BSC010N04LS6ATMA1
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Infineon Technologies BSC010N04LS6ATMA1

Manufacturer No:
BSC010N04LS6ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 40A/100A TDSON
Delivery:
Payment:
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Product Introduction

Overview

The BSC010N04LS6ATMA1 is a high-performance N-Channel power MOSFET produced by Infineon Technologies. This device is designed for high-power applications requiring low on-resistance and high current handling. It features a surface mount PG-TDSON-8-6 package, making it suitable for a variety of power management and switching applications.

Key Specifications

ParameterValue
Voltage Rating (Vds)40 V
Continuous Drain Current (Id)40 A (Ta), 100 A (Tc)
On-Resistance (Rds(on))890 µΩ
Package TypePG-TDSON-8-6, Surface Mount
Operating Temperature Range-55°C to 175°C
Power Dissipation (Pd)3 W (Ta), 150 W (Tc)

Key Features

  • Low on-resistance (Rds(on)) of 890 µΩ, reducing power losses and improving efficiency.
  • High continuous drain current of up to 100 A at case temperature (Tc).
  • Wide operating temperature range from -55°C to 175°C.
  • Compact PG-TDSON-8-6 surface mount package for space-efficient designs.
  • High power dissipation capability, making it suitable for demanding applications.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial automation and control systems.
  • Renewable energy systems, such as solar and wind power.
  • Automotive systems, including electric vehicles and hybrid vehicles.

Q & A

  1. What is the voltage rating of the BSC010N04LS6ATMA1 MOSFET?
    The voltage rating (Vds) of the BSC010N04LS6ATMA1 is 40 V.
  2. What is the maximum continuous drain current of this MOSFET?
    The maximum continuous drain current is 40 A at ambient temperature (Ta) and 100 A at case temperature (Tc).
  3. What is the on-resistance (Rds(on)) of this MOSFET?
    The on-resistance (Rds(on)) is 890 µΩ.
  4. What is the package type of the BSC010N04LS6ATMA1?
    The package type is PG-TDSON-8-6, which is a surface mount package.
  5. What is the operating temperature range of this MOSFET?
    The operating temperature range is from -55°C to 175°C.
  6. What are some typical applications for the BSC010N04LS6ATMA1?
    Typical applications include power supplies, motor control systems, industrial automation, renewable energy systems, and automotive systems.
  7. How much power can the BSC010N04LS6ATMA1 dissipate?
    The power dissipation capability is 3 W at ambient temperature (Ta) and 150 W at case temperature (Tc).
  8. Is the BSC010N04LS6ATMA1 suitable for high-power switching applications?
    Yes, it is designed for high-power switching applications due to its low on-resistance and high current handling.
  9. Where can I purchase the BSC010N04LS6ATMA1?
    You can purchase the BSC010N04LS6ATMA1 from distributors such as Digi-Key, Mouser Electronics, and Newark.
  10. What is the return policy for the BSC010N04LS6ATMA1?
    The return policy varies by distributor but typically includes a 30-day return period.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:40A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:67 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4600 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):3W (Ta), 150W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-6
Package / Case:8-PowerTDFN
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Similar Products

Part Number BSC010N04LS6ATMA1 BSC010N04LSTATMA1 BSC010N04LSIATMA1 BSC010N04LSATMA1 BSC010N04LSCATMA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel -
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 40 V 40 V 40 V 40 V -
Current - Continuous Drain (Id) @ 25°C 40A (Ta), 100A (Tc) 39A (Ta), 100A (Tc) 37A (Ta), 100A (Tc) 38A (Ta), 100A (Tc) 282A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V -
Rds On (Max) @ Id, Vgs 1mOhm @ 50A, 10V 1mOhm @ 50A, 10V 1.05mOhm @ 50A, 10V 1mOhm @ 50A, 10V -
Vgs(th) (Max) @ Id 2.3V @ 250µA 2V @ 250µA 2V @ 250µA 2V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 67 nC @ 4.5 V 133 nC @ 10 V 87 nC @ 10 V 95 nC @ 10 V -
Vgs (Max) ±20V ±20V ±20V ±20V -
Input Capacitance (Ciss) (Max) @ Vds 4600 pF @ 20 V 9520 pF @ 20 V 6200 pF @ 20 V 6800 pF @ 20 V -
FET Feature - - Schottky Diode (Body) - -
Power Dissipation (Max) 3W (Ta), 150W (Tc) 3W (Ta), 167W (Tc) 2.5W (Ta), 139W (Tc) 2.5W (Ta), 139W (Tc) -
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount -
Supplier Device Package PG-TDSON-8-6 PG-TDSON-8 FL PG-TDSON-8 FL PG-TDSON-8 FL -
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN -

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