MMBTA42LT1G
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onsemi MMBTA42LT1G

Manufacturer No:
MMBTA42LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 300V 0.5A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBTA42LT1G is a high-voltage NPN bipolar junction transistor manufactured by onsemi. This device is designed for general-purpose amplifier applications and is particularly suited for lower power surface mount configurations. It features a compact SOT-23 (TO-236) 3-lead package, making it ideal for a variety of electronic designs where space is a constraint. The transistor is AEC-Q101 qualified and PPAP capable, ensuring its reliability and suitability for automotive and industrial applications.

Key Specifications

Parameter Value
Transistor Polarity NPN
Collector Emitter Voltage Max (Vceo) 300V
Continuous Collector Current (IC) 500mA
Power Dissipation (Pd) 300mW
Transistor Mounting Surface Mount
Transistor Case Style SOT-23
DC Current Gain (hFE) Min 40 @ 30mA, 10V
No. of Pins 3 Pins
Transition Frequency 50MHz
Operating Temperature Max (TJ) 150°C
Automotive Qualification Standard AEC-Q101
Moisture Sensitivity Level (MSL) MSL 1 - Unlimited
RoHS Compliance Compliant

Key Features

  • High Voltage Capability: The MMBTA42LT1G can handle a collector-emitter voltage of up to 300V, making it suitable for high-voltage applications.
  • Compact Packaging: Housed in a SOT-23 (TO-236) 3-lead package, this transistor is ideal for surface mount configurations where space is limited.
  • High Current Handling: With a continuous collector current of up to 500mA, this transistor is capable of handling significant current loads.
  • Efficient Power Dissipation: The transistor has a power dissipation capacity of 300mW, ensuring efficient operation in various applications.
  • Wide Operating Temperature Range: The device operates between -55°C and 150°C, making it versatile for different environmental conditions.
  • AEC-Q101 Qualified: This qualification ensures the transistor's reliability and suitability for automotive applications.
  • RoHS Compliant: The transistor is free from hazardous substances, making it environmentally friendly.

Applications

  • Consumer Electronics: Suitable for audio amplifiers and power supply circuits due to its efficient power handling and compact size.
  • Audio and Video Systems: Used in signal amplification and processing roles in home theater systems and professional audio equipment.
  • Switching Power Supplies: Ideal for applications requiring efficient power conversion and control.
  • Telecommunication Infrastructure: Aids in signal amplification in transceivers and other communication equipment.
  • Industrial and Power Management: Used in various industrial applications where high voltage and current handling are necessary.

Q & A

  1. What is the collector-emitter voltage rating of the MMBTA42LT1G?

    The collector-emitter voltage rating of the MMBTA42LT1G is up to 300V.

  2. What is the continuous collector current capacity of the MMBTA42LT1G?

    The continuous collector current capacity is up to 500mA.

  3. What is the power dissipation capacity of the MMBTA42LT1G?

    The power dissipation capacity is 300mW.

  4. What is the operating temperature range of the MMBTA42LT1G?

    The operating temperature range is from -55°C to 150°C.

  5. Is the MMBTA42LT1G RoHS compliant?
  6. What is the package type of the MMBTA42LT1G?

    The package type is SOT-23 (TO-236) with 3 leads.

  7. What is the transition frequency of the MMBTA42LT1G?

    The transition frequency is 50MHz.

  8. Is the MMBTA42LT1G AEC-Q101 qualified?
  9. What are some common applications of the MMBTA42LT1G?
  10. What is the moisture sensitivity level (MSL) of the MMBTA42LT1G?

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):300 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 2mA, 20mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 30mA, 10V
Power - Max:225 mW
Frequency - Transition:50MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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Similar Products

Part Number MMBTA42LT1G MMBTA92LT1G MMBTA42LT3G MMBTA43LT1G MMBTA42LT1
Manufacturer onsemi onsemi onsemi onsemi Infineon Technologies
Product Status Active Active Active Obsolete Obsolete
Transistor Type NPN PNP NPN NPN NPN
Current - Collector (Ic) (Max) 500 mA 500 mA 500 mA 50 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 300 V 300 V 300 V 200 V 300 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA 500mV @ 2mA, 20mA 500mV @ 2mA, 20mA 500mV @ 2mA, 20mA 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max) 100nA (ICBO) 250nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 30mA, 10V 25 @ 30mA, 10V 40 @ 30mA, 10V 40 @ 30mA, 10V 40 @ 30mA, 10V
Power - Max 225 mW 300 mW 225 mW 225 mW 225 mW
Frequency - Transition 50MHz 50MHz 50MHz 50MHz 50MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)

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