Overview
The BD13616S is a PNP epitaxial silicon transistor manufactured by onsemi. It is part of the BD136 series, which includes the BD136, BD138, and BD140 models. This transistor is designed for medium power linear and switching applications. It is a Pb-free device, making it compliant with current environmental regulations. The BD13616S is known for its robust performance and reliability, making it suitable for a variety of electronic circuits.
Key Specifications
| Rating | Symbol | Max Unit | Description |
|---|---|---|---|
| Collector-Base Voltage | VCBO | -45 V | Maximum collector-base voltage |
| Collector-Emitter Voltage | VCEO | -45 V | Maximum collector-emitter voltage |
| Emitter-Base Voltage | VEBO | -5 V | Maximum emitter-base voltage |
| Collector Current (DC) | IC | -1.5 A | Maximum continuous collector current |
| Collector Current (Pulse) | ICP | -3.0 A | Maximum pulsed collector current |
| Base Current | IB | -0.5 A | Maximum base current |
| Collector Dissipation | PC | 12.5 W | Maximum collector power dissipation |
| Junction Temperature | TJ | 150 °C | Maximum junction temperature |
| Storage Temperature Range | TSTG | -55 to 150 °C | Storage temperature range |
| DC Current Gain (hFE1) | hFE1 | 25 to 100 | DC current gain at VCE = -2 V, IC = -5 mA |
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.5 V | Saturation voltage at IC = 500 mA, IB = 50 mA |
| Base-Emitter ON Voltage | VBE(on) | -1 V | Base-emitter ON voltage at VCE = -2 V, IC = -0.5 A |
Key Features
- Pb-free Device: Compliant with environmental regulations.
- Medium Power Capability: Suitable for linear and switching applications.
- High Current Gain: DC current gain (hFE) ranges from 25 to 250 depending on the collector current.
- Low Saturation Voltage: Collector-emitter saturation voltage of -0.5 V at specified conditions.
- Wide Operating Temperature Range: Junction temperature up to 150 °C and storage temperature range from -55 to 150 °C.
- Robust Thermal Characteristics: Maximum collector power dissipation of 12.5 W.
Applications
- Linear Amplifiers: Suitable for use in medium power linear amplifier circuits.
- Switching Circuits: Can be used in switching applications due to its high current gain and low saturation voltage.
- Power Supplies: Can be utilized in power supply circuits requiring medium power handling.
- Automotive Electronics: Due to its robust thermal characteristics, it can be used in automotive electronic systems.
- Industrial Control Systems: Suitable for use in industrial control and automation systems.
Q & A
- What is the maximum collector-emitter voltage for the BD13616S transistor?
The maximum collector-emitter voltage (VCEO) for the BD13616S is -45 V.
- What is the maximum collector current for the BD13616S transistor?
The maximum continuous collector current (IC) is -1.5 A, and the maximum pulsed collector current (ICP) is -3.0 A.
- What is the typical DC current gain (hFE) for the BD13616S transistor?
The DC current gain (hFE) ranges from 25 to 100 depending on the collector current conditions.
- What is the collector-emitter saturation voltage for the BD13616S transistor?
The collector-emitter saturation voltage (VCE(sat)) is -0.5 V at IC = 500 mA and IB = 50 mA.
- What is the maximum junction temperature for the BD13616S transistor?
The maximum junction temperature (TJ) is 150 °C.
- Is the BD13616S transistor Pb-free?
Yes, the BD13616S is a Pb-free device, making it compliant with current environmental regulations.
- What are the typical applications for the BD13616S transistor?
The BD13616S is suitable for medium power linear and switching applications, including linear amplifiers, switching circuits, power supplies, automotive electronics, and industrial control systems.
- What is the storage temperature range for the BD13616S transistor?
The storage temperature range (TSTG) is from -55 to 150 °C.
- What is the maximum base current for the BD13616S transistor?
The maximum base current (IB) is -0.5 A.
- What is the maximum collector power dissipation for the BD13616S transistor?
The maximum collector power dissipation (PC) is 12.5 W.
