BD13810STU
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onsemi BD13810STU

Manufacturer No:
BD13810STU
Manufacturer:
onsemi
Package:
Tube
Description:
TRANS PNP 60V 1.5A TO126-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BD13810STU is a medium-power PNP bipolar junction transistor manufactured by onsemi. This transistor is designed for use in various applications, including audio amplifiers and drivers, particularly in complementary or quasi-complementary circuits. It is part of the BD138 series, which is known for its reliability and performance in medium-power linear and switching applications. The device is lead-free, halogen-free, and RoHS compliant, ensuring environmental sustainability and regulatory compliance.

Key Specifications

Parameter Value Unit
Transistor Type PNP
Collector Current (Ic) Max 1.5 A
Collector-Emitter Voltage (Vceo) Max 60 V
Collector-Emitter Saturation Voltage (Vce(sat)) Max 0.5 V @ 50mA, 500mA
DC Current Gain (hFE) Min 63 @ Ic = 150mA, Vce = 2V
Power Dissipation (Pc) Max 1.25 W
Junction Temperature (Tj) Max 150 °C
Storage Temperature Range (Tstg) -55 to 150 °C
Package Type TO-126-3
Mounting Type Through Hole

Key Features

  • Medium Power Capability: The BD13810STU is designed to handle medium power applications, making it suitable for audio amplifiers and drivers.
  • Complementary Transistors: It is part of a series that includes complementary transistors such as BD135, BD137, and BD139, allowing for versatile circuit design.
  • Environmental Compliance: The device is lead-free, halogen-free, and RoHS compliant, ensuring it meets current environmental regulations.
  • High Current Gain: With a minimum DC current gain (hFE) of 63 at Ic = 150mA and Vce = 2V, it provides reliable amplification.
  • Low Saturation Voltage: The transistor has a low collector-emitter saturation voltage of 0.5V, which is beneficial for reducing power losses.

Applications

  • Audio Amplifiers: The BD13810STU is widely used in audio amplification circuits due to its medium power handling and low distortion characteristics.
  • Audio Drivers: It is suitable for driving audio signals in various audio equipment.
  • Linear and Switching Applications: The transistor can be used in both linear and switching applications, making it versatile for different circuit designs.

Q & A

  1. What is the maximum collector current of the BD13810STU?

    The maximum collector current (Ic) of the BD13810STU is 1.5 A.

  2. What is the collector-emitter voltage rating of the BD13810STU?

    The collector-emitter voltage (Vceo) rating of the BD13810STU is 60 V.

  3. What is the minimum DC current gain (hFE) of the BD13810STU?

    The minimum DC current gain (hFE) of the BD13810STU is 63 at Ic = 150mA and Vce = 2V.

  4. Is the BD13810STU RoHS compliant?
  5. What is the package type of the BD13810STU?

    The BD13810STU comes in a TO-126-3 package.

  6. What are the typical applications of the BD13810STU?

    The BD13810STU is typically used in audio amplifiers, audio drivers, and other medium power linear and switching applications.

  7. What is the maximum junction temperature of the BD13810STU?

    The maximum junction temperature (Tj) of the BD13810STU is 150°C.

  8. What is the power dissipation capability of the BD13810STU?

    The maximum power dissipation (Pc) of the BD13810STU is 1.25 W.

  9. Is the BD13810STU suitable for high-frequency applications?

    While it can be used in various applications, the BD13810STU is not specifically optimized for high-frequency applications.

  10. Can the BD13810STU be used in life support systems or medical devices?

    No, the BD13810STU is not designed or intended for use as a critical component in life support systems or any FDA Class 3 medical devices.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):1.5 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:63 @ 150mA, 2V
Power - Max:1.25 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:TO-126-3
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Similar Products

Part Number BD13810STU BD13910STU BD13816STU BD17810STU BD13510STU BD13610STU BD13710STU
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Obsolete Active Active Obsolete
Transistor Type PNP NPN PNP PNP NPN PNP NPN
Current - Collector (Ic) (Max) 1.5 A 1.5 A 1.5 A 3 A 1.5 A 1.5 A 1.5 A
Voltage - Collector Emitter Breakdown (Max) 60 V 80 V 60 V 60 V 45 V 45 V 60 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 800mV @ 100mA, 1A 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100µA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA, 2V 63 @ 150mA, 2V 100 @ 150mA, 2V 63 @ 150mA, 2V 63 @ 150mA, 2V 63 @ 150mA, 2V 63 @ 150mA, 2V
Power - Max 1.25 W 1.25 W 1.25 W 30 W 1.25 W 1.25 W 1.25 W
Frequency - Transition - - - 3MHz - - -
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package TO-126-3 TO-126-3 TO-126-3 TO-126-3 TO-126-3 TO-126-3 TO-126-3

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