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BSC010N04LSTATMA1
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Infineon Technologies BSC010N04LSTATMA1

Manufacturer No:
BSC010N04LSTATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 39A/100A TDSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSC010N04LSTATMA1 is a high-performance N-channel MOSFET produced by Infineon Technologies. This device is part of Infineon's 40V MOSFET product family, which is renowned for its industry-leading low RDS(on) and excellent switching behavior. The advanced thin wafer technology used in its manufacture results in a 15% lower RDS(on) and a 31% improvement in the figure of merit (RDS(on) x Qg) compared to similar devices. This makes it highly suitable for fast switching applications and synchronous rectification.

Key Specifications

ParameterValue
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (VDS)40 V
Continuous Drain Current (ID)100 A
On-Resistance (RDS(on))850 µΩ
Package TypeSurface Mount
RoHS ComplianceYes, halogen free
MSL RatingMSL1

Key Features

  • Optimized for synchronous rectification
  • 15% lower RDS(on) than alternative devices
  • 31% improvement of FOM over similar devices
  • RoHS compliant - halogen free
  • MSL1 rated

Applications

  • Synchronous rectification
  • Solar micro inverter
  • Isolated DC-DC converters
  • Motor control
  • Or-ing switches

Q & A

  1. What is the drain to source voltage (VDS) of the BSC010N04LSTATMA1?
    The drain to source voltage (VDS) is 40 V.
  2. What is the continuous drain current (ID) of this MOSFET?
    The continuous drain current (ID) is 100 A.
  3. What is the on-resistance (RDS(on)) of the BSC010N04LSTATMA1?
    The on-resistance (RDS(on)) is 850 µΩ.
  4. Is the BSC010N04LSTATMA1 RoHS compliant?
    Yes, the BSC010N04LSTATMA1 is RoHS compliant and halogen free.
  5. What is the MSL rating of this device?
    The MSL rating is MSL1.
  6. What are the primary applications of the BSC010N04LSTATMA1?
    The primary applications include synchronous rectification, solar micro inverters, isolated DC-DC converters, motor control, and Or-ing switches.
  7. How does the BSC010N04LSTATMA1 improve system efficiency?
    The device improves system efficiency through its low RDS(on) and enhanced figure of merit, reducing the need for paralleling and increasing power density.
  8. What technology is used in the manufacture of the BSC010N04LSTATMA1?
    The device is manufactured using advanced thin wafer technology.
  9. Is the BSC010N04LSTATMA1 suitable for fast switching applications?
    Yes, it is optimized for fast switching applications due to its excellent switching behavior.
  10. What are the benefits of using the BSC010N04LSTATMA1 in terms of system cost?
    The use of the BSC010N04LSTATMA1 can lead to system cost reduction due to its high efficiency and reduced need for paralleling.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:39A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:133 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:9520 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):3W (Ta), 167W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8 FL
Package / Case:8-PowerTDFN
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In Stock

$3.19
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Similar Products

Part Number BSC010N04LSTATMA1 BSC014N04LSTATMA1 BSC019N04LSTATMA1 BSC010N04LS6ATMA1 BSC010N04LSATMA1 BSC010N04LSCATMA1 BSC010N04LSIATMA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active Active Active Active
FET Type N-Channel N-Channel - N-Channel N-Channel - N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) - MOSFET (Metal Oxide) MOSFET (Metal Oxide) - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V - 40 V 40 V - 40 V
Current - Continuous Drain (Id) @ 25°C 39A (Ta), 100A (Tc) 33A (Ta), 100A (Tc) 28A (Ta), 161A (Tc) 40A (Ta), 100A (Tc) 38A (Ta), 100A (Tc) 282A (Tc) 37A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V - 4.5V, 10V 4.5V, 10V - 4.5V, 10V
Rds On (Max) @ Id, Vgs 1mOhm @ 50A, 10V 1.4mOhm @ 50A, 10V - 1mOhm @ 50A, 10V 1mOhm @ 50A, 10V - 1.05mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA - 2.3V @ 250µA 2V @ 250µA - 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 133 nC @ 10 V 85 nC @ 10 V - 67 nC @ 4.5 V 95 nC @ 10 V - 87 nC @ 10 V
Vgs (Max) ±20V ±20V - ±20V ±20V - ±20V
Input Capacitance (Ciss) (Max) @ Vds 9520 pF @ 20 V 6020 pF @ 20 V - 4600 pF @ 20 V 6800 pF @ 20 V - 6200 pF @ 20 V
FET Feature - - - - - - Schottky Diode (Body)
Power Dissipation (Max) 3W (Ta), 167W (Tc) 3W (Ta), 115W (Tc) - 3W (Ta), 150W (Tc) 2.5W (Ta), 139W (Tc) - 2.5W (Ta), 139W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) - -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount - Surface Mount Surface Mount - Surface Mount
Supplier Device Package PG-TDSON-8 FL PG-TDSON-8 FL - PG-TDSON-8-6 PG-TDSON-8 FL - PG-TDSON-8 FL
Package / Case 8-PowerTDFN 8-PowerTDFN - 8-PowerTDFN 8-PowerTDFN - 8-PowerTDFN

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