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MMBTA42LT1
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Infineon Technologies MMBTA42LT1

Manufacturer No:
MMBTA42LT1
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
TRANS NPN 300V 0.5A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBTA42LT1 is a small-signal NPN bipolar junction transistor (BJT) packaged in a SOT-23 (TO-236) case. It is widely used in various electronic circuits due to its high voltage and current handling capabilities. Although it is not exclusively produced by Infineon Technologies, it is available from several manufacturers, including ON Semiconductor.

Key Specifications

CharacteristicSymbolValueUnit
Collector-Emitter VoltageVCEO300Vdc
Collector-Base VoltageVCBO300Vdc
Emitter-Base VoltageVEBO6.0Vdc
Collector CurrentIC0.5A
Base CurrentIB50mA
DC Current Gain (hFE)hFE25-40-
Collector-Emitter Saturation VoltageVCE(sat)0.5Vdc
Base-Emitter Saturation VoltageVBE(sat)0.9Vdc
Current-Gain Bandwidth Product (fT)fT70MHz
Collector-Base Capacitance (Ccb)Ccb3.0-4.0pF

Key Features

  • Pb-Free, Halogen Free/BFR Free, and RoHS Compliant
  • High voltage handling: VCEO = 300 Vdc
  • High current handling: IC = 0.5 A
  • Small SOT-23 package suitable for surface mount applications
  • AEC-Q101 qualified for automotive and other applications requiring unique site and control change requirements
  • High DC current gain (hFE) of 25-40

Applications

The MMBTA42LT1 transistor is versatile and can be used in a variety of applications, including:

  • Automotive systems: Due to its AEC-Q101 qualification, it is suitable for use in automotive electronics.
  • General-purpose amplifiers and switches: Its high voltage and current handling make it suitable for various amplification and switching applications.
  • Audio circuits: It can be used in audio amplifiers and other audio-related circuits.
  • Power supplies: It can be used in power supply circuits due to its high voltage and current capabilities.

Q & A

  1. What is the maximum collector-emitter voltage of the MMBTA42LT1 transistor?
    The maximum collector-emitter voltage (VCEO) is 300 Vdc.
  2. What is the maximum collector current of the MMBTA42LT1 transistor?
    The maximum collector current (IC) is 0.5 A.
  3. What is the package type of the MMBTA42LT1 transistor?
    The MMBTA42LT1 is packaged in a SOT-23 (TO-236) case.
  4. Is the MMBTA42LT1 RoHS compliant?
    Yes, the MMBTA42LT1 is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.
  5. What is the DC current gain (hFE) of the MMBTA42LT1 transistor?
    The DC current gain (hFE) is 25-40.
  6. What are some common applications of the MMBTA42LT1 transistor?
    It is commonly used in automotive systems, general-purpose amplifiers and switches, audio circuits, and power supplies.
  7. Is the MMBTA42LT1 AEC-Q101 qualified?
    Yes, the MMBTA42LT1 is AEC-Q101 qualified for automotive and other applications requiring unique site and control change requirements.
  8. What is the collector-emitter saturation voltage (VCE(sat)) of the MMBTA42LT1 transistor?
    The collector-emitter saturation voltage (VCE(sat)) is 0.5 Vdc.
  9. What is the base-emitter saturation voltage (VBE(sat)) of the MMBTA42LT1 transistor?
    The base-emitter saturation voltage (VBE(sat)) is 0.9 Vdc.
  10. What is the current-gain bandwidth product (fT) of the MMBTA42LT1 transistor?
    The current-gain bandwidth product (fT) is 70 MHz.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):300 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 2mA, 20mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 30mA, 10V
Power - Max:225 mW
Frequency - Transition:50MHz
Operating Temperature:- 
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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Similar Products

Part Number MMBTA42LT1 MMBTA42LT1G MMBTA92LT1 MMBTA42LT3 MMBTA43LT1
Manufacturer Infineon Technologies onsemi Infineon Technologies onsemi onsemi
Product Status Obsolete Active Obsolete Obsolete Obsolete
Transistor Type NPN NPN PNP NPN NPN
Current - Collector (Ic) (Max) 500 mA 500 mA 500 mA 500 mA 50 mA
Voltage - Collector Emitter Breakdown (Max) 300 V 300 V 300 V 300 V 200 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA 500mV @ 2mA, 20mA 500mV @ 2mA, 20mA 500mV @ 2mA, 20mA 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 30mA, 10V 40 @ 30mA, 10V 25 @ 30mA, 10V 40 @ 30mA, 10V 40 @ 30mA, 10V
Power - Max 225 mW 225 mW 360 mW 225 mW 225 mW
Frequency - Transition 50MHz 50MHz 50MHz 50MHz 50MHz
Operating Temperature - -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) PG-SOT23 SOT-23-3 (TO-236) SOT-23-3 (TO-236)

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