BFU910F115
  • Share:

NXP USA Inc. BFU910F115

Manufacturer No:
BFU910F115
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
SMALL SIGNAL BIPOLAR TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BFU910F,115 is a high-performance NPN silicon germanium RF transistor manufactured by NXP USA Inc. This component is designed for high-speed, low-noise applications and is packaged in a 4-pin dual-emitter SOT343F package. The transistor is suitable for various RF and microwave applications, leveraging the advantages of silicon germanium technology for enhanced performance.

Key Specifications

Parameter Value
Package Type SOT343F (DFP4)
Transistor Type NPN Silicon Germanium RF Transistor
Number of Pins 4
Moisture Sensitivity Level 1 / Unlimited
Peak Package Temperature 260°C (30 sec.)
Compliance EU RoHS Compliant, Lead Free (Pb), Halogen Free (Cl+Br)
Manufacturing Location Seremban, Malaysia

Key Features

  • High-speed and low-noise performance suitable for RF and microwave applications.
  • Silicon germanium technology for improved transistor characteristics.
  • Dual-emitter configuration in a compact SOT343F package.
  • Compliant with EU RoHS, lead-free, and halogen-free standards.
  • Indefinite environmental friendly use period (EFUP).

Applications

  • RF and microwave amplifiers.
  • High-frequency switching and amplification circuits.
  • Wireless communication systems.
  • Radar and sensing applications.
  • Industrial and automotive electronic systems requiring high-speed, low-noise transistors.

Q & A

  1. What is the package type of the BFU910F,115 transistor?

    The BFU910F,115 transistor is packaged in a 4-pin dual-emitter SOT343F package.

  2. What is the transistor type of the BFU910F,115?

    The BFU910F,115 is an NPN silicon germanium RF transistor.

  3. Is the BFU910F,115 compliant with EU RoHS standards?
  4. What is the peak package temperature for the BFU910F,115?

    The peak package temperature is 260°C for 30 seconds.

  5. Where is the BFU910F,115 manufactured?

    The BFU910F,115 is manufactured in Seremban, Malaysia.

  6. What are the typical applications of the BFU910F,115 transistor?

    The BFU910F,115 is typically used in RF and microwave amplifiers, high-frequency switching and amplification circuits, wireless communication systems, and radar and sensing applications.

  7. Does the BFU910F,115 have any environmental compliance certifications?
  8. What is the moisture sensitivity level of the BFU910F,115?

    The moisture sensitivity level is 1 / Unlimited.

  9. Can the BFU910F,115 be used in automotive applications?
  10. What are the benefits of using silicon germanium technology in the BFU910F,115 transistor?

    Silicon germanium technology provides improved transistor characteristics such as higher speed and lower noise.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
0 Remaining View Similar

In Stock

-
567

Please send RFQ , we will respond immediately.

Same Series
DD26M20JV5Z
DD26M20JV5Z
CONN D-SUB HD PLUG 26P SLDR CUP
DD26M20LV5Z
DD26M20LV5Z
CONN D-SUB HD PLUG 26P SLDR CUP
CBC13W3S10HE3X/AA
CBC13W3S10HE3X/AA
CONN D-SUB RCPT 13POS CRIMP
CBC46W4S100E20/AA
CBC46W4S100E20/AA
CONN D-SUB RCPT 46POS CRIMP
DD26M20HE0/AA
DD26M20HE0/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S200E2X/AA
DD26S200E2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200T20/AA
DD26S200T20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S5000
DD26S2S5000
CONN D-SUB HD RCPT 26P SLDR CUP
CBC47W1S1S50V50
CBC47W1S1S50V50
CONN D-SUB RCPT 47POS CRIMP
DD26S2S0V5X
DD26S2S0V5X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S600X/AA
DD44S32S600X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20W0X/AA
DD26S20W0X/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

BD13610STU
BD13610STU
onsemi
TRANS PNP 45V 1.5A TO126-3
BC857B
BC857B
Infineon Technologies
TRANS PNP 45V 0.1A SOT23-3
NSV1C301ET4G-VF01
NSV1C301ET4G-VF01
onsemi
TRANS NPN 100V 3A DPAK
BDX53C
BDX53C
STMicroelectronics
TRANS NPN DARL 100V 8A TO220
MCH6203-TL-E
MCH6203-TL-E
onsemi
TRANS NPN 50V 1A 6MCPH
BCP56H115
BCP56H115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BC857BT,115
BC857BT,115
NXP USA Inc.
TRANS PNP 45V 0.1A SC75
BCX56-10R1
BCX56-10R1
onsemi
TRANS NPN 80V 1A SOT89-3
BCP5610E6327HTSA1
BCP5610E6327HTSA1
Infineon Technologies
TRANS NPN 80V 1A SOT223-4
TIP126-BP
TIP126-BP
Micro Commercial Co
TRANS PNP DARL 80V 5A TO220AB
BC846B/SNVL
BC846B/SNVL
Nexperia USA Inc.
TRANS NPN 65V 0.1A TO236AB
SS8050-C-AP
SS8050-C-AP
Micro Commercial Co
TRANS NPN 25V 1.5A TO92

Related Product By Brand

BAT54S/6215
BAT54S/6215
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
BC817DPN/DG/B2115
BC817DPN/DG/B2115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
LPC55S28JBD64K
LPC55S28JBD64K
NXP USA Inc.
IC MCU 32BIT 512KB FLASH 64HTQFP
S9S12P32J0CFTR
S9S12P32J0CFTR
NXP USA Inc.
IC MCU 16BIT 32KB FLASH 48QFN
P89LPC935FDH,518
P89LPC935FDH,518
NXP USA Inc.
IC MCU 8BIT 8KB FLASH 28TSSOP
PCA9534BS3,118
PCA9534BS3,118
NXP USA Inc.
IC I/O EXPANDER I2C 8B 16HVQFN
TDA8932T/N1,118
TDA8932T/N1,118
NXP USA Inc.
IC AMP CLSS D MONO/STER 55W 32SO
74AHC244PW-Q100118
74AHC244PW-Q100118
NXP USA Inc.
BUS DRIVER, AHC/VHC/H/U/V SERIES
74LV08D/C118
74LV08D/C118
NXP USA Inc.
AND GATE, LV/LV-A/LVX/H SERIES
PCF2111CT/1,112
PCF2111CT/1,112
NXP USA Inc.
IC DRVR 64 SEGMENT 40VSOP
UJA1061TW/5V0/C/T518
UJA1061TW/5V0/C/T518
NXP USA Inc.
FAULT-TOLERANT CAN/LIN FAIL-SAFE
MMDS09254HT1
MMDS09254HT1
NXP USA Inc.
ADVANCED DOHERTY ALIGNMENT MODUL