Overview
The FDMC8010ET30 is an N-Channel MOSFET produced by ON Semiconductor, utilizing their advanced POWERTRENCH process. This device is designed to minimize on-state resistance, making it ideal for applications requiring ultra-low rDS(on) in compact spaces. It is particularly suited for high-performance applications such as Voltage Regulator Modules (VRMs), Point of Load (POL), and Oring functions.
Key Specifications
| Parameter | Test Condition | Min | Typ | Max | Units |
|---|---|---|---|---|---|
| VDS (Drain to Source Voltage) | - | - | - | 30 | V |
| VGS (Gate to Source Voltage) | - | - | - | ±20 | V |
| ID (Drain Current - Continuous at TC = 25°C) | - | - | - | 174 | A |
| ID (Drain Current - Continuous at TC = 100°C) | - | - | - | 123 | A |
| rDS(on) (Static Drain to Source On Resistance at VGS = 10 V, ID = 30 A) | - | 0.9 | 1.3 | 2 | mΩ |
| rDS(on) (Static Drain to Source On Resistance at VGS = 4.5 V, ID = 25 A) | - | 1.3 | 1.8 | - | mΩ |
| TJ (Operating and Storage Junction Temperature Range) | - | -55 | - | 150 | °C |
| RθJC (Thermal Resistance, Junction to Case) | - | - | - | 1.3 | °C/W |
| RθJA (Thermal Resistance, Junction to Ambient) | - | - | - | 53 | °C/W |
Key Features
- Extended TJ Rating to 175°C
- Ultra-low on-state resistance (rDS(on)) of 1.3 mΩ at VGS = 10 V, ID = 30 A and 1.8 mΩ at VGS = 4.5 V, ID = 25 A
- High Performance Technology for Extremely Low rDS(on)
- Pb-Free and RoHS Compliant
Applications
- DC-DC Buck Converters
- Point of Load (POL)
- High Efficiency Load Switch and Low Side Switching
- Oring FET
Q & A
- What is the maximum drain to source voltage (VDS) for the FDMC8010ET30?
The maximum drain to source voltage (VDS) is 30 V.
- What is the maximum continuous drain current (ID) at TC = 25°C?
The maximum continuous drain current (ID) at TC = 25°C is 174 A.
- What is the typical on-state resistance (rDS(on)) at VGS = 10 V and ID = 30 A?
The typical on-state resistance (rDS(on)) at VGS = 10 V and ID = 30 A is 1.3 mΩ.
- What is the thermal resistance from junction to case (RθJC)?
The thermal resistance from junction to case (RθJC) is 1.3 °C/W.
- Is the FDMC8010ET30 Pb-Free and RoHS Compliant?
- What are some common applications for the FDMC8010ET30?
- What is the operating and storage junction temperature range for the FDMC8010ET30?
The operating and storage junction temperature range is -55°C to 150°C.
- What is the package type for the FDMC8010ET30?
The package type is 8-PowerWDFN.
- What is the gate to source threshold voltage (VGS(th)) for the FDMC8010ET30?
The gate to source threshold voltage (VGS(th)) is between 1.2 V and 2.5 V.
- What is the maximum power dissipation (PD) at TC = 25°C?
The maximum power dissipation (PD) at TC = 25°C is 65 W.
