Overview
The BD13510STU is a medium-power NPN epitaxial silicon transistor produced by onsemi. This transistor is part of the BD135, BD137, and BD139 series, each with different voltage ratings. The BD13510STU is specifically designed for medium power linear and switching applications. It is packaged in a TO-126 3L case, which is a standard package for medium-power transistors.
Key Specifications
| Parameter | Value | Units |
|---|---|---|
| Collector-Base Voltage (VCBO) | 45 | V |
| Collector-Emitter Voltage (VCEO) | 45 | V |
| Emitter-Base Voltage (VEBO) | 5 | V |
| Collector Current (DC) (IC) | 1.5 | A |
| Collector Current (Pulse) (ICP) | 3.0 | A |
| Base Current (IB) | 0.5 | A |
| Device Dissipation (PC) at TC = 25°C | 12.5 | W |
| Junction Temperature (TJ) | 150 | °C |
| Storage Temperature (TSTG) | -55 to +150 | °C |
| DC Current Gain (hFE) at VCE = 2 V, IC = 0.5 A | 25 - 100 | |
| Collector-Emitter Saturation Voltage (VCE(sat)) at IC = 500 mA, IB = 50 mA | 0.5 | V |
| Base-Emitter On Voltage (VBE(on)) at VCE = 2 V, IC = 0.5 A | 1 | V |
Key Features
- Complement to BD136, BD138, and BD140 respectively.
- Medium power NPN epitaxial silicon transistor.
- Available in TO-126 3L package.
- High DC current gain (hFE) with a range of 25 to 100.
- Low collector-emitter saturation voltage (VCE(sat)) of 0.5 V.
- Base-emitter on voltage (VBE(on)) of 1 V.
Applications
The BD13510STU is suitable for medium power linear and switching applications. It can be used in various electronic circuits such as amplifiers, switches, and power control systems. Its medium power handling capability makes it a versatile component for a wide range of electronic devices.
Q & A
- What is the collector-emitter voltage rating of the BD13510STU?
The collector-emitter voltage rating of the BD13510STU is 45 V. - What is the maximum collector current for the BD13510STU?
The maximum collector current (DC) for the BD13510STU is 1.5 A, and the maximum collector current (pulse) is 3.0 A. - What is the junction temperature of the BD13510STU?
The junction temperature of the BD13510STU is 150 °C. - What is the storage temperature range for the BD13510STU?
The storage temperature range for the BD13510STU is -55 to +150 °C. - What is the typical DC current gain (hFE) of the BD13510STU?
The typical DC current gain (hFE) of the BD13510STU at VCE = 2 V and IC = 0.5 A is between 25 and 100. - What is the collector-emitter saturation voltage (VCE(sat)) of the BD13510STU?
The collector-emitter saturation voltage (VCE(sat)) of the BD13510STU at IC = 500 mA and IB = 50 mA is 0.5 V. - What is the base-emitter on voltage (VBE(on)) of the BD13510STU?
The base-emitter on voltage (VBE(on)) of the BD13510STU at VCE = 2 V and IC = 0.5 A is 1 V. - In what package is the BD13510STU available?
The BD13510STU is available in the TO-126 3L package. - What are the typical applications of the BD13510STU?
The BD13510STU is typically used in medium power linear and switching applications. - Is the BD13510STU recommended for new designs?
No, the BD13510STU is not recommended for new designs as it has been discontinued by onsemi.
