BFU910F115
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NXP USA Inc. BFU910F115

Manufacturer No:
BFU910F115
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
SMALL SIGNAL BIPOLAR TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BFU910F,115 is a high-performance NPN silicon germanium RF transistor manufactured by NXP USA Inc. This component is designed for high-speed, low-noise applications and is packaged in a 4-pin dual-emitter SOT343F package. The transistor is suitable for various RF and microwave applications, leveraging the advantages of silicon germanium technology for enhanced performance.

Key Specifications

Parameter Value
Package Type SOT343F (DFP4)
Transistor Type NPN Silicon Germanium RF Transistor
Number of Pins 4
Moisture Sensitivity Level 1 / Unlimited
Peak Package Temperature 260°C (30 sec.)
Compliance EU RoHS Compliant, Lead Free (Pb), Halogen Free (Cl+Br)
Manufacturing Location Seremban, Malaysia

Key Features

  • High-speed and low-noise performance suitable for RF and microwave applications.
  • Silicon germanium technology for improved transistor characteristics.
  • Dual-emitter configuration in a compact SOT343F package.
  • Compliant with EU RoHS, lead-free, and halogen-free standards.
  • Indefinite environmental friendly use period (EFUP).

Applications

  • RF and microwave amplifiers.
  • High-frequency switching and amplification circuits.
  • Wireless communication systems.
  • Radar and sensing applications.
  • Industrial and automotive electronic systems requiring high-speed, low-noise transistors.

Q & A

  1. What is the package type of the BFU910F,115 transistor?

    The BFU910F,115 transistor is packaged in a 4-pin dual-emitter SOT343F package.

  2. What is the transistor type of the BFU910F,115?

    The BFU910F,115 is an NPN silicon germanium RF transistor.

  3. Is the BFU910F,115 compliant with EU RoHS standards?
  4. What is the peak package temperature for the BFU910F,115?

    The peak package temperature is 260°C for 30 seconds.

  5. Where is the BFU910F,115 manufactured?

    The BFU910F,115 is manufactured in Seremban, Malaysia.

  6. What are the typical applications of the BFU910F,115 transistor?

    The BFU910F,115 is typically used in RF and microwave amplifiers, high-frequency switching and amplification circuits, wireless communication systems, and radar and sensing applications.

  7. Does the BFU910F,115 have any environmental compliance certifications?
  8. What is the moisture sensitivity level of the BFU910F,115?

    The moisture sensitivity level is 1 / Unlimited.

  9. Can the BFU910F,115 be used in automotive applications?
  10. What are the benefits of using silicon germanium technology in the BFU910F,115 transistor?

    Silicon germanium technology provides improved transistor characteristics such as higher speed and lower noise.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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