Overview
The BD14016STU is a PNP epitaxial silicon transistor produced by ON Semiconductor. This transistor is part of the BD136, BD138, and BD140 series, which are designed for medium power linear and switching applications. The BD14016STU is housed in a TO-126 3L package and is available in rail packing. It is a complement to the BD135, BD137, and BD139 NPN transistors, respectively.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Base Voltage (VCBO) | -80 | V |
| Collector-Emitter Voltage (VCEO) | -80 | V |
| Emitter-Base Voltage (VEBO) | -5 | V |
| Collector Current (DC) (IC) | -1.5 | A |
| Collector Current (Pulse) (IC) | -3.0 | A |
| Base Current (IB) | -0.5 | A |
| Collector Dissipation (PC) at TC = 25°C | 12.5 | W |
| Junction Temperature (TJ) | 150 | °C |
| Storage Temperature (TSTG) | -55 to +150 | °C |
| DC Current Gain (hFE) at VCE = -2 V, IC = -0.5 A | 100 ~ 250 | |
| Collector-Emitter Saturation Voltage (VCE(sat)) at IC = -500 mA, IB = -50 mA | -0.5 | V |
| Base-Emitter On Voltage (VBE(on)) at VCE = -2 V, IC = -0.5 A | -1 | V |
Key Features
- PNP epitaxial silicon transistor suitable for medium power linear and switching applications.
- Complement to BD135, BD137, and BD139 NPN transistors.
- Housed in a TO-126 3L package.
- High collector current and collector dissipation capabilities.
- Wide range of DC current gain (hFE) for various application needs.
- Low collector-emitter saturation voltage (VCE(sat)).
Applications
- Medium power linear amplifiers.
- Switching circuits.
- General-purpose power amplification.
- Automotive and industrial control systems.
- Audio amplifiers and other electronic devices requiring medium power handling.
Q & A
- What is the BD14016STU transistor used for?
The BD14016STU is used for medium power linear and switching applications.
- What is the package type of the BD14016STU transistor?
The BD14016STU is housed in a TO-126 3L package.
- What is the maximum collector current for the BD14016STU transistor?
The maximum collector current (DC) is -1.5 A, and the maximum collector current (pulse) is -3.0 A.
- What is the maximum junction temperature for the BD14016STU transistor?
The maximum junction temperature is 150°C.
- What is the storage temperature range for the BD14016STU transistor?
The storage temperature range is -55 to +150°C.
- What are the typical applications of the BD14016STU transistor?
Typical applications include medium power linear amplifiers, switching circuits, general-purpose power amplification, automotive and industrial control systems, and audio amplifiers.
- Is the BD14016STU suitable for life support systems or medical devices?
No, the BD14016STU is not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices.
- What is the collector-emitter saturation voltage (VCE(sat)) for the BD14016STU transistor?
The collector-emitter saturation voltage (VCE(sat)) is -0.5 V at IC = -500 mA, IB = -50 mA.
- What is the base-emitter on voltage (VBE(on)) for the BD14016STU transistor?
The base-emitter on voltage (VBE(on)) is -1 V at VCE = -2 V, IC = -0.5 A.
- Can the BD14016STU be used in high-temperature environments?
The transistor can operate up to a junction temperature of 150°C, but it is important to ensure that the operating conditions do not exceed the recommended specifications.
- Where can I find the latest datasheet and product information for the BD14016STU transistor?
The latest datasheet and product information can be found on the ON Semiconductor website at www.onsemi.com.
