Infineon Technologies BSC010N04LSTATMA1

Manufacturer No:: BSC010N04LSTATMA1
Manufacturer:: Infineon Technologies
Package:: Tape & Reel (TR)
Description:: MOSFET N-CH 40V 39A/100A TDSON
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Product Introduction

Overview

The BSC010N04LSTATMA1 is a high-performance N-channel MOSFET produced by Infineon Technologies. This device is part of Infineon's 40V MOSFET product family, which is renowned for its industry-leading low R_DS(on) and excellent switching behavior. The advanced thin wafer technology used in its manufacture results in a 15% lower R_DS(on) and a 31% improvement in the figure of merit (R_DS(on) x Q_g) compared to similar devices. This makes it highly suitable for fast switching applications and synchronous rectification.

Key Specifications

Parameter	Value
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (V_DS)	40 V
Continuous Drain Current (I_D)	100 A
On-Resistance (R_DS(on))	850 µΩ
Package Type	Surface Mount
RoHS Compliance	Yes, halogen free
MSL Rating	MSL1

Key Features

Optimized for synchronous rectification
15% lower R_DS(on) than alternative devices
31% improvement of FOM over similar devices
RoHS compliant - halogen free
MSL1 rated

Applications

Synchronous rectification
Solar micro inverter
Isolated DC-DC converters
Motor control
Or-ing switches

Q & A

What is the drain to source voltage (V_DS) of the BSC010N04LSTATMA1?
The drain to source voltage (V_DS) is 40 V.
What is the continuous drain current (I_D) of this MOSFET?
The continuous drain current (I_D) is 100 A.
What is the on-resistance (R_DS(on)) of the BSC010N04LSTATMA1?
The on-resistance (R_DS(on)) is 850 µΩ.
Is the BSC010N04LSTATMA1 RoHS compliant?
Yes, the BSC010N04LSTATMA1 is RoHS compliant and halogen free.
What is the MSL rating of this device?
The MSL rating is MSL1.
What are the primary applications of the BSC010N04LSTATMA1?
The primary applications include synchronous rectification, solar micro inverters, isolated DC-DC converters, motor control, and Or-ing switches.
How does the BSC010N04LSTATMA1 improve system efficiency?
The device improves system efficiency through its low R_DS(on) and enhanced figure of merit, reducing the need for paralleling and increasing power density.
What technology is used in the manufacture of the BSC010N04LSTATMA1?
The device is manufactured using advanced thin wafer technology.
Is the BSC010N04LSTATMA1 suitable for fast switching applications?
Yes, it is optimized for fast switching applications due to its excellent switching behavior.
What are the benefits of using the BSC010N04LSTATMA1 in terms of system cost?
The use of the BSC010N04LSTATMA1 can lead to system cost reduction due to its high efficiency and reduced need for paralleling.

In Stock

UnitPrice: $3.19

Quantity: 134

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Part Number	BSC010N04LSTATMA1	BSC014N04LSTATMA1	BSC019N04LSTATMA1	BSC010N04LS6ATMA1	BSC010N04LSATMA1	BSC010N04LSCATMA1	BSC010N04LSIATMA1
Manufacturer	Infineon Technologies	Infineon Technologies	Infineon Technologies	Infineon Technologies	Infineon Technologies	Infineon Technologies	Infineon Technologies
Product Status	Active	Active	Active	Active	Active	Active	Active
FET Type	N-Channel	N-Channel	-	N-Channel	N-Channel	-	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	-	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	-	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V	40 V	-	40 V	40 V	-	40 V
Current - Continuous Drain (Id) @ 25°C	39A (Ta), 100A (Tc)	33A (Ta), 100A (Tc)	28A (Ta), 161A (Tc)	40A (Ta), 100A (Tc)	38A (Ta), 100A (Tc)	282A (Tc)	37A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	4.5V, 10V	-	4.5V, 10V	4.5V, 10V	-	4.5V, 10V
Rds On (Max) @ Id, Vgs	1mOhm @ 50A, 10V	1.4mOhm @ 50A, 10V	-	1mOhm @ 50A, 10V	1mOhm @ 50A, 10V	-	1.05mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA	2V @ 250µA	-	2.3V @ 250µA	2V @ 250µA	-	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	133 nC @ 10 V	85 nC @ 10 V	-	67 nC @ 4.5 V	95 nC @ 10 V	-	87 nC @ 10 V
Vgs (Max)	±20V	±20V	-	±20V	±20V	-	±20V
Input Capacitance (Ciss) (Max) @ Vds	9520 pF @ 20 V	6020 pF @ 20 V	-	4600 pF @ 20 V	6800 pF @ 20 V	-	6200 pF @ 20 V
FET Feature	-	-	-	-	-	-	Schottky Diode (Body)
Power Dissipation (Max)	3W (Ta), 167W (Tc)	3W (Ta), 115W (Tc)	-	3W (Ta), 150W (Tc)	2.5W (Ta), 139W (Tc)	-	2.5W (Ta), 139W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)	-	-55°C ~ 175°C (TJ)	-55°C ~ 150°C (TJ)	-	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	-	Surface Mount	Surface Mount	-	Surface Mount
Supplier Device Package	PG-TDSON-8 FL	PG-TDSON-8 FL	-	PG-TDSON-8-6	PG-TDSON-8 FL	-	PG-TDSON-8 FL
Package / Case	8-PowerTDFN	8-PowerTDFN	-	8-PowerTDFN	8-PowerTDFN	-	8-PowerTDFN

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	40 V
Current - Continuous Drain (Id) @ 25°C:	39A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	133 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	9520 pF @ 20 V
FET Feature:	-
Power Dissipation (Max):	3W (Ta), 167W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-TDSON-8 FL
Package / Case:	8-PowerTDFN

Infineon Technologies BSC010N04LSTATMA1

Product Introduction

Overview

Key Specifications

Key Features

Applications

Q & A

Product Attributes

In Stock

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