English
BSC010N04LSTATMA1
  • Share:

Infineon Technologies BSC010N04LSTATMA1

Manufacturer No:
BSC010N04LSTATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 39A/100A TDSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSC010N04LSTATMA1 is a high-performance N-channel MOSFET produced by Infineon Technologies. This device is part of Infineon's 40V MOSFET product family, which is renowned for its industry-leading low RDS(on) and excellent switching behavior. The advanced thin wafer technology used in its manufacture results in a 15% lower RDS(on) and a 31% improvement in the figure of merit (RDS(on) x Qg) compared to similar devices. This makes it highly suitable for fast switching applications and synchronous rectification.

Key Specifications

ParameterValue
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (VDS)40 V
Continuous Drain Current (ID)100 A
On-Resistance (RDS(on))850 µΩ
Package TypeSurface Mount
RoHS ComplianceYes, halogen free
MSL RatingMSL1

Key Features

  • Optimized for synchronous rectification
  • 15% lower RDS(on) than alternative devices
  • 31% improvement of FOM over similar devices
  • RoHS compliant - halogen free
  • MSL1 rated

Applications

  • Synchronous rectification
  • Solar micro inverter
  • Isolated DC-DC converters
  • Motor control
  • Or-ing switches

Q & A

  1. What is the drain to source voltage (VDS) of the BSC010N04LSTATMA1?
    The drain to source voltage (VDS) is 40 V.
  2. What is the continuous drain current (ID) of this MOSFET?
    The continuous drain current (ID) is 100 A.
  3. What is the on-resistance (RDS(on)) of the BSC010N04LSTATMA1?
    The on-resistance (RDS(on)) is 850 µΩ.
  4. Is the BSC010N04LSTATMA1 RoHS compliant?
    Yes, the BSC010N04LSTATMA1 is RoHS compliant and halogen free.
  5. What is the MSL rating of this device?
    The MSL rating is MSL1.
  6. What are the primary applications of the BSC010N04LSTATMA1?
    The primary applications include synchronous rectification, solar micro inverters, isolated DC-DC converters, motor control, and Or-ing switches.
  7. How does the BSC010N04LSTATMA1 improve system efficiency?
    The device improves system efficiency through its low RDS(on) and enhanced figure of merit, reducing the need for paralleling and increasing power density.
  8. What technology is used in the manufacture of the BSC010N04LSTATMA1?
    The device is manufactured using advanced thin wafer technology.
  9. Is the BSC010N04LSTATMA1 suitable for fast switching applications?
    Yes, it is optimized for fast switching applications due to its excellent switching behavior.
  10. What are the benefits of using the BSC010N04LSTATMA1 in terms of system cost?
    The use of the BSC010N04LSTATMA1 can lead to system cost reduction due to its high efficiency and reduced need for paralleling.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:39A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:133 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:9520 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):3W (Ta), 167W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8 FL
Package / Case:8-PowerTDFN
0 Remaining View Similar

In Stock

$3.19
134

Please send RFQ , we will respond immediately.

Similar Products

Part Number BSC010N04LSTATMA1 BSC014N04LSTATMA1 BSC019N04LSTATMA1 BSC010N04LS6ATMA1 BSC010N04LSATMA1 BSC010N04LSCATMA1 BSC010N04LSIATMA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active Active Active Active
FET Type N-Channel N-Channel - N-Channel N-Channel - N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) - MOSFET (Metal Oxide) MOSFET (Metal Oxide) - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V - 40 V 40 V - 40 V
Current - Continuous Drain (Id) @ 25°C 39A (Ta), 100A (Tc) 33A (Ta), 100A (Tc) 28A (Ta), 161A (Tc) 40A (Ta), 100A (Tc) 38A (Ta), 100A (Tc) 282A (Tc) 37A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V - 4.5V, 10V 4.5V, 10V - 4.5V, 10V
Rds On (Max) @ Id, Vgs 1mOhm @ 50A, 10V 1.4mOhm @ 50A, 10V - 1mOhm @ 50A, 10V 1mOhm @ 50A, 10V - 1.05mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA - 2.3V @ 250µA 2V @ 250µA - 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 133 nC @ 10 V 85 nC @ 10 V - 67 nC @ 4.5 V 95 nC @ 10 V - 87 nC @ 10 V
Vgs (Max) ±20V ±20V - ±20V ±20V - ±20V
Input Capacitance (Ciss) (Max) @ Vds 9520 pF @ 20 V 6020 pF @ 20 V - 4600 pF @ 20 V 6800 pF @ 20 V - 6200 pF @ 20 V
FET Feature - - - - - - Schottky Diode (Body)
Power Dissipation (Max) 3W (Ta), 167W (Tc) 3W (Ta), 115W (Tc) - 3W (Ta), 150W (Tc) 2.5W (Ta), 139W (Tc) - 2.5W (Ta), 139W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) - -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount - Surface Mount Surface Mount - Surface Mount
Supplier Device Package PG-TDSON-8 FL PG-TDSON-8 FL - PG-TDSON-8-6 PG-TDSON-8 FL - PG-TDSON-8 FL
Package / Case 8-PowerTDFN 8-PowerTDFN - 8-PowerTDFN 8-PowerTDFN - 8-PowerTDFN

Related Product By Categories

FDB38N30U
FDB38N30U
onsemi
MOSFET N CH 300V 38A D2PAK
CSD18531Q5AT
CSD18531Q5AT
Texas Instruments
MOSFET N-CH 60V 100A 8VSON
STWA88N65M5
STWA88N65M5
STMicroelectronics
MOSFET N-CH 650V 84A TO247
NTD2955T4G
NTD2955T4G
onsemi
MOSFET P-CH 60V 12A DPAK
FQD19N10LTM
FQD19N10LTM
onsemi
MOSFET N-CH 100V 15.6A DPAK
BUK7Y2R0-40HX
BUK7Y2R0-40HX
Nexperia USA Inc.
MOSFET N-CH 40V 120A LFPAK56
STD105N10F7AG
STD105N10F7AG
STMicroelectronics
MOSFET N-CH 100V 80A DPAK
PMCXB900UE147
PMCXB900UE147
NXP USA Inc.
SMALL SIGNAL FET
STP360N4F6
STP360N4F6
STMicroelectronics
MOSFET N-CH 40V 120A TO220
STW88N65M5-4
STW88N65M5-4
STMicroelectronics
MOSFET N-CH 650V 84A TO247-4L
NTD3055L170T4
NTD3055L170T4
onsemi
MOSFET N-CH 60V 9A DPAK
BUK9222-55A,118
BUK9222-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 48A DPAK

Related Product By Brand

BAS70-05B5003
BAS70-05B5003
Infineon Technologies
SCHOTTKY DIODE
BAS40-07WH6327
BAS40-07WH6327
Infineon Technologies
SCHOTTKY DIODE
BFR93AE6327HTSA1
BFR93AE6327HTSA1
Infineon Technologies
RF TRANS NPN 12V 6GHZ SOT23-3
BC859-C
BC859-C
Infineon Technologies
TRANS PNP 30V 0.1A SOT23-3
BCX5616H6327XTSA1
BCX5616H6327XTSA1
Infineon Technologies
TRANS NPN 80V 1A SOT89
BC857CWE6433HTMA1
BC857CWE6433HTMA1
Infineon Technologies
TRANS PNP 45V 0.1A SOT323
BSC016N06NSATMA1
BSC016N06NSATMA1
Infineon Technologies
MOSFET N-CH 60V 30A/100A TDSON
BSS84P E6433
BSS84P E6433
Infineon Technologies
MOSFET P-CH 60V 170MA SOT23-3
IPB072N15N3GE8187ATMA1
IPB072N15N3GE8187ATMA1
Infineon Technologies
MOSFET N-CH 150V 100A TO263-3
IKW75N65ES5XKSA1
IKW75N65ES5XKSA1
Infineon Technologies
IGBT TRENCH 650V 80A TO247-3
BTN8962TAAUMA1
BTN8962TAAUMA1
Infineon Technologies
IC MOTOR DRIVER PAR TO263-7
TLF35584QVVS1XUMA2
TLF35584QVVS1XUMA2
Infineon Technologies
IC REG AUTO APPL 1OUT VQFN-48-31