BSC010N04LS6ATMA1
  • Share:

Infineon Technologies BSC010N04LS6ATMA1

Manufacturer No:
BSC010N04LS6ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 40A/100A TDSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSC010N04LS6ATMA1 is a high-performance N-Channel power MOSFET produced by Infineon Technologies. This device is designed for high-power applications requiring low on-resistance and high current handling. It features a surface mount PG-TDSON-8-6 package, making it suitable for a variety of power management and switching applications.

Key Specifications

ParameterValue
Voltage Rating (Vds)40 V
Continuous Drain Current (Id)40 A (Ta), 100 A (Tc)
On-Resistance (Rds(on))890 µΩ
Package TypePG-TDSON-8-6, Surface Mount
Operating Temperature Range-55°C to 175°C
Power Dissipation (Pd)3 W (Ta), 150 W (Tc)

Key Features

  • Low on-resistance (Rds(on)) of 890 µΩ, reducing power losses and improving efficiency.
  • High continuous drain current of up to 100 A at case temperature (Tc).
  • Wide operating temperature range from -55°C to 175°C.
  • Compact PG-TDSON-8-6 surface mount package for space-efficient designs.
  • High power dissipation capability, making it suitable for demanding applications.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial automation and control systems.
  • Renewable energy systems, such as solar and wind power.
  • Automotive systems, including electric vehicles and hybrid vehicles.

Q & A

  1. What is the voltage rating of the BSC010N04LS6ATMA1 MOSFET?
    The voltage rating (Vds) of the BSC010N04LS6ATMA1 is 40 V.
  2. What is the maximum continuous drain current of this MOSFET?
    The maximum continuous drain current is 40 A at ambient temperature (Ta) and 100 A at case temperature (Tc).
  3. What is the on-resistance (Rds(on)) of this MOSFET?
    The on-resistance (Rds(on)) is 890 µΩ.
  4. What is the package type of the BSC010N04LS6ATMA1?
    The package type is PG-TDSON-8-6, which is a surface mount package.
  5. What is the operating temperature range of this MOSFET?
    The operating temperature range is from -55°C to 175°C.
  6. What are some typical applications for the BSC010N04LS6ATMA1?
    Typical applications include power supplies, motor control systems, industrial automation, renewable energy systems, and automotive systems.
  7. How much power can the BSC010N04LS6ATMA1 dissipate?
    The power dissipation capability is 3 W at ambient temperature (Ta) and 150 W at case temperature (Tc).
  8. Is the BSC010N04LS6ATMA1 suitable for high-power switching applications?
    Yes, it is designed for high-power switching applications due to its low on-resistance and high current handling.
  9. Where can I purchase the BSC010N04LS6ATMA1?
    You can purchase the BSC010N04LS6ATMA1 from distributors such as Digi-Key, Mouser Electronics, and Newark.
  10. What is the return policy for the BSC010N04LS6ATMA1?
    The return policy varies by distributor but typically includes a 30-day return period.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:40A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:67 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4600 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):3W (Ta), 150W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-6
Package / Case:8-PowerTDFN
0 Remaining View Similar

In Stock

$2.79
53

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV50
DD15S2S5WV50
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S2S5WV5X
DD15S2S5WV5X
CONN D-SUB HD RCPT 15P SLDR CUP
CBC46W4S100T2X
CBC46W4S100T2X
CONN D-SUB RCPT 46POS CRIMP
DD15S20WV3S/AA
DD15S20WV3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2000X
DD26S2000X
CONN D-SUB HD RCPT 26P SLDR CUP
CBC46W4S1S500S
CBC46W4S1S500S
CONN D-SUB RCPT 46POS CRIMP
DD26S200E30
DD26S200E30
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0T2X/AA
DD26S2S0T2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC9W4S10HV5S/AA
CBC9W4S10HV5S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S2F00X/AA
DD26S2F00X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V3X/AA
DD26S2S50V3X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC17W2S10HT2S/AA
CBC17W2S10HT2S/AA
CONN D-SUB RCPT 17POS CRIMP

Similar Products

Part Number BSC010N04LS6ATMA1 BSC010N04LSTATMA1 BSC010N04LSIATMA1 BSC010N04LSATMA1 BSC010N04LSCATMA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel -
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 40 V 40 V 40 V 40 V -
Current - Continuous Drain (Id) @ 25°C 40A (Ta), 100A (Tc) 39A (Ta), 100A (Tc) 37A (Ta), 100A (Tc) 38A (Ta), 100A (Tc) 282A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V -
Rds On (Max) @ Id, Vgs 1mOhm @ 50A, 10V 1mOhm @ 50A, 10V 1.05mOhm @ 50A, 10V 1mOhm @ 50A, 10V -
Vgs(th) (Max) @ Id 2.3V @ 250µA 2V @ 250µA 2V @ 250µA 2V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 67 nC @ 4.5 V 133 nC @ 10 V 87 nC @ 10 V 95 nC @ 10 V -
Vgs (Max) ±20V ±20V ±20V ±20V -
Input Capacitance (Ciss) (Max) @ Vds 4600 pF @ 20 V 9520 pF @ 20 V 6200 pF @ 20 V 6800 pF @ 20 V -
FET Feature - - Schottky Diode (Body) - -
Power Dissipation (Max) 3W (Ta), 150W (Tc) 3W (Ta), 167W (Tc) 2.5W (Ta), 139W (Tc) 2.5W (Ta), 139W (Tc) -
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount -
Supplier Device Package PG-TDSON-8-6 PG-TDSON-8 FL PG-TDSON-8 FL PG-TDSON-8 FL -
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN -

Related Product By Categories

STP13NK60Z
STP13NK60Z
STMicroelectronics
MOSFET N-CH 600V 13A TO220AB
BSS84PH6327XTSA2
BSS84PH6327XTSA2
Infineon Technologies
MOSFET P-CH 60V 170MA SOT23-3
NTD2955T4G
NTD2955T4G
onsemi
MOSFET P-CH 60V 12A DPAK
FDMS86520L
FDMS86520L
onsemi
MOSFET N CH 60V 13.5A 8PQFN
STP3NK90Z
STP3NK90Z
STMicroelectronics
MOSFET N-CH 900V 3A TO220AB
PSMN0R9-25YLDX
PSMN0R9-25YLDX
Nexperia USA Inc.
MOSFET N-CH 25V 300A LFPAK56
STD60NF06T4
STD60NF06T4
STMicroelectronics
MOSFET N-CH 60V 60A DPAK
BUK7Y2R0-40HX
BUK7Y2R0-40HX
Nexperia USA Inc.
MOSFET N-CH 40V 120A LFPAK56
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
BSS84AKW
BSS84AKW
Nexperia USA Inc.
NOW NEXPERIA BSS84AKW - SMALL SI
FDN336P-NL
FDN336P-NL
onsemi
MOSFET P-CH 20V 1.3A SUPERSOT3
PH5030AL,115
PH5030AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 91A LFPAK56

Related Product By Brand

BAV199E6359
BAV199E6359
Infineon Technologies
RECTIFIER, 2 ELEMENT, 0.2A, 80V
BC858B
BC858B
Infineon Technologies
TRANS PNP 30V 0.1A SOT23-3
BCX53-16E6433
BCX53-16E6433
Infineon Technologies
SMALL SIGNAL BIPOLAR TRANSISTOR
BCX5316H6327XTSA1
BCX5316H6327XTSA1
Infineon Technologies
TRANS PNP 80V 1A SOT89
BCP5416H6327XTSA1
BCP5416H6327XTSA1
Infineon Technologies
TRANS NPN 45V 1A SOT223-4
IPG20N04S4L08AATMA1
IPG20N04S4L08AATMA1
Infineon Technologies
MOSFET 2N-CH 40V 20A 8TDSON
BSC016N06NSTATMA1
BSC016N06NSTATMA1
Infineon Technologies
MOSFET N-CH 60V 31A/100A TDSON
BSS83PH6327XTSA1
BSS83PH6327XTSA1
Infineon Technologies
MOSFET P-CH 60V 330MA SOT23-3
ICE2PCS02GXUMA1
ICE2PCS02GXUMA1
Infineon Technologies
IC PFC CTRLR CCM 65KHZ 8DSO
BTS5210LAUMA1
BTS5210LAUMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 DSO-12
BTS72002EPAXUMA1
BTS72002EPAXUMA1
Infineon Technologies
IC PWR SWTCH N-CHAN 1:1 TSDSO-14
CY7C67300-100AXIT
CY7C67300-100AXIT
Infineon Technologies
IC USB HOST/PERIPH CNTRL 100LQFP