BC846BWE6327
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Infineon Technologies BC846BWE6327

Manufacturer No:
BC846BWE6327
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
TRANS NPN 65V 0.1A SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC846BWE6327 is a general-purpose NPN bipolar junction transistor (BJT) manufactured by Infineon Technologies. This transistor is designed for small signal applications and is known for its reliability and versatility. It is packaged in a compact SOT323 (SC-70) surface-mount device (SMD) plastic package, making it suitable for a wide range of electronic designs where space is a constraint.

Key Specifications

ParameterValue
Transistor TypeNPN
Maximum Collector Current (I_C)100 mA
Maximum Collector-Emitter Voltage (V_CE)65 V
Package TypeSOT323 (SC-70)
Minimum Current Gain (h_FE)200
Maximum Current Gain (h_FE)450
Maximum Junction Temperature (T_J)150°C
Maximum Total Power Dissipation (P_tot)200 mW
Transition Frequency (f_T)100 MHz

Key Features

  • Compact SOT323 (SC-70) SMD package for space-efficient designs.
  • General-purpose switching and amplification capabilities.
  • High collector-emitter voltage of 65 V and collector current of 100 mA.
  • Wide range of current gain (h_FE) from 200 to 450.
  • High transition frequency of 100 MHz.
  • Maximum junction temperature of 150°C.

Applications

The BC846BWE6327 transistor is versatile and can be used in various applications across different industries, including:

  • Automotive systems for general-purpose switching and amplification.
  • Industrial control systems for signal processing and amplification.
  • Consumer electronics for audio and video circuits.
  • Mobile and wearable devices where compact size and low power consumption are critical.
  • Computing and power management systems requiring reliable and efficient switching.

Q & A

  1. What is the maximum collector current of the BC846BWE6327 transistor?
    The maximum collector current is 100 mA.
  2. What is the maximum collector-emitter voltage of the BC846BWE6327 transistor?
    The maximum collector-emitter voltage is 65 V.
  3. In what package is the BC846BWE6327 transistor available?
    The transistor is available in a SOT323 (SC-70) SMD package.
  4. What is the minimum current gain (h_FE) of the BC846BWE6327 transistor?
    The minimum current gain is 200.
  5. What is the maximum junction temperature of the BC846BWE6327 transistor?
    The maximum junction temperature is 150°C.
  6. What is the transition frequency (f_T) of the BC846BWE6327 transistor?
    The transition frequency is 100 MHz.
  7. Is the BC846BWE6327 transistor RoHS compliant?
    No, the BC846BWE6327 transistor is not RoHS compliant.
  8. What are the typical applications of the BC846BWE6327 transistor?
    The transistor is used in general-purpose switching and amplification in various industries including automotive, industrial, consumer electronics, and more.
  9. How many pins does the BC846BWE6327 transistor have?
    The transistor has 3 pins.
  10. What is the maximum total power dissipation (P_tot) of the BC846BWE6327 transistor?
    The maximum total power dissipation is 200 mW.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):65 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:330 mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SOT-323
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