BSC010N04LS6ATMA1
  • Share:

Infineon Technologies BSC010N04LS6ATMA1

Manufacturer No:
BSC010N04LS6ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 40A/100A TDSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSC010N04LS6ATMA1 is a high-performance N-Channel power MOSFET produced by Infineon Technologies. This device is designed for high-power applications requiring low on-resistance and high current handling. It features a surface mount PG-TDSON-8-6 package, making it suitable for a variety of power management and switching applications.

Key Specifications

ParameterValue
Voltage Rating (Vds)40 V
Continuous Drain Current (Id)40 A (Ta), 100 A (Tc)
On-Resistance (Rds(on))890 µΩ
Package TypePG-TDSON-8-6, Surface Mount
Operating Temperature Range-55°C to 175°C
Power Dissipation (Pd)3 W (Ta), 150 W (Tc)

Key Features

  • Low on-resistance (Rds(on)) of 890 µΩ, reducing power losses and improving efficiency.
  • High continuous drain current of up to 100 A at case temperature (Tc).
  • Wide operating temperature range from -55°C to 175°C.
  • Compact PG-TDSON-8-6 surface mount package for space-efficient designs.
  • High power dissipation capability, making it suitable for demanding applications.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial automation and control systems.
  • Renewable energy systems, such as solar and wind power.
  • Automotive systems, including electric vehicles and hybrid vehicles.

Q & A

  1. What is the voltage rating of the BSC010N04LS6ATMA1 MOSFET?
    The voltage rating (Vds) of the BSC010N04LS6ATMA1 is 40 V.
  2. What is the maximum continuous drain current of this MOSFET?
    The maximum continuous drain current is 40 A at ambient temperature (Ta) and 100 A at case temperature (Tc).
  3. What is the on-resistance (Rds(on)) of this MOSFET?
    The on-resistance (Rds(on)) is 890 µΩ.
  4. What is the package type of the BSC010N04LS6ATMA1?
    The package type is PG-TDSON-8-6, which is a surface mount package.
  5. What is the operating temperature range of this MOSFET?
    The operating temperature range is from -55°C to 175°C.
  6. What are some typical applications for the BSC010N04LS6ATMA1?
    Typical applications include power supplies, motor control systems, industrial automation, renewable energy systems, and automotive systems.
  7. How much power can the BSC010N04LS6ATMA1 dissipate?
    The power dissipation capability is 3 W at ambient temperature (Ta) and 150 W at case temperature (Tc).
  8. Is the BSC010N04LS6ATMA1 suitable for high-power switching applications?
    Yes, it is designed for high-power switching applications due to its low on-resistance and high current handling.
  9. Where can I purchase the BSC010N04LS6ATMA1?
    You can purchase the BSC010N04LS6ATMA1 from distributors such as Digi-Key, Mouser Electronics, and Newark.
  10. What is the return policy for the BSC010N04LS6ATMA1?
    The return policy varies by distributor but typically includes a 30-day return period.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:40A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:67 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4600 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):3W (Ta), 150W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-6
Package / Case:8-PowerTDFN
0 Remaining View Similar

In Stock

$2.79
53

Please send RFQ , we will respond immediately.

Same Series
DD15S20LT2S/AA
DD15S20LT2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC47W1S10000
CBC47W1S10000
CONN D-SUB RCPT 47POS CRIMP
DD15S20Z00/AA
DD15S20Z00/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10HTS/AA
CBC9W4S10HTS/AA
CONN D-SUB RCPT 9POS CRIMP
CBC13W3S10HE2S/AA
CBC13W3S10HE2S/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S2S500X
DD26S2S500X
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20JVLS
DD15S20JVLS
CONN D-SUB HD RCPT 15P SLDR CUP
RD50S100V50
RD50S100V50
CONN D-SUB RCPT 50POS CRIMP
DD44S32S60TX/AA
DD44S32S60TX/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WT0/AA
DD26S20WT0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20WE30
DD26S20WE30
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20J00
DD26S20J00
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number BSC010N04LS6ATMA1 BSC010N04LSTATMA1 BSC010N04LSIATMA1 BSC010N04LSATMA1 BSC010N04LSCATMA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel -
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 40 V 40 V 40 V 40 V -
Current - Continuous Drain (Id) @ 25°C 40A (Ta), 100A (Tc) 39A (Ta), 100A (Tc) 37A (Ta), 100A (Tc) 38A (Ta), 100A (Tc) 282A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V -
Rds On (Max) @ Id, Vgs 1mOhm @ 50A, 10V 1mOhm @ 50A, 10V 1.05mOhm @ 50A, 10V 1mOhm @ 50A, 10V -
Vgs(th) (Max) @ Id 2.3V @ 250µA 2V @ 250µA 2V @ 250µA 2V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 67 nC @ 4.5 V 133 nC @ 10 V 87 nC @ 10 V 95 nC @ 10 V -
Vgs (Max) ±20V ±20V ±20V ±20V -
Input Capacitance (Ciss) (Max) @ Vds 4600 pF @ 20 V 9520 pF @ 20 V 6200 pF @ 20 V 6800 pF @ 20 V -
FET Feature - - Schottky Diode (Body) - -
Power Dissipation (Max) 3W (Ta), 150W (Tc) 3W (Ta), 167W (Tc) 2.5W (Ta), 139W (Tc) 2.5W (Ta), 139W (Tc) -
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount -
Supplier Device Package PG-TDSON-8-6 PG-TDSON-8 FL PG-TDSON-8 FL PG-TDSON-8 FL -
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN -

Related Product By Categories

FDD86102LZ
FDD86102LZ
onsemi
MOSFET N-CH 100V 8A/35A DPAK
STP5NK60Z
STP5NK60Z
STMicroelectronics
MOSFET N-CH 600V 5A TO220AB
FDP032N08B-F102
FDP032N08B-F102
onsemi
MOSFET N-CH 80V 120A TO220-3
FCD380N60E
FCD380N60E
onsemi
MOSFET N-CH 600V 10.2A DPAK
BUK7240-100A,118
BUK7240-100A,118
Nexperia USA Inc.
MOSFET N-CH 100V 34A DPAK
FCH040N65S3-F155
FCH040N65S3-F155
onsemi
MOSFET N-CH 650V 65A TO247-3
STF5N95K5
STF5N95K5
STMicroelectronics
MOSFET N-CH 950V 3.5A TO220FP
BUK9635-55A,118
BUK9635-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 34A D2PAK
NTMFS4C028NT1G
NTMFS4C028NT1G
onsemi
MOSFET N-CH 30V 16.4A/52A 5DFN
FQD2N60CTM
FQD2N60CTM
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 1
NTMFS4834NT1G
NTMFS4834NT1G
onsemi
MOSFET N-CH 30V 13A/130A 5DFN
NTTFS4939NTAG
NTTFS4939NTAG
onsemi
MOSFET N-CH 30V 8.9A/52A 8WDFN

Related Product By Brand

BAS4002S-02LRHE6327
BAS4002S-02LRHE6327
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BC860BWH6327
BC860BWH6327
Infineon Technologies
TRANS PNP 45V 0.1A SOT323-3
BCX56-16E6433
BCX56-16E6433
Infineon Technologies
SMALL SIGNAL BIPOLAR TRANSISTOR
BC847BWE6327BTSA1
BC847BWE6327BTSA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT-323
BC 817-40 B5003
BC 817-40 B5003
Infineon Technologies
TRANS NPN 45V 0.5A SOT23
BCP 54-16 H6778
BCP 54-16 H6778
Infineon Technologies
TRANS NPN 45V 1A SOT223-4
BSC016N06NSATMA1
BSC016N06NSATMA1
Infineon Technologies
MOSFET N-CH 60V 30A/100A TDSON
BSS123IXTMA1
BSS123IXTMA1
Infineon Technologies
100V N-CH SMALL SIGNAL MOSFET IN
IRF540NLPBF
IRF540NLPBF
Infineon Technologies
MOSFET N-CH 100V 33A TO262
ICE2PCS02GXUMA1
ICE2PCS02GXUMA1
Infineon Technologies
IC PFC CTRLR CCM 65KHZ 8DSO
BTS5215LAUMA1
BTS5215LAUMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 DSO-12
TLE7368EXUMA3
TLE7368EXUMA3
Infineon Technologies
IC REG AUTO APPL 3OUT DSO-36