BD13916S
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onsemi BD13916S

Manufacturer No:
BD13916S
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS NPN 80V 1.5A TO126-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BD13916S is a plastic, NPN Power Bipolar Junction Transistor produced by onsemi. This transistor is designed for use in audio amplifiers and drivers, particularly in complementary or quasi-complementary circuits. It is part of the BD135, BD137, and BD139 series, which are complementary to the BD136, BD138, and BD140 series respectively. The BD13916S is known for its medium power linear and switching capabilities, making it suitable for a variety of audio and power applications.

Key Specifications

Parameter Value Unit
Collector-Base Voltage (VCBO) 80 V
Collector-Emitter Voltage (VCEO) 80 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 1.5 A
Collector Peak Current (ICM) 3 A
Base Current (IB) 0.5 A
Total Dissipation at Tc ≤ 25°C (PTOT) 12.5 W
Storage Temperature (Tstg) -55 to +150 °C
Maximum Operating Junction Temperature (Tj) 150 °C
Collector-Emitter Saturation Voltage (VCE(sat)) 0.5 V
Base-Emitter On Voltage (VBE(on)) 1 V
DC Current Gain (hFE) 25 to 250

Key Features

  • Designed for use in audio amplifiers and drivers utilizing complementary or quasi-complementary circuits.
  • Medium power linear and switching capabilities.
  • Complementary to BD136, BD138, and BD140 series.
  • Pb-Free, Halogen Free/BFR Free and RoHS Compliant.
  • Available in TO-126 package type.

Applications

  • Audio amplification and drivers.
  • Medium power linear and switching applications.
  • General purpose power amplifiers.

Q & A

  1. What is the maximum collector current of the BD13916S?

    The maximum collector current (IC) of the BD13916S is 1.5 A.

  2. What is the collector-emitter voltage rating of the BD13916S?

    The collector-emitter voltage (VCEO) rating of the BD13916S is 80 V.

  3. What is the base-emitter voltage of the BD13916S?

    The base-emitter on voltage (VBE(on)) of the BD13916S is 1 V.

  4. What is the maximum operating junction temperature of the BD13916S?

    The maximum operating junction temperature (Tj) of the BD13916S is 150°C.

  5. Is the BD13916S RoHS compliant?
  6. What package type is the BD13916S available in?

    The BD13916S is available in the TO-126 package type.

  7. What are the typical applications of the BD13916S?

    The BD13916S is typically used in audio amplification, medium power linear and switching applications, and general purpose power amplifiers.

  8. What is the collector-emitter saturation voltage of the BD13916S?

    The collector-emitter saturation voltage (VCE(sat)) of the BD13916S is 0.5 V.

  9. What is the DC current gain range of the BD13916S?

    The DC current gain (hFE) of the BD13916S ranges from 25 to 250.

  10. Is the BD13916S suitable for high-power applications?

    The BD13916S is designed for medium power applications and may not be suitable for very high-power applications.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1.5 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 2V
Power - Max:1.25 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:TO-126-3
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Similar Products

Part Number BD13916S BD1396S BD13516S BD13616S BD13716S BD13816S BD13910S
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Active Active Obsolete Obsolete Active
Transistor Type NPN NPN NPN PNP NPN PNP NPN
Current - Collector (Ic) (Max) 1.5 A 1.5 A 1.5 A 1.5 A 1.5 A 1.5 A 1.5 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 45 V 45 V 60 V 60 V 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V 40 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 63 @ 150mA, 2V
Power - Max 1.25 W 1.25 W 1.25 W 1.25 W 1.25 W 1.25 W 1.25 W
Frequency - Transition - - - - - - -
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package TO-126-3 TO-126-3 TO-126-3 TO-126-3 TO-126-3 TO-126-3 TO-126-3

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