BSC010N04LSATMA1
  • Share:

Infineon Technologies BSC010N04LSATMA1

Manufacturer No:
BSC010N04LSATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 38A/100A TDSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSC010N04LSATMA1 is a high-performance N-channel MOSFET designed by Infineon Technologies AG. This device is part of the OptiMOS series and is renowned for its exceptional voltage and current handling capabilities, making it a top choice for demanding power management applications. With a maximum voltage rating of 40V and a continuous drain current of up to 100A, this MOSFET is ideal for applications requiring high efficiency and fast switching. The TDSON-8 package ensures low parasitic capacitance, enhancing the device's suitability for high-power electronic systems.

Key Specifications

Fet Type N-Channel
Drain-to-Source Voltage (Vdss) 40V
Continuous Drain Current (Id) 100A
On Resistance (Rds(on)) 850µΩ (at Vgs = 10V)
Gate Source Threshold Voltage (Vgs(th)) Max 2V
Power Dissipation (Pd) 139W
Operating Temperature Max 150°C
Package Type TDSON-8
Mounting Method Surface Mount
MSL Rating MSL 1 - Unlimited
RoHS Compliance Yes, RoHS compliant and halogen-free

Key Features

  • Optimized for synchronous rectification
  • 15% lower Rds(on) than alternative devices
  • 31% improvement of Figure of Merit (FOM) over similar devices
  • Integrated Schottky-like diode
  • RoHS compliant and halogen-free package
  • MSL1 rated
  • Highest system efficiency
  • Less paralleling required
  • Increased power density
  • System cost reduction
  • Very low voltage overshoot

Applications

  • Synchronous rectification
  • Isolated DC-DC converters
  • Motor control
  • Or-ing switches
  • Solar micro inverters
  • Automotive power management systems
  • Battery management systems
  • LED drivers
  • Voltage regulators
  • Industrial control systems

Q & A

  1. Q: What is the maximum voltage and current rating of the BSC010N04LSATMA1 MOSFET?

    A: The BSC010N04LSATMA1 has a maximum voltage rating of 40V and can handle a continuous drain current of up to 100A.

  2. Q: What is the package type of the BSC010N04LSATMA1?

    A: The package type is TDSON-8, which is a dual SO8 package.

  3. Q: Is the BSC010N04LSATMA1 RoHS compliant?

    A: Yes, the BSC010N04LSATMA1 is RoHS compliant and halogen-free.

  4. Q: What are the key applications of the BSC010N04LSATMA1?

    A: Key applications include synchronous rectification, isolated DC-DC converters, motor control, or-ing switches, and various power management systems in automotive, industrial, and solar applications.

  5. Q: What is the on-resistance (Rds(on)) of the BSC010N04LSATMA1?

    A: The on-resistance (Rds(on)) is 850µΩ at Vgs = 10V.

  6. Q: What is the operating temperature range of the BSC010N04LSATMA1?

    A: The maximum operating temperature is 150°C.

  7. Q: Does the BSC010N04LSATMA1 have an integrated diode?

    A: Yes, it features an integrated Schottky-like diode.

  8. Q: What is the MSL rating of the BSC010N04LSATMA1?

    A: The MSL rating is MSL 1 - Unlimited.

  9. Q: How does the BSC010N04LSATMA1 improve system efficiency?

    A: It offers highest system efficiency, less paralleling required, increased power density, and system cost reduction due to its low on-resistance and improved FOM.

  10. Q: Where can I find detailed information about the BSC010N04LSATMA1?

    A: Detailed information can be found in the datasheet available on the manufacturer's website or through authorized distributors like Mouser, Newark, and Ovaga.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:38A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:95 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6800 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 139W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8 FL
Package / Case:8-PowerTDFN
0 Remaining View Similar

In Stock

$2.50
240

Please send RFQ , we will respond immediately.

Similar Products

Part Number BSC010N04LSATMA1 BSC019N04LSATMA1 BSC010N04LSTATMA1 BSC014N04LSATMA1 BSC010N04LSIATMA1 BSC010N04LSCATMA1 BSC010N04LS6ATMA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel - N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 40 V 40 V 40 V - 40 V
Current - Continuous Drain (Id) @ 25°C 38A (Ta), 100A (Tc) 27A (Ta), 100A (Tc) 39A (Ta), 100A (Tc) 32A (Ta), 100A (Tc) 37A (Ta), 100A (Tc) 282A (Tc) 40A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V - 4.5V, 10V
Rds On (Max) @ Id, Vgs 1mOhm @ 50A, 10V 1.9mOhm @ 50A, 10V 1mOhm @ 50A, 10V 1.4mOhm @ 50A, 10V 1.05mOhm @ 50A, 10V - 1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA 2V @ 250µA 2V @ 250µA 2V @ 250µA - 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 95 nC @ 10 V 41 nC @ 10 V 133 nC @ 10 V 61 nC @ 10 V 87 nC @ 10 V - 67 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V - ±20V
Input Capacitance (Ciss) (Max) @ Vds 6800 pF @ 20 V 2900 pF @ 20 V 9520 pF @ 20 V 4300 pF @ 20 V 6200 pF @ 20 V - 4600 pF @ 20 V
FET Feature - - - - Schottky Diode (Body) - -
Power Dissipation (Max) 2.5W (Ta), 139W (Tc) 2.5W (Ta), 78W (Tc) 3W (Ta), 167W (Tc) 2.5W (Ta), 96W (Tc) 2.5W (Ta), 139W (Tc) - 3W (Ta), 150W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) - -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount - Surface Mount
Supplier Device Package PG-TDSON-8 FL PG-TDSON-8-1 PG-TDSON-8 FL SuperSO8 PG-TDSON-8 FL - PG-TDSON-8-6
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN - 8-PowerTDFN

Related Product By Categories

BSC040N10NS5ATMA1
BSC040N10NS5ATMA1
Infineon Technologies
MOSFET N-CH 100V 100A TDSON
NCV8440ASTT1G
NCV8440ASTT1G
onsemi
MOSFET N-CH 59V 2.6A SOT223
STD60NF06T4
STD60NF06T4
STMicroelectronics
MOSFET N-CH 60V 60A DPAK
STF5N95K5
STF5N95K5
STMicroelectronics
MOSFET N-CH 950V 3.5A TO220FP
NTMFS002P03P8ZT1G
NTMFS002P03P8ZT1G
onsemi
MOSFET, POWER -30V P-CHANNEL, SO
NTHL050N65S3HF
NTHL050N65S3HF
onsemi
MOSFET N-CH 650V 58A TO247-3
PMPB15XP
PMPB15XP
Nexperia USA Inc.
PMPB15XP - 12 V, SINGLE P-CHANNE
FQD2N60CTM
FQD2N60CTM
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 1
FDMA6676PZ
FDMA6676PZ
onsemi
MOSFET P-CH 30V 11A 6MICROFET
STS12NF30L
STS12NF30L
STMicroelectronics
MOSFET N-CH 30V 12A 8SO
NTD3055-094-1
NTD3055-094-1
onsemi
MOSFET N-CH 60V 12A IPAK
NX3008NBKT,115
NX3008NBKT,115
NXP USA Inc.
MOSFET N-CH 30V 350MA SC75

Related Product By Brand

BAV 70S E6433
BAV 70S E6433
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT363
BAV 99S H6827
BAV 99S H6827
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT363
BAV 99W H6433
BAV 99W H6433
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT323
BAS28E6359HTMA1
BAS28E6359HTMA1
Infineon Technologies
DIODE GP 80V 100MA SOT143
BC847PNH6727XTSA1
BC847PNH6727XTSA1
Infineon Technologies
TRANS NPN/PNP 45V 0.1A SOT363-6
BCX5616H6433XTMA1
BCX5616H6433XTMA1
Infineon Technologies
TRANS NPN 80V 1A SOT89
IPW65R080CFDFKSA1
IPW65R080CFDFKSA1
Infineon Technologies
MOSFET N-CH 700V 43.3A TO247-3
FF600R12ME4B11BPSA2
FF600R12ME4B11BPSA2
Infineon Technologies
MEDIUM POWER ECONO AG-ECONOD-411
IKW40N120H3FKSA1
IKW40N120H3FKSA1
Infineon Technologies
IGBT 1200V 80A 483W TO247-3
ICE2PCS02GFUMA1
ICE2PCS02GFUMA1
Infineon Technologies
IC PFC CTRLR CCM 65KHZ 8DSO
BTS4140NHUMA1
BTS4140NHUMA1
Infineon Technologies
IC PWR SWTCH N-CHAN 1:1 SOT223-4
CY7C1041DV33-10ZSXIT
CY7C1041DV33-10ZSXIT
Infineon Technologies
IC SRAM 4MBIT PARALLEL 44TSOP II