Overview
The BSC010N04LSCATMA1, produced by Infineon Technologies, is a high-performance N-channel MOSFET designed for various power management applications. This component is part of Infineon's OptiMOS™ family, known for its advanced thin wafer technology, which enhances switching behavior and reduces on-resistance (RDS(on)).
This MOSFET is optimized for synchronous rectification and offers significant improvements over similar devices, including a 15% lower RDS(on) and a 31% better figure of merit (RDS(on) x Qg).
Key Specifications
| Parameter | Symbol | Values | Unit | Note/Test Condition |
|---|---|---|---|---|
| Continuous Drain Current | ID | 206 A (at TJ = 25°C), 181 A (at TJ = 100°C) | A | VGS = 10 V |
| Drain-Source On-Resistance | RDS(on) | 0.95 mΩ (typical at VGS = 10 V, TJ = 25°C) | mΩ | VGS = 10 V, TJ = 25°C |
| Input Capacitance | Ciss | 6800 pF (typical at VDS = 20 V, f = 1 MHz) | pF | VDS = 20 V, f = 1 MHz |
| Output Capacitance | Coss | 1900 pF (typical at VDS = 20 V, f = 1 MHz) | pF | VDS = 20 V, f = 1 MHz |
| Reverse Transfer Capacitance | Crss | 160 pF (typical at VDS = 20 V, f = 1 MHz) | pF | VDS = 20 V, f = 1 MHz |
| Turn-On Delay Time | td(on) | 10 ns (typical at VDS = 20 V, VGS = 10 V, ID = 30 A) | ns | VDS = 20 V, VGS = 10 V, ID = 30 A |
| Turn-Off Delay Time | td(off) | 46 ns (typical at VDS = 20 V, VGS = 10 V, ID = 30 A) | ns | VDS = 20 V, VGS = 10 V, ID = 30 A |
Key Features
- Optimized for Synchronous Rectification: Designed to enhance efficiency in synchronous rectification applications.
- Low On-Resistance: 15% lower RDS(on) compared to alternative devices, contributing to higher system efficiency.
- Improved Figure of Merit (FOM): 31% better FOM (RDS(on) x Qg) over similar devices, enhancing overall performance.
- RoHS Compliant and Halogen-Free: Meets environmental standards and is free from halogens, making it suitable for a wide range of applications.
- MSL1 Rated: Ensures high reliability and minimal risk of moisture-related failures.
- High System Efficiency: Reduces the need for paralleling, increases power density, and lowers system costs.
- Low Voltage Overshoot: Minimizes voltage overshoot, ensuring stable operation.
Applications
- Synchronous Rectification: Ideal for high-efficiency power supplies and DC-DC converters.
- Solar Micro Inverter: Suitable for renewable energy applications requiring high efficiency and reliability.
- Isolated DC-DC Converters: Enhances performance in isolated power conversion systems.
- Motor Control: Used in motor drive applications where high efficiency and low on-resistance are critical.
- Or-ing Switches: Applicable in power distribution and protection circuits.
Q & A
- What is the maximum continuous drain current of the BSC010N04LSCATMA1?
The maximum continuous drain current is 206 A at TJ = 25°C and 181 A at TJ = 100°C.
- What is the typical on-resistance (RDS(on)) of this MOSFET?
The typical on-resistance is 0.95 mΩ at VGS = 10 V and TJ = 25°C.
- Is the BSC010N04LSCATMA1 RoHS compliant?
Yes, it is RoHS compliant and halogen-free.
- What are the key benefits of using this MOSFET?
The key benefits include highest system efficiency, less paralleling required, increased power density, system cost reduction, and very low voltage overshoot.
- What are some potential applications for the BSC010N04LSCATMA1?
Potential applications include synchronous rectification, solar micro inverters, isolated DC-DC converters, motor control, and Or-ing switches.
- What is the maximum operating temperature for this MOSFET?
The maximum operating temperature is 175°C.
- What is the input capacitance of the BSC010N04LSCATMA1?
The input capacitance is typically 6800 pF at VDS = 20 V and f = 1 MHz.
- How does the BSC010N04LSCATMA1 improve the figure of merit (FOM) compared to other devices?
It improves the FOM by 31% over similar devices, thanks to its lower RDS(on) and Qg.
- What is the turn-on delay time of this MOSFET?
The turn-on delay time is typically 10 ns at VDS = 20 V, VGS = 10 V, and ID = 30 A.
- Is the BSC010N04LSCATMA1 MSL1 rated?
Yes, it is MSL1 rated, ensuring high reliability and minimal risk of moisture-related failures).
