BSC016N06NSATMA1
  • Share:

Infineon Technologies BSC016N06NSATMA1

Manufacturer No:
BSC016N06NSATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 30A/100A TDSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSC016N06NSATMA1 is a high-performance OptiMOS™ Power-MOSFET from Infineon Technologies, designed for various industrial and power management applications. This N-channel MOSFET is optimized for synchronous rectification in switched mode power supplies (SMPS) and is well-suited for applications such as motor control, solar micro inverters, and fast switching DC-DC converters. With its 60V voltage rating, low on-resistance of 1.6 mΩ, and high current handling capability, it offers superior thermal performance and high system efficiency.

Key Specifications

Parameter Value Unit Note/Test Condition
Voltage Rating (V_DS) 60 V
Continuous Drain Current (I_D) 80 A V_GS = 10 V, T_J = 25°C
Pulsed Drain Current (I_DM) 234 A V_GS = 10 V, T_J = 25°C
On-Resistance (R_DS(on)) 1.6 V_GS = 10 V, I_D = 80 A
Gate Charge (Q_G) 71 nC V_DS = 0 V to 10 V
Thermal Resistance, Junction-Case (R_thJC) 0.5 K/W
Package Type PG-TDSON-8
RoHS Compliance Yes
Halogen Free Yes

Key Features

  • Optimized for synchronous rectification in SMPS, offering 40% lower R_DS(on) and 40% improvement of FOM over similar devices.
  • High-speed performance with low on-resistance of 1.6 mΩ and low gate charge of 71 nC.
  • Surface mount package (PG-TDSON-8) for easy integration and compact design.
  • Ruggedness and reliability with 100% avalanche testing and superior thermal resistance.
  • RoHS compliant, halogen-free, and MSL1 rated, ensuring environmental friendliness and reliability.
  • High system efficiency, less paralleling required, increased power density, and system cost reduction.
  • Very low voltage overshoot, making it suitable for applications like solar micro inverters and isolated DC-DC converters.

Applications

  • Synchronous rectification in switched mode power supplies (SMPS).
  • Solar micro inverters and fast switching DC-DC converters.
  • Motor control for 12-48V systems.
  • Isolated DC-DC converters.
  • Or-ing switches.
  • Battery charging systems and power supplies.
  • Automated manufacturing processes and smart energy management.

Q & A

  1. What is the voltage rating of the BSC016N06NSATMA1 MOSFET?

    The voltage rating of the BSC016N06NSATMA1 MOSFET is 60V.

  2. What is the continuous drain current of the BSC016N06NSATMA1?

    The continuous drain current of the BSC016N06NSATMA1 is 80A.

  3. What is the on-resistance (R_DS(on)) of the BSC016N06NSATMA1?

    The on-resistance (R_DS(on)) of the BSC016N06NSATMA1 is 1.6 mΩ.

  4. Is the BSC016N06NSATMA1 RoHS compliant and halogen-free?

    Yes, the BSC016N06NSATMA1 is RoHS compliant and halogen-free.

  5. What are the typical applications of the BSC016N06NSATMA1?

    The BSC016N06NSATMA1 is typically used in synchronous rectification, solar micro inverters, isolated DC-DC converters, motor control, and Or-ing switches.

  6. What is the package type of the BSC016N06NSATMA1?

    The BSC016N06NSATMA1 comes in a PG-TDSON-8 package type.

  7. Does the BSC016N06NSATMA1 have high thermal performance?

    Yes, the BSC016N06NSATMA1 has superior thermal resistance with a thermal resistance, junction-case (R_thJC) of 0.5 K/W.

  8. Is the BSC016N06NSATMA1 suitable for high-frequency applications?

    Yes, the BSC016N06NSATMA1 is suitable for high-frequency applications due to its low on-resistance and gate charge.

  9. What are the benefits of using the BSC016N06NSATMA1 in power management systems?

    The benefits include highest system efficiency, less paralleling required, increased power density, and system cost reduction.

  10. Is the BSC016N06NSATMA1 MSL1 rated?

    Yes, the BSC016N06NSATMA1 is MSL1 rated, ensuring its reliability in various environmental conditions.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:30A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:1.6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2.8V @ 95µA
Gate Charge (Qg) (Max) @ Vgs:71 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5200 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 139W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8 FL
Package / Case:8-PowerTDFN
0 Remaining View Similar

In Stock

$2.98
213

Please send RFQ , we will respond immediately.

Similar Products

Part Number BSC016N06NSATMA1 BSC016N06NSTATMA1 BSC019N06NSATMA1 BSC012N06NSATMA1 BSC014N06NSATMA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 30A (Ta), 100A (Tc) 31A (Ta), 100A (Tc) 100A (Ta) 36A (Ta), 306A (Tc) 30A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V 6V, 10V 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 1.6mOhm @ 50A, 10V 1.6mOhm @ 50A, 10V 1.95mOhm @ 50A, 10V 1.2mOhm @ 50A, 10V 1.45mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.8V @ 95µA 3.3V @ 95µA 3.3V @ 74µA 3.3V @ 147µA 2.8V @ 120µA
Gate Charge (Qg) (Max) @ Vgs 71 nC @ 10 V 95 nC @ 10 V 77 nC @ 10 V 143 nC @ 10 V 89 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5200 pF @ 30 V 6500 pF @ 30 V 5250 pF @ 30 V 11000 pF @ 30 V 6500 pF @ 30 V
FET Feature - - - - -
Power Dissipation (Max) 2.5W (Ta), 139W (Tc) 3W (Ta), 167W (Tc) 136W (Ta) 214W (Tc) 2.5W (Ta), 156W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-TDSON-8 FL PG-TDSON-8 FL PG-TDSON-8 FL PG-TSON-8-3 PG-TDSON-8-17
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

Related Product By Categories

IRF4905PBF
IRF4905PBF
Infineon Technologies
MOSFET P-CH 55V 74A TO220AB
STP80NF70
STP80NF70
STMicroelectronics
MOSFET N-CH 68V 98A TO220AB
BSS84-TP
BSS84-TP
Micro Commercial Co
MOSFET P-CH 50V 130MA SOT23
STD36P4LLF6
STD36P4LLF6
STMicroelectronics
MOSFET P-CH 40V 36A DPAK
IRF3710PBF
IRF3710PBF
Infineon Technologies
MOSFET N-CH 100V 57A TO220AB
STD5N80K5
STD5N80K5
STMicroelectronics
MOSFET N-CH 800V 4A DPAK
STF28N65M2
STF28N65M2
STMicroelectronics
MOSFET N-CH 650V 20A TO220FP
2N7002H-13
2N7002H-13
Diodes Incorporated
MOSFET N-CH 60V 170MA SOT23
2N7002AQ-13
2N7002AQ-13
Diodes Incorporated
MOSFET N-CH 60V 180MA SOT23
STS12NF30L
STS12NF30L
STMicroelectronics
MOSFET N-CH 30V 12A 8SO
STD7N52DK3
STD7N52DK3
STMicroelectronics
MOSFET N-CH 525V 6A DPAK
FDB075N15A_SN00284
FDB075N15A_SN00284
onsemi
MOSFET N-CH 150V 130A D2PAK

Related Product By Brand

BAL74E6327HTSA1
BAL74E6327HTSA1
Infineon Technologies
DIODE GEN PURP 50V 250MA SOT23-3
BC847PNE6433BTMA1
BC847PNE6433BTMA1
Infineon Technologies
TRANS NPN/PNP 45V 0.1A SOT363-6
BC848BW
BC848BW
Infineon Technologies
TRANS NPN 30V 0.1A SOT323
BC858BW
BC858BW
Infineon Technologies
TRANS PNP 30V 0.1A SOT323
BC 807-25 B5003
BC 807-25 B5003
Infineon Technologies
TRANS PNP 45V 0.5A SOT23
BC 856B E6327
BC 856B E6327
Infineon Technologies
TRANS PNP 65V 0.1A SOT23
IPG20N04S4L08AATMA1
IPG20N04S4L08AATMA1
Infineon Technologies
MOSFET 2N-CH 40V 20A 8TDSON
IRFP4468PBF
IRFP4468PBF
Infineon Technologies
MOSFET N-CH 100V 195A TO247AC
BSC0702LSATMA1
BSC0702LSATMA1
Infineon Technologies
MOSFET N-CH 60V 100A SUPERSO8
BSS84PW
BSS84PW
Infineon Technologies
MOSFET P-CH 60V 150MA SOT323-3
IKW75N60TA
IKW75N60TA
Infineon Technologies
IKW75N60 - AUTOMOTIVE IGBT DISCR
S34ML01G100TFI000
S34ML01G100TFI000
Infineon Technologies
IC FLASH 1GBIT PARALLEL 48TSOP I