Overview
The BD13910S is an NPN epitaxial silicon transistor produced by onsemi. It is part of the BD135, BD137, and BD139 series, which are designed for medium power linear and switching applications. This transistor is known for its robust performance and reliability, making it suitable for a variety of electronic circuits.
Key Specifications
| Parameter | Value | Units |
|---|---|---|
| Collector-Base Voltage (VCBO) | 80 | V |
| Collector-Emitter Voltage (VCEO) | 80 | V |
| Emitter-Base Voltage (VEBO) | 5 | V |
| Collector Current (DC) (IC) | 1.5 | A |
| Collector Current (Pulse) (ICP) | 3.0 | A |
| Base Current (IB) | 0.5 | A |
| Device Dissipation at TC = 25°C (PC) | 12.5 | W |
| Junction Temperature (TJ) | 150 | °C |
| Storage Temperature (TSTG) | -55 to +150 | °C |
| DC Current Gain (hFE) at VCE = 2 V, IC = 150 mA | 100 ~ 250 | |
| Collector-Emitter Saturation Voltage (VCE(sat)) at IC = 500 mA, IB = 50 mA | 0.5 | V |
| Base-Emitter On Voltage (VBE(on)) at VCE = 2 V, IC = 0.5 A | 1 | V |
Key Features
- Complement to BD136, BD138, and BD140 respectively.
- Medium power linear and switching capabilities.
- High collector current and collector-emitter voltage ratings.
- Low collector-emitter saturation voltage.
- Wide range of DC current gain.
- TO-126 package with various packing methods (Bulk, Rail).
Applications
The BD13910S is suitable for a variety of applications, including:
- Medium power linear amplifiers.
- Switching circuits.
- General-purpose electronic circuits requiring medium power handling.
- Automotive and industrial control systems.
Q & A
- What is the maximum collector-emitter voltage of the BD13910S?
The maximum collector-emitter voltage (VCEO) of the BD13910S is 80 V. - What is the maximum collector current of the BD13910S?
The maximum collector current (IC) of the BD13910S is 1.5 A (DC) and 3.0 A (pulse). - What is the typical DC current gain of the BD13910S?
The typical DC current gain (hFE) of the BD13910S at VCE = 2 V and IC = 150 mA is 100 ~ 250. - What is the collector-emitter saturation voltage of the BD13910S?
The collector-emitter saturation voltage (VCE(sat)) at IC = 500 mA and IB = 50 mA is 0.5 V. - What is the base-emitter on voltage of the BD13910S?
The base-emitter on voltage (VBE(on)) at VCE = 2 V and IC = 0.5 A is 1 V. - What is the junction temperature range of the BD13910S?
The junction temperature (TJ) range of the BD13910S is up to 150 °C. - What is the storage temperature range of the BD13910S?
The storage temperature (TSTG) range of the BD13910S is -55 to +150 °C. - In what package is the BD13910S available?
The BD13910S is available in the TO-126 package. - What are the typical applications of the BD13910S?
The BD13910S is typically used in medium power linear and switching applications, including general-purpose electronic circuits and automotive and industrial control systems. - Is the BD13910S suitable for use in life support systems or medical devices?
No, the BD13910S is not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices.
