FDMC8010ET30
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onsemi FDMC8010ET30

Manufacturer No:
FDMC8010ET30
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 30A/174A POWER33
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The FDMC8010ET30 is an N-Channel MOSFET produced by ON Semiconductor, utilizing their advanced POWERTRENCH process. This device is designed to minimize on-state resistance, making it ideal for applications requiring ultra-low rDS(on) in compact spaces. It is particularly suited for high-performance applications such as Voltage Regulator Modules (VRMs), Point of Load (POL), and Oring functions.

Key Specifications

Parameter Test Condition Min Typ Max Units
VDS (Drain to Source Voltage) - - - 30 V
VGS (Gate to Source Voltage) - - - ±20 V
ID (Drain Current - Continuous at TC = 25°C) - - - 174 A
ID (Drain Current - Continuous at TC = 100°C) - - - 123 A
rDS(on) (Static Drain to Source On Resistance at VGS = 10 V, ID = 30 A) - 0.9 1.3 2
rDS(on) (Static Drain to Source On Resistance at VGS = 4.5 V, ID = 25 A) - 1.3 1.8 -
TJ (Operating and Storage Junction Temperature Range) - -55 - 150 °C
RθJC (Thermal Resistance, Junction to Case) - - - 1.3 °C/W
RθJA (Thermal Resistance, Junction to Ambient) - - - 53 °C/W

Key Features

  • Extended TJ Rating to 175°C
  • Ultra-low on-state resistance (rDS(on)) of 1.3 mΩ at VGS = 10 V, ID = 30 A and 1.8 mΩ at VGS = 4.5 V, ID = 25 A
  • High Performance Technology for Extremely Low rDS(on)
  • Pb-Free and RoHS Compliant

Applications

  • DC-DC Buck Converters
  • Point of Load (POL)
  • High Efficiency Load Switch and Low Side Switching
  • Oring FET

Q & A

  1. What is the maximum drain to source voltage (VDS) for the FDMC8010ET30?

    The maximum drain to source voltage (VDS) is 30 V.

  2. What is the maximum continuous drain current (ID) at TC = 25°C?

    The maximum continuous drain current (ID) at TC = 25°C is 174 A.

  3. What is the typical on-state resistance (rDS(on)) at VGS = 10 V and ID = 30 A?

    The typical on-state resistance (rDS(on)) at VGS = 10 V and ID = 30 A is 1.3 mΩ.

  4. What is the thermal resistance from junction to case (RθJC)?

    The thermal resistance from junction to case (RθJC) is 1.3 °C/W.

  5. Is the FDMC8010ET30 Pb-Free and RoHS Compliant?
  6. What are some common applications for the FDMC8010ET30?
  7. What is the operating and storage junction temperature range for the FDMC8010ET30?

    The operating and storage junction temperature range is -55°C to 150°C.

  8. What is the package type for the FDMC8010ET30?

    The package type is 8-PowerWDFN.

  9. What is the gate to source threshold voltage (VGS(th)) for the FDMC8010ET30?

    The gate to source threshold voltage (VGS(th)) is between 1.2 V and 2.5 V.

  10. What is the maximum power dissipation (PD) at TC = 25°C?

    The maximum power dissipation (PD) at TC = 25°C is 65 W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:30A (Ta), 174A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.3mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:94 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5860 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):2.8W (Ta), 65W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Power33
Package / Case:8-PowerWDFN
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