
| Pulse Collector Current (ICP) | 3.0 | A |
| Base Current (IB) | 0.5 | A |
| Device Dissipation (PC) at TC = 25°C | 12.5 | W |
| Junction Temperature (TJ) | 150 | °C |
| Storage Temperature (TSTG) | -55 to +150 | °C |
| DC Current Gain (hFE) at VCE = 2 V, IC = 0.5 A | 25 to 100 | |
| Collector-Emitter Saturation Voltage (VCE(sat)) at IC = 500 mA, IB = 50 mA | 0.5 | V |
| Base-Emitter On Voltage (VBE(on)) at VCE = 2 V, IC = 0.5 A | 1 | V |
Key Features
- Complement to BD136, BD138, and BD140 respectively.
- NPN epitaxial silicon transistor.
- Medium power linear and switching capabilities.
- TO-126-3 through-hole package.
- High collector-emitter voltage and current ratings.
- Low collector-emitter saturation voltage.
- Wide operating temperature range.
Applications
- Medium power linear amplifiers.
- Switching circuits.
- General-purpose amplification.
- Power supplies and regulators.
- Audio amplifiers.
Q & A
- What is the collector-emitter voltage rating of the BD13910STU?
The collector-emitter voltage (VCEO) rating is 80 V.
- What is the maximum collector current for the BD13910STU?
The maximum collector current (IC) is 1.5 A.
- What is the package type of the BD13910STU?
The BD13910STU is packaged in a TO-126-3 through-hole configuration.
- What are the typical applications of the BD13910STU?
Typical applications include medium power linear amplifiers, switching circuits, general-purpose amplification, power supplies, and audio amplifiers.
- What is the junction temperature range for the BD13910STU?
The junction temperature (TJ) range is up to 150°C.
- Is the BD13910STU suitable for high-frequency applications?
While it can be used in various applications, it is primarily designed for medium power linear and switching rather than high-frequency applications.
- What is the base-emitter on voltage for the BD13910STU?
The base-emitter on voltage (VBE(on)) is approximately 1 V at VCE = 2 V and IC = 0.5 A.
- Can the BD13910STU be used in life support systems or medical devices?
No, the BD13910STU is not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices.
- What is the storage temperature range for the BD13910STU?
The storage temperature (TSTG) range is -55°C to +150°C.
- What is the typical DC current gain (hFE) for the BD13910STU?
The typical DC current gain (hFE) at VCE = 2 V and IC = 0.5 A is between 25 to 100.
