BFU910F115
  • Share:

NXP USA Inc. BFU910F115

Manufacturer No:
BFU910F115
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
SMALL SIGNAL BIPOLAR TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BFU910F,115 is a high-performance NPN silicon germanium RF transistor manufactured by NXP USA Inc. This component is designed for high-speed, low-noise applications and is packaged in a 4-pin dual-emitter SOT343F package. The transistor is suitable for various RF and microwave applications, leveraging the advantages of silicon germanium technology for enhanced performance.

Key Specifications

Parameter Value
Package Type SOT343F (DFP4)
Transistor Type NPN Silicon Germanium RF Transistor
Number of Pins 4
Moisture Sensitivity Level 1 / Unlimited
Peak Package Temperature 260°C (30 sec.)
Compliance EU RoHS Compliant, Lead Free (Pb), Halogen Free (Cl+Br)
Manufacturing Location Seremban, Malaysia

Key Features

  • High-speed and low-noise performance suitable for RF and microwave applications.
  • Silicon germanium technology for improved transistor characteristics.
  • Dual-emitter configuration in a compact SOT343F package.
  • Compliant with EU RoHS, lead-free, and halogen-free standards.
  • Indefinite environmental friendly use period (EFUP).

Applications

  • RF and microwave amplifiers.
  • High-frequency switching and amplification circuits.
  • Wireless communication systems.
  • Radar and sensing applications.
  • Industrial and automotive electronic systems requiring high-speed, low-noise transistors.

Q & A

  1. What is the package type of the BFU910F,115 transistor?

    The BFU910F,115 transistor is packaged in a 4-pin dual-emitter SOT343F package.

  2. What is the transistor type of the BFU910F,115?

    The BFU910F,115 is an NPN silicon germanium RF transistor.

  3. Is the BFU910F,115 compliant with EU RoHS standards?
  4. What is the peak package temperature for the BFU910F,115?

    The peak package temperature is 260°C for 30 seconds.

  5. Where is the BFU910F,115 manufactured?

    The BFU910F,115 is manufactured in Seremban, Malaysia.

  6. What are the typical applications of the BFU910F,115 transistor?

    The BFU910F,115 is typically used in RF and microwave amplifiers, high-frequency switching and amplification circuits, wireless communication systems, and radar and sensing applications.

  7. Does the BFU910F,115 have any environmental compliance certifications?
  8. What is the moisture sensitivity level of the BFU910F,115?

    The moisture sensitivity level is 1 / Unlimited.

  9. Can the BFU910F,115 be used in automotive applications?
  10. What are the benefits of using silicon germanium technology in the BFU910F,115 transistor?

    Silicon germanium technology provides improved transistor characteristics such as higher speed and lower noise.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
0 Remaining View Similar

In Stock

-
567

Please send RFQ , we will respond immediately.

Same Series
DD15S20JVL0/AA
DD15S20JVL0/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S2S5WV50
DD15S2S5WV50
CONN D-SUB HD RCPT 15P SLDR CUP
CBC46W4S10G0X/AA
CBC46W4S10G0X/AA
CONN D-SUB RCPT 46POS CRIMP
RD15S10HV50/AA
RD15S10HV50/AA
CONN D-SUB RCPT 15POS CRIMP
CBC13W3S10HE3X/AA
CBC13W3S10HE3X/AA
CONN D-SUB RCPT 13POS CRIMP
CBC13W3S10HV50/AA
CBC13W3S10HV50/AA
CONN D-SUB RCPT 13POS CRIMP
CBC9W4S10HE2S/AA
CBC9W4S10HE2S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S10HE2X/AA
DD26S10HE2X/AA
CONN D-SUB HD RCPT 26POS CRIMP
CBC13W3S10HE3S/AA
CBC13W3S10HE3S/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S2S50V50/AA
DD26S2S50V50/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20WE3X
DD26S20WE3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S5W0X/AA
DD26S2S5W0X/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

BC817-25-7-F
BC817-25-7-F
Diodes Incorporated
TRANS NPN 45V 0.5A SOT23-3
BC846BWE6327
BC846BWE6327
Infineon Technologies
TRANS NPN 65V 0.1A SOT323
BC817-25
BC817-25
Diotec Semiconductor
TRANS NPN 45V 0.8A SOT23-3
BSV52LT1G
BSV52LT1G
onsemi
TRANS NPN 12V 0.1A SOT23-3
PBSS5350Z,135
PBSS5350Z,135
Nexperia USA Inc.
TRANS PNP 50V 3A SOT223
MPS751-D26Z
MPS751-D26Z
onsemi
TRANS PNP 60V 2A TO92-3
BC857B,235
BC857B,235
Nexperia USA Inc.
TRANS PNP 45V 0.1A TO236AB
BCX5616QTC
BCX5616QTC
Diodes Incorporated
PWR MID PERF TRANSISTOR SOT89 T&
BCP53TX
BCP53TX
Nexperia USA Inc.
TRANS PNP 80V 1A SOT223
BCX5316H6327XTSA1
BCX5316H6327XTSA1
Infineon Technologies
TRANS PNP 80V 1A SOT89
PN2222AG
PN2222AG
onsemi
TRANS NPN 40V 0.6A TO92
BC807-25W/MIX
BC807-25W/MIX
Nexperia USA Inc.
TRANS PNP 45V 0.5A SOT323

Related Product By Brand

PESD5V0U1BA115
PESD5V0U1BA115
NXP USA Inc.
TVS DIODE 5VWM SOD323
PMEG4030ER115
PMEG4030ER115
NXP USA Inc.
NOW NEXPERIA PMEG4030ER RECTIFIE
BZX84J-C27/L115
BZX84J-C27/L115
NXP USA Inc.
DIODE ZENER
MC9S08PL4CTG
MC9S08PL4CTG
NXP USA Inc.
IC MCU 8BIT 4KB FLASH 16TSSOP
MKL27Z256VFM4
MKL27Z256VFM4
NXP USA Inc.
IC MCU 32BIT 256KB FLASH 32QFN
MK40DX256VLK7
MK40DX256VLK7
NXP USA Inc.
IC MCU 32BIT 256KB FLASH 80FQFP
MIMXRT1052DVL6BR
MIMXRT1052DVL6BR
NXP USA Inc.
I.MX RT1050 CROSSOVER PROCESSOR
SPC5777CCK3MME3
SPC5777CCK3MME3
NXP USA Inc.
IC MCU 32BIT 8MB FLASH 416MAPBGA
P1012NSE2DFB
P1012NSE2DFB
NXP USA Inc.
IC MPU Q OR IQ 800MHZ 689TEBGA
SCC2692AC1N40,602
SCC2692AC1N40,602
NXP USA Inc.
IC UART DUAL 40-DIP
74HC259PW112
74HC259PW112
NXP USA Inc.
NOW NEXPERIA 74HC259PW - D LATCH
TDA8026ET/C2518
TDA8026ET/C2518
NXP USA Inc.
IC SMART CARD SLOT 64TFBGA