BCX5516H6433XTMA1
  • Share:

Infineon Technologies BCX5516H6433XTMA1

Manufacturer No:
BCX5516H6433XTMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS NPN 60V 1A SOT89
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCX5516H6433XTMA1 is a surface-mount NPN bipolar junction transistor (BJT) manufactured by Infineon Technologies. This transistor is designed for amplifier applications and is known for its high performance and reliability. It is packaged in a SOT-89 format, making it suitable for a variety of electronic circuits where space efficiency is crucial.

Key Specifications

ParameterValue
Product TypeBipolar (BJT) Transistor
PolarityNPN
Collector-Emitter Voltage (Vce)60 V
Collector Current (Ic)1 A
Transition Frequency (ft)100 MHz
Power Dissipation (Pd)2 W
Package TypeSOT-89
Factory Pack Quantity4000

Key Features

  • High current handling capability of up to 1 A.
  • Collector-Emitter voltage of 60 V, making it suitable for various power applications.
  • Transition frequency of 100 MHz, optimized for high-frequency operations.
  • Compact SOT-89 packaging for space-efficient designs.
  • High power dissipation of 2 W, ensuring reliable performance under load.
  • Designed for amplifier applications, providing high gain and stability.

Applications

The BCX5516H6433XTMA1 transistor is versatile and can be used in a wide range of applications, including:

  • Automotive systems: For power amplification and control in vehicle electronics.
  • Industrial electronics: In control circuits, power supplies, and other high-current applications.
  • Telecommunications: For signal amplification and switching in communication devices.
  • General-purpose amplifiers: In audio, video, and other signal processing circuits.

Q & A

  1. What is the BCX5516H6433XTMA1 transistor's polarity?
    The BCX5516H6433XTMA1 is an NPN bipolar junction transistor.
  2. What is the maximum collector current of the BCX5516H6433XTMA1?
    The maximum collector current is 1 A.
  3. What is the transition frequency of the BCX5516H6433XTMA1?
    The transition frequency is 100 MHz.
  4. What is the package type of the BCX5516H6433XTMA1?
    The package type is SOT-89.
  5. What is the power dissipation of the BCX5516H6433XTMA1?
    The power dissipation is 2 W.
  6. In what types of applications is the BCX5516H6433XTMA1 commonly used?
    It is commonly used in automotive, industrial, telecommunications, and general-purpose amplifier applications.
  7. Where can I find detailed specifications for the BCX5516H6433XTMA1?
    Detailed specifications can be found in the product datasheet available from the manufacturer's website or authorized distributors like Digi-Key and Mouser.
  8. What is the factory pack quantity for the BCX5516H6433XTMA1?
    The factory pack quantity is 4000 units.
  9. Is the BCX5516H6433XTMA1 suitable for high-frequency applications?
    Yes, it is optimized for high-frequency operations with a transition frequency of 100 MHz.
  10. What is the collector-emitter voltage rating of the BCX5516H6433XTMA1?
    The collector-emitter voltage rating is 60 V.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 2V
Power - Max:2 W
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-243AA
Supplier Device Package:PG-SOT89
0 Remaining View Similar

In Stock

$0.10
8,245

Please send RFQ , we will respond immediately.

Same Series
BCX5416H6327XTSA1
BCX5416H6327XTSA1
TRANS NPN 45V 1A SOT89
BCX5516H6327XTSA1
BCX5516H6327XTSA1
TRANS NPN 60V 1A SOT89
BCX5516H6433XTMA1
BCX5516H6433XTMA1
TRANS NPN 60V 1A SOT89
BCX5616H6327XTSA1
BCX5616H6327XTSA1
TRANS NPN 80V 1A SOT89
BCX5616H6433XTMA1
BCX5616H6433XTMA1
TRANS NPN 80V 1A SOT89
BCX5410E6327
BCX5410E6327
TRANS NPN 45V 1A SOT89
BCX5516E6433HTMA1
BCX5516E6433HTMA1
TRANS NPN 60V 1A SOT89
BCX5616E6433HTMA1
BCX5616E6433HTMA1
TRANS NPN 80V 1A SOT89
BCX 55-16 E6327
BCX 55-16 E6327
TRANS NPN 60V 1A SOT-89
BCX56E6327HTSA1
BCX56E6327HTSA1
TRANS NPN 80V 1A SOT89
BCX5616E6327HTSA1
BCX5616E6327HTSA1
TRANS NPN 80V 1A SOT89
BCX56H6359XTMA1
BCX56H6359XTMA1
TRANS NPN 80V 1A SOT89

Similar Products

Part Number BCX5516H6433XTMA1 BCX5616H6433XTMA1 BCX5116H6433XTMA1 BCX5216H6433XTMA1 BCX5316H6433XTMA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Not For New Designs Not For New Designs Not For New Designs Not For New Designs Not For New Designs
Transistor Type NPN NPN PNP PNP PNP
Current - Collector (Ic) (Max) 1 A 1 A 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 60 V 80 V 45 V 60 V 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V
Power - Max 2 W 2 W 2 W 2 W 2 W
Frequency - Transition 100MHz 100MHz 125MHz 125MHz 125MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-243AA TO-243AA TO-243AA TO-243AA TO-243AA
Supplier Device Package PG-SOT89 PG-SOT89 PG-SOT89 PG-SOT89 PG-SOT89

Related Product By Categories

BC858B,235
BC858B,235
Nexperia USA Inc.
TRANS PNP 30V 0.1A TO236AB
2SC5658M3T5G
2SC5658M3T5G
onsemi
TRANS NPN 50V 0.1A SOT723
BC848B-TP
BC848B-TP
Micro Commercial Co
TRANS NPN 30V 0.1A SOT23
BFS20W,115
BFS20W,115
Nexperia USA Inc.
TRANS NPN 20V 0.025A SOT323
BC807-40W-AU_R1_000A1
BC807-40W-AU_R1_000A1
Panjit International Inc.
TRANS PNP 45V 0.5A SOT323
BC846A-7-F
BC846A-7-F
Diodes Incorporated
TRANS NPN 65V 0.1A SOT23-3
NSV1C301ET4G-VF01
NSV1C301ET4G-VF01
onsemi
TRANS NPN 100V 3A DPAK
BC847CW_R1_00001
BC847CW_R1_00001
Panjit International Inc.
TRANS NPN 45V 0.1A SOT323
BC847CWH6778XTSA1
BC847CWH6778XTSA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT323
BCP53TX
BCP53TX
Nexperia USA Inc.
TRANS PNP 80V 1A SOT223
BC817-16-7
BC817-16-7
Diodes Incorporated
TRANS NPN 45V 0.8A SOT23-3
BD1366STU
BD1366STU
onsemi
TRANS PNP 45V 1.5A TO126-3

Related Product By Brand

BAS4006WH6327XTSA1
BAS4006WH6327XTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT323
BAS16WE6327HTSA1
BAS16WE6327HTSA1
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT323
BC858BE6433HTMA1
BC858BE6433HTMA1
Infineon Technologies
TRANS PNP 30V 0.1A SOT23
BCX5616E6433HTMA1
BCX5616E6433HTMA1
Infineon Technologies
TRANS NPN 80V 1A SOT89
BC847BWE6433HTMA1
BC847BWE6433HTMA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT323
BCX5316E6327HTSA1
BCX5316E6327HTSA1
Infineon Technologies
TRANS PNP 80V 1A SOT89
IRF4905SPBF
IRF4905SPBF
Infineon Technologies
MOSFET P-CH 55V 42A D2PAK
BSS138NL6433HTMA1
BSS138NL6433HTMA1
Infineon Technologies
MOSFET N-CH 60V 230MA SOT23-3
BSS138W L6327
BSS138W L6327
Infineon Technologies
MOSFET N-CH 60V 280MA SOT323-3
FF600R12ME4CB11BOSA1
FF600R12ME4CB11BOSA1
Infineon Technologies
IGBT MOD 1200V 1060A 4050W
IKW50N60T
IKW50N60T
Infineon Technologies
IKW50N60 - DISCRETE IGBT WITH AN
BSP452 E6327
BSP452 E6327
Infineon Technologies
IC PWR SWTCH N-CHAN 1:1 SOT223-4