Overview
The BD13810S is a PNP epitaxial silicon transistor manufactured by onsemi. It is part of the BD136/138/140 series, known for their medium power linear and switching applications. This transistor is designed to be a complement to the BD135, BD137, and BD139 NPN transistors. The BD13810S is housed in a TO-126 package and is lead-free, making it suitable for a wide range of electronic devices.
Key Specifications
| Parameter | Value | Units |
|---|---|---|
| Collector-Base Voltage (VCBO) | -60 | V |
| Collector-Emitter Voltage (VCEO) | -60 | V |
| Emitter-Base Voltage (VEBO) | -5 | V |
| Collector Current (DC) (IC) | -1.5 | A |
| Collector Current (Pulse) (ICP) | -3.0 | A |
| Base Current (IB) | -0.5 | A |
| Collector Dissipation (PC) at TC=25°C | 12.5 | W |
| Collector Dissipation (PC) at TA=25°C | 1.25 | W |
| Junction Temperature (TJ) | 150 | °C |
| Storage Temperature Range (TSTG) | -55 to 150 | °C |
| DC Current Gain (hFE) at VCE=-2V, IC=-500mA | 100 to 250 | |
| Collector-Emitter Saturation Voltage (VCE(sat)) at IC=-500mA, IB=-50mA | -0.5 | V |
| Base-Emitter ON Voltage (VBE(on)) at VCE=-2V, IC=-0.5A | -1 | V |
Key Features
- PNP Epitaxial Silicon Transistor: Suitable for medium power linear and switching applications.
- High Current Gain: The BD13810S has a DC current gain (hFE) ranging from 100 to 250 at VCE=-2V and IC=-500mA.
- Low Saturation Voltage: Collector-Emitter Saturation Voltage (VCE(sat)) is -0.5V at IC=-500mA and IB=-50mA.
- Lead-Free and TO-126 Package: Compliant with lead-free requirements and housed in a TO-126 package.
- Wide Temperature Range: Operates within a junction temperature range of -55°C to 150°C.
Applications
The BD13810S is versatile and can be used in various applications, including:
- Linear Amplifiers: Due to its high current gain and low saturation voltage, it is suitable for linear amplifier circuits.
- Switching Circuits: Its ability to handle high currents and voltages makes it ideal for switching applications.
- Complementary Circuits: It can be used as a complement to NPN transistors like BD135, BD137, and BD139 in various circuit designs.
Q & A
- What is the maximum collector current for the BD13810S?
The maximum collector current (IC) for the BD13810S is -1.5A (DC) and -3.0A (pulse). - What is the collector-emitter voltage rating for the BD13810S?
The collector-emitter voltage (VCEO) rating for the BD13810S is -60V. - What is the junction temperature range for the BD13810S?
The junction temperature range for the BD13810S is -55°C to 150°C. - What is the typical DC current gain (hFE) for the BD13810S?
The typical DC current gain (hFE) for the BD13810S ranges from 100 to 250 at VCE=-2V and IC=-500mA. - Is the BD13810S lead-free?
Yes, the BD13810S is a lead-free device. - What package type does the BD13810S use?
The BD13810S is housed in a TO-126 package. - What are some common applications for the BD13810S?
The BD13810S is commonly used in linear amplifiers, switching circuits, and as a complement to NPN transistors in various circuit designs. - What is the maximum base current for the BD13810S?
The maximum base current (IB) for the BD13810S is -0.5A. - What is the collector-emitter saturation voltage for the BD13810S?
The collector-emitter saturation voltage (VCE(sat)) for the BD13810S is -0.5V at IC=-500mA and IB=-50mA. - What is the storage temperature range for the BD13810S?
The storage temperature range for the BD13810S is -55°C to 150°C.
