IRF1404PBF
  • Share:

Infineon Technologies IRF1404PBF

Manufacturer No:
IRF1404PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Description:
MOSFET N-CH 40V 202A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRF1404PBF is a high-performance N-Channel Power MOSFET from Infineon Technologies, part of the Seventh Generation HEXFET® family. This device is designed using advanced processing techniques to achieve extremely low on-resistance and high current handling capabilities. It is packaged in the industry-standard TO-220AB package, making it suitable for a wide range of applications requiring high power and efficiency.

Key Specifications

Parameter Min. Typ. Max. Units Conditions
VDSS (Drain-to-Source Breakdown Voltage) - - 40 V VGS = 0V, ID = 250μA
VGS (Gate-to-Source Voltage) - - ±20 V -
ID (Continuous Drain Current at TC = 25°C) - - 202 A VGS = 10V
ID (Continuous Drain Current at TC = 100°C) - - 143 A VGS = 10V
IDM (Pulsed Drain Current) - - 808 A -
PD (Power Dissipation at TC = 25°C) - - 333 W -
RDS(on) (Drain-to-Source On-State Resistance) - - 0.004 Ω VGS = 10V
TJ (Operating Junction Temperature) -55 - 175 °C -
TSTG (Storage Temperature Range) -55 - 175 °C -

Key Features

  • Advanced Process Technology: Utilizes seventh-generation HEXFET technology for extremely low on-resistance and high efficiency.
  • Ultra Low On-Resistance: RDS(on) of 0.004 Ω at VGS = 10V.
  • Dynamic dv/dt Rating: Ensures robust performance under high dv/dt conditions.
  • 175°C Operating Temperature: Suitable for high-temperature applications.
  • Fast Switching: Optimized for fast switching times, making it ideal for high-frequency applications.
  • Fully Avalanche Rated: Capable of withstanding avalanche conditions, enhancing reliability.
  • Lead-Free: Compliant with lead-free regulations, making it environmentally friendly.
  • High Current Carrying Capability: Continuous drain current of up to 202 A at TC = 25°C.
  • Industry Standard Package: TO-220AB package for easy integration and compatibility.

Applications

  • Power Supplies: Suitable for high-power DC-DC converters and power supplies.
  • Motor Control: Used in motor drive applications due to its high current and fast switching capabilities.
  • Automotive Systems: Ideal for automotive applications requiring high reliability and performance.
  • Industrial Control: Used in various industrial control systems where high power and efficiency are necessary.
  • Renewable Energy Systems: Suitable for use in solar and wind power systems.

Q & A

  1. What is the maximum drain-to-source breakdown voltage of the IRF1404PBF?

    The maximum drain-to-source breakdown voltage (VDSS) is 40 V.

  2. What is the maximum continuous drain current at 25°C?

    The maximum continuous drain current (ID) at TC = 25°C is 202 A.

  3. What is the on-state resistance (RDS(on)) of the IRF1404PBF?

    The on-state resistance (RDS(on)) is 0.004 Ω at VGS = 10V.

  4. What is the maximum operating junction temperature of the IRF1404PBF?

    The maximum operating junction temperature (TJ) is 175°C.

  5. Is the IRF1404PBF fully avalanche rated?

    Yes, the IRF1404PBF is fully avalanche rated, enhancing its reliability in high-stress applications.

  6. What package type is the IRF1404PBF available in?

    The IRF1404PBF is available in the TO-220AB package.

  7. What are some typical applications of the IRF1404PBF?

    Typical applications include power supplies, motor control, automotive systems, industrial control, and renewable energy systems.

  8. What is the maximum gate-to-source voltage (VGS) for the IRF1404PBF?

    The maximum gate-to-source voltage (VGS) is ±20 V.

  9. Is the IRF1404PBF lead-free?

    Yes, the IRF1404PBF is lead-free, making it compliant with environmental regulations.

  10. What is the maximum power dissipation (PD) at TC = 25°C?

    The maximum power dissipation (PD) at TC = 25°C is 333 W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:202A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4mOhm @ 121A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:196 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5669 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):333W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$2.30
187

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRF1404PBF IRF1405PBF IRF1407PBF IRF1404ZPBF IRF1404SPBF IRF1104PBF IRF1404LPBF
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Not For New Designs Active Discontinued at Digi-Key Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 55 V 75 V 40 V 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 202A (Tc) 169A (Tc) 130A (Tc) 180A (Tc) 162A (Tc) 100A (Tc) 162A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 4mOhm @ 121A, 10V 5.3mOhm @ 101A, 10V 7.8mOhm @ 78A, 10V 3.7mOhm @ 75A, 10V 4mOhm @ 95A, 10V 9mOhm @ 60A, 10V 4mOhm @ 95A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 196 nC @ 10 V 260 nC @ 10 V 250 nC @ 10 V 150 nC @ 10 V 200 nC @ 10 V 93 nC @ 10 V 200 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5669 pF @ 25 V 5480 pF @ 25 V 5600 pF @ 25 V 4340 pF @ 25 V 7360 pF @ 25 V 2900 pF @ 25 V 7360 pF @ 25 V
FET Feature - - - - - - -
Power Dissipation (Max) 333W (Tc) 330W (Tc) 330W (Tc) 200W (Tc) 3.8W (Ta), 200W (Tc) 170W (Tc) 3.8W (Ta), 200W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Surface Mount Through Hole Through Hole
Supplier Device Package TO-220AB TO-220AB TO-220AB TO-220AB D2PAK TO-220AB TO-262
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 TO-262-3 Long Leads, I²Pak, TO-262AA

Related Product By Categories

AO3407A
AO3407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 4.3A SOT23-3L
FDMS86255ET150
FDMS86255ET150
onsemi
MOSFET N-CH 150V 10A/63A POWER56
BSC093N15NS5ATMA1
BSC093N15NS5ATMA1
Infineon Technologies
MOSFET N-CH 150V 87A TDSON
STD3N62K3
STD3N62K3
STMicroelectronics
MOSFET N-CH 620V 2.7A DPAK
NVF2955T1G
NVF2955T1G
onsemi
MOSFET P-CH 60V 2.6A SOT223
BUK7613-60E,118
BUK7613-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 58A D2PAK
BSS138K-7
BSS138K-7
Diodes Incorporated
MOSFET N-CH 50V SOT23 T&R 3K
FDMS86163P-23507X
FDMS86163P-23507X
onsemi
FET -100V 22.0 MOHM PQFN56
STW48NM60N
STW48NM60N
STMicroelectronics
MOSFET N-CH 600V 44A TO247
2N7002TC
2N7002TC
Diodes Incorporated
MOSFET N-CH 60V 115MA SOT23-3
AO3401AL_DELTA
AO3401AL_DELTA
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V SOT23
FDMS86101E
FDMS86101E
onsemi
MOSFET N-CH 100V 12.4A/60A 8PQFN

Related Product By Brand

BAS4007WE6327BTSA1
BAS4007WE6327BTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT343
BAS 40-06 B5003
BAS 40-06 B5003
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT23
BAS16UE6727HTSA1
BAS16UE6727HTSA1
Infineon Technologies
DIODE GP 80V 100MA SC74
BAS4002LE6327
BAS4002LE6327
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
MMBT2907ALT1HTSA1
MMBT2907ALT1HTSA1
Infineon Technologies
TRANS PNP 60V 0.6A SOT23
BC 860B E6327
BC 860B E6327
Infineon Technologies
TRANS PNP 45V 0.1A SOT23-3
BC850CE6327HTSA1
BC850CE6327HTSA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT-23
BC80740B5003XT
BC80740B5003XT
Infineon Technologies
TRANS PNP 45V 0.5A SOT23
BCP 54-16 H6778
BCP 54-16 H6778
Infineon Technologies
TRANS NPN 45V 1A SOT223-4
FF600R12ME4PBOSA1
FF600R12ME4PBOSA1
Infineon Technologies
IGBT MODULE VCES 600V 600A
ICE2PCS02GE8191XUMA1
ICE2PCS02GE8191XUMA1
Infineon Technologies
IC PFC CTRLR CCM 65KHZ 8DSO
BSP742RINT
BSP742RINT
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 DSO-8