MMBTA92LT1G
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onsemi MMBTA92LT1G

Manufacturer No:
MMBTA92LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PNP 300V 0.5A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBTA92LT1G is a high-voltage PNP bipolar transistor manufactured by onsemi. This device is part of the MMBT series and is designed for general-purpose amplifier applications. It is housed in the SOT-23 (SC-59, TO-236) package, making it suitable for low-power surface mount applications. The transistor is Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability and regulatory compliance.

Key Specifications

ParameterValueUnit
PolarityPNP
TypeGeneral Purpose
Collector-Base Voltage (Vcb)300V
Collector-Emitter Voltage (Vce)300V
Emitter-Base Voltage (Veb)5V
Collector Current (Ic max)50mA
Power Dissipation (Pd)225mW
DC Current Gain (hFE min)25
Transition Frequency (ft)50MHz
Collector Capacitance (Cc)6pF
Maximum Operating Junction Temperature (Tj)150°C
Package StyleSOT-23 (SC-59, TO-236)
Mounting MethodSurface Mount

Key Features

  • Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability and regulatory compliance.
  • AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
  • High breakdown voltage with a maximum collector-base voltage and collector-emitter voltage of 300 V.
  • Low power dissipation of 225 mW, suitable for surface mount applications.
  • High DC current gain with a minimum value of 25.

Applications

The MMBTA92LT1G is designed for general-purpose amplifier applications. It is particularly useful in scenarios requiring high voltage handling and low power consumption, such as in automotive electronics, consumer electronics, and industrial control systems.

Q & A

  1. What is the polarity of the MMBTA92LT1G transistor?
    The MMBTA92LT1G transistor has a PNP polarity.
  2. What is the maximum collector-base voltage of the MMBTA92LT1G?
    The maximum collector-base voltage (Vcb) is 300 V.
  3. What is the maximum collector current of the MMBTA92LT1G?
    The maximum collector current (Ic max) is 50 mA.
  4. What is the power dissipation of the MMBTA92LT1G?
    The total device power dissipation (Pd) is 225 mW.
  5. What is the DC current gain of the MMBTA92LT1G?
    The DC current gain (hFE min) is 25.
  6. What is the transition frequency of the MMBTA92LT1G?
    The transition frequency (ft) is 50 MHz.
  7. What is the package style of the MMBTA92LT1G?
    The package style is SOT-23 (SC-59, TO-236).
  8. Is the MMBTA92LT1G RoHS compliant?
    Yes, the MMBTA92LT1G is Pb-free, halogen-free, and RoHS compliant.
  9. What are the typical applications of the MMBTA92LT1G?
    The MMBTA92LT1G is used in general-purpose amplifier applications, particularly in automotive electronics, consumer electronics, and industrial control systems.
  10. What is the maximum operating junction temperature of the MMBTA92LT1G?
    The maximum operating junction temperature (Tj) is 150 °C.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):300 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 2mA, 20mA
Current - Collector Cutoff (Max):250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:25 @ 30mA, 10V
Power - Max:300 mW
Frequency - Transition:50MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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Similar Products

Part Number MMBTA92LT1G MMBTA92LT3G MMBTA93LT1G MMBTA42LT1G MMBTA92LT1
Manufacturer onsemi onsemi onsemi onsemi Infineon Technologies
Product Status Active Active Obsolete Active Obsolete
Transistor Type PNP PNP PNP NPN PNP
Current - Collector (Ic) (Max) 500 mA 500 mA 500 mA 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 300 V 300 V 200 V 300 V 300 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA 500mV @ 2mA, 20mA 500mV @ 2mA, 20mA 500mV @ 2mA, 20mA 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max) 250nA (ICBO) 250nA (ICBO) 250nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 30mA, 10V 25 @ 30mA, 10V 25 @ 30mA, 10V 40 @ 30mA, 10V 25 @ 30mA, 10V
Power - Max 300 mW 300 mW 300 mW 225 mW 360 mW
Frequency - Transition 50MHz 50MHz 50MHz 50MHz 50MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) PG-SOT23

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